25MJ Search Results

Contextual Info: IDT79RV3081-25MJ 1/3 IL08 C-MOS RISC CONTROLLER WITH FLOATING POINT ACCELERATOR VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) VDD (+5 V) GND GND VDD (+5 V) GND VDD (+5 V) NC GND VDD (+5 V) GND VDD (+5 V) GND VDD (+5 V) 74 73 72 71 70 69 68 67 66 65 64 63

Contextual Info: * IDT79R3081-25MJ 1/3 IL00 C-MOS RISC CPU 1 GND VDD(+5V) 80 75 GND 5 VDD(+5V) 10 GND VDD(+5V) —TOP VIEW— GND VDD(+5V) 15 70 VDD(+5V) GND 20 GND VDD(+5V) 65 25 60 GND VDD(+5V) VDD(+5V) 35 PIN I/O No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

NTE2954

Contextual Info: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified

FUR460

Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
Contextual Info: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔

transistor TIP 42

Abstract: TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor
Contextual Info: TYPES TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POW ER TR A N SISTO R S D ESIG NED IFOR C O M P L E M E N T A R Y USE W ITH T IP 1 10, T IP 1 11, T IP 112 • High SOA Capability, 40 V and 1.25 A 50 W at 25°C Case Temperature Min hpE of 500 at 4 V , 2 A

g7n60

Abstract: g7n60a
Contextual Info: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

G60T120

Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications

2SD1325

Abstract: 25mJ
Contextual Info: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

SGW25N120

Abstract: IGBT 1200V 60A
Contextual Info: Preliminary SGW25N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution

sgw25n120

Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

Contextual Info: Target IGW60T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :

k25n120

Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for: - Motor controls - Inverter G - SMPS  NPT-Technology offers:

Contextual Info: Power Transistors 2SD1325 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 ● ● Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

g25n120

Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

12v 30a smps

Abstract: 250w smps SGW25N120 250w smps inverter circuits high current igbt
Contextual Info: SGW25N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

SKW25N120

Abstract: IGBT 200A 1200V
Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

7N60a4

Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
Contextual Info: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

PowerDI-123

Abstract: SBR3U30P1 PowerDI123 RSX101M-30 PMDU SBR2U30P1 336V RB160M 16kv 5ma diode Schottky Diode 30V 1A SOD diodes toshiba
Contextual Info: New Product Announcement January 17, 2007 Announcing Industry-First 3 Ampere High Performance SBR Technology in PowerDITM123 Package SBR® Super Barrier Rectifier Package Cross Section Diodes, Inc. patented interlocking clip construction and a flat lead frame heat-sink solder pad result in higher power

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have

T1P116

Abstract: TIP112 TIP115 TIP117
Contextual Info: PANASONIC INDL/ELEK -CIO ^•=132052 D01D441 t, 1SE D Darlington Silicon PNP Power Transistors T-33-3Í TO-220 Package Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current

G60T120

Abstract: PG-TO-247-3-21
Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications

G60T120

Contextual Info: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications

K25N120

Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers: