256KX1 BIT Search Results

Contextual Info: WD\ EDI81256C 256Kx1 Static Ram ELECTRONIC DESIGNS, INC. 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory Fully asynchronous, the EDI81256C requires no clocks or

EDI81256C35QM

Contextual Info: moi, E D Ì8 1 2 5 6 C 256Kx1 Static Ram ELÉCTRONC DOfâNS. HG 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1. Random Access Memory

EDI81256C35QI

Contextual Info: EDI81256C 256Kx1 Static Ram 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks or refreshing for operation.

Contextual Info: ^E D I _ EDI81256C Electronic Designs Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The ED181256C is a 262,144 bit high performance, tow 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1.

p3545

Contextual Info: EDI81256C/P35/45/55 m o \ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It 256Kx1 bit CMOS Static Random Access Memory

256kx1

Abstract: EDI81256C45QB EDI81256C45LB EDI81256C55QB EDI81256C
Contextual Info: ^EDI _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no

256Kx1 bit

Contextual Info: moi _ EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no

uln buffer

Abstract: si1084
Contextual Info: ^EDI EDI81257CB Electronic Design» inc. High Speed 256K Monolithic SRAM OiF@M/OTD[N] 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 256Kx1 bit CMOS Static

Contextual Info: ^EDI EDI81257CA Electronic Design» Ino High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CA is a 262,144 bit high speed CMOS Static RAM organized as 256Kx1. Access times as fast as 25ns are available, with typical power consumption of

Contextual Info: ^EDI EDI81256C Electronic Designs Inci High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no

Contextual Info: EDI81256C/P35/45/55 W D\ High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/P is a 262,144 bit high performance, low power CMOS Static RAM organized as 256Kx1. It is available in Standard C and Low Power (P) versions.

Contextual Info: ^ED I EDI81256C Electronic D tilg n i Ine« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C is a 262,144 bit high performance, low power C M O S Static RAM organized as 256Kx1. Fully asynchronous, the EDI81256C requires no clocks

Contextual Info: ^EDI EDI81256CA/LPA/PA Electronic D« cign i Inc. High Speed 256K Monolithic SRAM G ^ ilO iO lM O T 256Kx1 Static RAM CATOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per­ formance, low power CMOS Static RAM organized as 256Kx1.

Contextual Info: ^E D I EDI81257CA Electronic D *a ig n a tn d High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CA is a 262,144 bit high speed CMOS Static RAM organized as 256Kx1. Access times as fast as 25ns are available, with typical power consumption of

Contextual Info: 23EDI L Electronic D *lg n * EDI81256C/LP/P High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256C/LP/P is a 262,144bit high performance, low power CMOS Static RAM organized as 256Kx1. Fully asynchronous, 1he EDI81256C/LP/P requires no

A14-A6

Contextual Info: ELECTRONIC D E S I G N S INC 3QE D • 323G114 OQQQSÖS T ■ EDI81256C/LP/P _ ß«olronle Dtilgnt Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS High Speed Monolithic , Features The EDI81256C/LP/P is a262,144bithighperformance, low power CMOS Static RAM organized as 256Kx1.

Contextual Info: ^ EDI EDI8M16256C Electronic Designs Inc« High Speed 4 Megabit SRAM Module •UiOi 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static

256Kx4 SRAM

Abstract: EDI8M4257C
Contextual Info: mD\ EDI8M4257C Electronic Designs Inc. High Speed Megabit SRAM Module 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/ output lines. The module is constructed of four 256Kx1

HY53C256

Abstract: HY53C256LS
Contextual Info: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

256kx1

Abstract: 22A16 EDI81257CB A710C 256Kx1 bit A34C
Contextual Info: ^EDI EDI81257CB Electronic Design» Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL

Contextual Info: V Dense-Pac Microsystems. Inc. ^ 256KX1/128KX DPS166167 MOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The D PS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes

EDI88128CS

Contextual Info: EDI81256C HI-RELIABILITY PRODUCT 256Kx1 High Speed Monolithic SRAM CMOS FEATURES • 128Kx8 bit CMOS Static The EDI88128CS is a high speed, high performance, megabit density Monolithic CMOS Static RAM organized as 128Kx8. ■ Random Access Memory • Fast Access Times of 35, 45, 55ns

Contextual Info: ^ElectroniEcDMiDpisInc*I EDI8M16256C High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static RAMs in leadless chip carriers surface-mounted

302AJ

Abstract: 256KX16
Contextual Info: • ^ED I EDI8M16256C ELECTRONIC DESIGNS INC. High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of sixteen 16 256Kx1 Static RAMs in leadless chip carriers surface-mounted