256X4 STATIC RAM Search Results

Contextual Info: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS

CAT22C12

Contextual Info: CAT22C12 CAT22C12 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM FEATURES DESCRIPTION The Catalyst CAT22C12 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS circuitry for very low power consumption. The ac­

Contextual Info: A M _ S6501 I 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

Contextual Info: A M I _ S6501 AMERICAN 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256 x 4-bit ultra low power CMOS RAMs offers fully static operation with a single

S5101L-3

Abstract: S5101L-1
Contextual Info: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

S6501

Abstract: c i S6501 S6501-8 S6501L S6501L1 S6501L3 S6501L8 256X4 CMOS RAM
Contextual Info: S6501 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

Contextual Info: Xicnr Advance Information 1KBit X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120 ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption — Active: 40 mA Max.

HM435101

Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and

Contextual Info: w X22C12 1KB it X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100|jA Max.

Contextual Info: Jlaar X22C12 1KBit 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40mA Max. — Standby: 100^iA Max.

91L22

Contextual Info: it Advanced Micro Devices Am9122/Am91 L22 256x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Single 5-volt power supply — ±10% tolerance both Commercial and Military High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns

co-toc

Abstract: CERAMIC LEADLESS CHIP CARRIER 12G014-2C 12G014-2L 12G014-3C 12G014-3L 12G014-3X
Contextual Info: /G B L? GigaBit Logic 12G014 256x4 Bit Registered, Self-Timed Static RAM 2.5 ns Cycle Time _ 12G NanoRAM Family_ FEATURES Latch mode output for fast access with extended cycle Nanosecond access and cycle times Single-ended or differential clock input

91L22

Abstract: 93422 ram
Contextual Info: Advanced Micro Devices A m 91 22 /A m 91 L22 256x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns Low-power dissipation - Low power: 440 mW Commercial 495 mW (Military)

Contextual Info: Advance Information 1KBit X iB B X22C12 ! 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION • High Performance CMOS — 120 ns RAM Access Time • High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40 mA Max.

Contextual Info: GEC PLESSEY S V M I c; O N l IJ , I () K m a s io i Radiation Hard 256x4 Bit Static RAM s S10304FDS Issue 1.2 October 1990 Features • 3|im CMOS-SOS technology — — Address Butler» • Latch-up free Cell Array 32 R o m tt Columns Row Decoders (Enable)

256X4

Abstract: 1024x4 AM2168 Am91L22
Contextual Info: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active

X22C12

Abstract: 3817 X2212
Contextual Info: Xuaip Advance Information 1K Bit X22C12 256x4 Nonvolatile Static RA M FEATURES DESCRIPTION • High P erform ance CMOS — 120 ns RAM A ccess Tim e • High R e lia b ility — S tore C ycles: 1,000,000 — Data R etention: 100 Years • Low Pow er C o nsu m ption

29C3

Contextual Info: TEKTRONIX IN C / TRI ÖUINT 2bE Û TQ bS lô D OOOQM?^ / I ctM L / G ig a B it L o g ic b B TR£2 12G014 256x4 Bit Registered, Self-Timed Static RAM 2.5 ns Cycle Time _ 12G NanoRAM Family_ FEATURES Nanosecond access and cycle times Fully registered architecture with 3 selectable output

AM9101

Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
Contextual Info: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S

Contextual Info: 'F 'f Z - H f niET EC A L C A TE L 45E D • fc>15ñb51 GOOOGlfl T ■ MTEC 1.5 1 CMOS Standard Cell Library MTC-800 Services Features • Silicon-Gate 1.5 Micron CMOS Technology • Fully supported by MADE • Extensive M acrocell Library • ROMs, RAMs and other

LC3514AD

Abstract: 3044B LC66506B LC5866H 512X4 LC5732 LC66516B LC66E516 LC66P516 LC3514AL
Contextual Info: ' ' " " ' y Case _ • P in s& Packag .„ V a r i a t i o n ' ^ Num ber 1 LC 6 6 5 16 B 2 3 Applications 1 ‘ '3 N o . 3071 ' High*Performance . Q IP 64A 3057 . ¡Type D IC with 64S LC 6 6 P 5 16 M a x .:; t M at Voltage ; t ' '- ; ; : Piggyback.

88516b

Abstract: mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF
Contextual Info: FUJITSU MIC ROE LE CT RON IC S ^71 D • 374^7^2 0004570 0 « Fi ll T-90-60 April 1988 Edition 3.0 4-Bit Microcontrollers and Peripherals Table 1: FU JIT SU 4-BIT MCU F A M IL Y Process/ Series NMOS MB 8840 Series CMOS MB 8850/H MB 8850B Series CMOS MB 88200/H

52212HR

Abstract: IN3064 256X4 ncr 400 256x4 static ram
Contextual Info: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles

GM71C464A

Contextual Info: G M 53C 261 GoldStar GOLDSTAR ELECTRON CO, LTD. 65,536 WORDS x 4 BIT CMOS MULTIPORT VIDEO RAM D escription Features The GM53C261 is a high speed 65,536 x 4 bit mul­ tiport CMOS dynamic memory. The two ports, random access and serial access, are configured