25AUG1 Search Results

Contextual Info: T H IS LOG ÄNDERUNGEN, S C H R IT T HALTEN DIE C O N TRO LLED D O C U M E N T. DEM D E S C R IP T IO N P/N: 826936-4 REACTIVATION DATE DWN A PVD 25AUG1 1H f RP FORT­ D IE N E N , WIR IS A REVISIONS D IS T LTR T E C H N IS C H E N DRAW IN G UNS POS. BE­

Contextual Info: RF-13 Rev 25AUG14 BE25S–00SJ7–02.0–02–0305 BE25S–01SP1–02.0–02–0305 BE25S SERIES 50Ω MICROWAVE CABLE ASSEMBLIES SPECIFICATIONS For complete specifications see www.samtec.com?BE25S Mates with: BAR, SMA, SMP, 292PS, BSR High performance 25 AWG

byw76

Abstract: BYW72
Contextual Info: BYW72, BYW73, BYW74, BYW75, BYW76 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and

1N5062 diode

Abstract: 1N5060 1N5061 1N5061 vishay
Contextual Info: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading

BYV27-200

Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27 BYV-27-100
Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package

byt54m

Contextual Info: BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: VS-12TQ.PbF Series, VS-12TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 15 A FEATURES Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

VS119

Abstract: VS-19TQ015
Contextual Info: VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 19 A FEATURES • 125 °C TJ operation VR < 5 V Base cathode 2 • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation TO-220AC

byv28

Abstract: DIODE BYV28 BYV28-50 BYV28-200
Contextual Info: BYV28-50, BYV28-100, BYV28-150, BYV28-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package

Contextual Info: VS-16CTQ.PbF Series, VS-16CTQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 8 A FEATURES Base 2 common cathode • 175 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB Anode 2 1 Common 3

marking DX DIODE

Abstract: smd marking SOT343 marking 55 Sot-343 dx diode smd SUD493Z DX SOT diode smd marking dx
Contextual Info: SUD493Z SWITCHING DIODE Small Signal Fast Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-343 surface mounted device SMD packages. Features and Benefits     

marking j1k

Abstract: SMD CODE marking sot-23 J1K SOT23 SMD diode MARKING CODE 4 SDS19WK
Contextual Info: SDS19WK SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode

SDS2838EF

Abstract: SMD MARKING P3 smd dual diode code 05
Contextual Info: SDS2838EF SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-523F surface mounted device SMD packages. Features and Benefits   

J1 SOD323

Contextual Info: SDS19D SWITCHING DIODE High Voltage Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOD-323 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode

Contextual Info: SDS20F SWITCHING DIODE High Voltage Switching Diode General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits     

Contextual Info: SDS21WK SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode

smd j1a

Abstract: J1A marking
Contextual Info: SDS19WA SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode

smd diode marking 5d

Abstract: smd diode 5d smd code marking 5D diode 5d smd SOT-323F 5D DIODE SMD SDS152KF TP5A
Contextual Info: SDS152KF SWITCHING DIODE Small Signal Fast Switching Diode General Description Single general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-323F surface mounted device SMD packages. Features and Benefits y y y y y Silicon epitaxial planar diode

SDS19WKF

Abstract: marking j1k
Contextual Info: SDS19WKF SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits     

SDB310WK

Abstract: marking db8 sot23
Contextual Info: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature

DIODE GE

Abstract: SDB310WMU KSD-D5D017-001
Contextual Info: SDB B310W WMU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

marking j3a

Contextual Info: SDS20WA SWITCHING DIODE High Voltage Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode

SUB610

Contextual Info: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature

SMD diode CA2

Abstract: ca2 smd code SMD CA2 SDS2836F CA2 smd
Contextual Info: SDS2836F SWITCHING DIODE Small Signal Fast Switching Diode General Description Dual general-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-23F surface mounted device SMD packages. Features and Benefits    