25JUN14 Search Results
25JUN14 Datasheets Context Search
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Contextual Info: F-214 SUPPLEMENT Rev 25JUN14 FSH–120–04–F–RA–SL FSH–110–04–L–DH–SL SFMH–130–02–L–D–LC SFMH–105–02–L–D–LC FSH–120–04–F–DH SFMH–120–02–L–D (1,27 mm) .050" FSH, SFMH SERIES HIGH RELIABLE HORIZONTAL SMT |
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f-21425jun14 | |
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Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 ± 0.15 12 ± 0.35 4.3 ± 0.3 DIMENSIONS in millimeters 56.8 ± 0.3 52.7 ± 0.5 51 ± 0.15 20.4 Ø 16.6 4.4 ±0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 ± 0.5 42.5 ± 0.15 53 ± 0.15 |
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25-jun-14 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
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Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES |
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vs-etf075y60u2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal |
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vs-etf150y65ue789962002/95/ec2011/65/eu+2 | |
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Contextual Info: V15P6-M3, V15P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available |
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v15p6-m3v15p6hm3j-std-020aec-q101+4 | |
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Contextual Info: TEMD5510FX01 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity |
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temd5510fx01aec-q101j-std-0202002/95/ec+3 | |
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Contextual Info: Si2304DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si2304ddsan6094415u6897u+6 | |
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Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES |
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vs-etf075y60u2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: V15P8-M3, V15P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available |
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v15p8-m3v15p8hm3j-std-020aec-q101+4 | |
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Contextual Info: SMD Power Inductor 0412CDMCB/DS Description • Magnetically shielded. • L W H: 4.75 4.35 1.2 mm Max. • Product weight: 0.12g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. x × RoHS Halogen Free Environmental Data |
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0412cdmcb/ds5500pcs25-jun-14 | |
IGBT with V-I characteristicsContextual Info: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etf150y65ue789962002/95/ec2011/65/eu+3 | |
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Contextual Info: V12P6-M3, V12P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 6 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available |
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v12p6-m3v12p6hm3j-std-020aec-q101+4 | |
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Contextual Info: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available |
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j-std-020aec-q101o-277a2002/95/ec+3 | |
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MC ATAU - Precision
Abstract: ACAS 0606 AT
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060electronic2002/95/ec2011/65/eujs709a+3 | |
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Contextual Info: TEPT5700 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° |
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tept57002002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: TEMT6200FX01 www.vishay.com Vishay Semiconductors Ambient Light Sensor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • Adapted to human eye responsivity |
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temt6200fx01aec-q101j-std-0202002/95/ec+3 | |
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Contextual Info: VSMY3940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • AEC-Q101 qualified |
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vsmy3940x01aec-q101j-std-0202002/95/ec+3 | |