25IM Search Results

c2555

Abstract: IC IGBT 25N120 25N120
Contextual Info: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C

CSF 672-28

Abstract: ABB thyristor CSA 932 csa 932 abb HEKSV-932 ABB HEKSV thyristors abb thyristors HEKSV-672 abb ys thyristor thyristoren
Contextual Info: V. T " j A B B SEMICONDUCTORS A6 Fast Switching Thyristors Ordering number Bestellnummer Num. de commande □Glbö3 fl 0 0 00 0 3 4 4 E IABB 3 ÖE D Schnelle Thyristoren V drm V rrm I trms T c = 5 0 °C Thyristors rapides I tavm I tsm Tc = 85°C A tp = 10 ms

LA4190

Abstract: LA4180 LA4132 T370 7420 ic ND742
Contextual Info: LA4180,4182 NolC 7 4 2 e iß 8075 1— 2 . 3 W 2 c h — *No,742C ’ 05^ 's H 71v ? GIP N0.742D IV / / / / 4 •2 •?■V í í J: BTL ï z m ^ - c s * « I VÍ» B T L ß p t 2 ,8 W * ^ * * , * 1 6 « / / ■S ¡tÜ 7 ¡ L M I 8 0 : VCC = 6V ,1^ = 4 0 f.: * > i ' T 2 * ^

MEMORY 29F

Abstract: SI 4606
Contextual Info: 29F68 29F68 D y n a m ic Connection Diagrams RAM T “T C o n tro lle r D< T i l l 29R h-perform ance m em ory con tro ller, replacing many SSI and M SrddM ci ;ouping several unique fu n ctio n s. It provides tw o 9-bit a d d re s s m 0 H e # a n d o 9-bit cou nters fo r row and colum n address

high power Triode for induction heating

Abstract: BRIMAR general electric valve data 4043 POWER TRIODE cold cathode thyratron 4228A BS448 cathode ray x ray filament transformer Vacuum Tube 300B
Contextual Info: Standard Valves Standard Telephones and Cables Limited V A L V E D IV IS IO N C O N N A U G H T HOUSE, A L D W Y C H , L O N D O N , W .C .2 Telephone : Holborn 8765 Telegrams “ Relay, Telex, London” PRICE Septem ber, 1947 15/- A_I Standard Telephones and Cables Limited

VEB Keramische Werke

Abstract: Keramische Werke Hermsdorf Manifer 183 VEB Kombinat zf filter Ringkerne DDR DDR-102 keramische werke hermsdorf spulen Schalenkerne HERMSDORF EE-55 FERRITE
Contextual Info: FERRITE-HANDBUCH K WH KOM BINAT VEB KERAM ISCHE W ERK E HERM SDORF/THÜR. DEUTSCHE DEMOKRATISCHE REPU BLIK A U S G A B E 1970 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung.

Contextual Info: LT1083/LT1084/LT1085 7.5A, 5A, 3A Low Dropout Positive Adjustable Regulator Semiconductor [description i T he LT1083 series of positive adjustable regulators regulator and power source are designed to provide 7.5A, 5A and 3A with conditions. The LT1083/LT1084/LT1085

Contextual Info: HYM594000A M-Series •H Y U N D A I 4M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22«F decoupling capacitor is mounted for each DRAM.

Contextual Info: HYUNDAI HYM532214A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532214Ais a 2M x 32-bit EDO mode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jFand 0.01 nF decoupling capacitors are mounted

JL04V

Abstract: JACS-5079
Contextual Info: *0N B JK f t Z9 E S 0 1 P S REV. DATE m W. « DESC RI PT IO N DCN NO. S. DR. ± m APPD. s CHK. * B APPD. □ 4# s i * □ □ ECIAL CONTROL ITEM o n im v ü q T U V DESIGNATION 1 3/4-18UNS-2A J L 0 4 V - 2 A 2 8 - 1 1 S E *- R SERIES S' V RECEPTACLE Hz

Contextual Info: Customer Information Sheet D R A W I N G No. : > * $ 4 9 0 - 0 0 - R6493-Q0 | IF IN D O U B T - ASK | I N 0T 10 S C A L E | THIRD ANGLE PROJECTION * NOTES: 1. A L L D I M E N S I O N S A R E ± 0 . 5 0 U N L E S S O T H E R W I S E 2. T E M P E R A T U R E R A N G E = -40°C T O +85°C.

Contextual Info: HYUNDAI SEMICONDUCTOR H Y M 584000 Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 In 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22pF decoupling capacitor Is mounted for each DRAM.

10N60A

Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
Contextual Info: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

Contextual Info: A M P J , 00 1 [ R t v . M A R 3t J T-L L* ; m PS iä£ Jf «'«r AMP 3 ^ x - ' i i ' f - 'XiX = 4i 108-5546-3 » a 0.5mm b ' 7 a # FS H=1.5mm 0, 5mm PIT C H FS C Q N N EC TO R H=1.5ram 1.1 f*l # ^^ %%*C\ 0.5mm tfy-f-FS ^ ^ □n t ë iE O & ll& f t £ &5e L T w & 0