256K1 Search Results

Contextual Info: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e

Contextual Info: xDSL WAN Ethernet Bridge Controller M B 86976 Package • 144-pin, plastic QFP • FPT-144P-M03 ► Descrip tio n The Fujitsu MB 86976 xDSL WAN Ethernet Bridge Controller is a CMOS VLSI device designed for LAN-WAN bridging applications. It offers a high level of integration that

Contextual Info: C3 256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16

Contextual Info: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n

Contextual Info: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range

TBA 129-5

Abstract: WMS256K16L-XXX WMS256K16-XXX
Contextual Info: White Electronic Designs 256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR 256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102

LG 631 TV LG power supply

Abstract: lg crt tv motherboard circuit diagram Cirrus CL-GD5428 ihp 1c manual cl-gd5420 lg flat crt tv electronic diagram D5426 LG 631 TV LG lg flat screen crt tv electronic diagram 5420 bios
Contextual Info: CL-GD542X Preliminary Data Book 'CIRRUS LOGIC True Color VGA Family CL-GD5429 - Memory-Mapped I/O VGA GUI FEATURES • 32-bit GUI acceleration CL-GD5426/’28/’29 Accelerator with Local Bus — BitBLT (Bit block transfer) engine — Color expansion for 8- or 16-bit pixels

D14D

Abstract: CXD1852Q MD10 MD11 MD14 ha3120
Contextual Info: CXD1852Q MPEG1 Decoder For the availability of this product, please contact the sales office. Description The CXD1852Q is a single-chip MPEG1 decoder with a built-in CD-ROM decoder which allows decoding of MPEG1 system, video and audio layers. A built-in CD-ROM decoder enables direct connection

Contextual Info: ADVANCE M IC F 3 0 N 1 2 5 6 K X 1 8 /1 2 8 K x 36 H S T L , P I P E L IN E D L A T E W R IT E S R A M A C M h I A T F WRITE SRAM FEATURES • Fast cycle tim es 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single +3.3V + 0 .3 V /-0 .2 V pow er supply (V dd)

Contextual Info: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation

AS4C256K16F0-60JC

Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Contextual Info: WÊ High Performance 256Kxl6 CMOS DRAM 256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed

as4c256k16eo

Abstract: 256KX16 AS4C256K16E0 LO301
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed

Contextual Info: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)

Contextual Info: t t W 256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation

MB86907

Abstract: 00FF mb8690
Contextual Info: TurboSPARC Microprocessor User’s Guide October 1996 Revision 1.0 TurboSPARC Microprocessor User’s Manual Table of Contents Chapter 1 The TurboSPARC Microprocessor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 1.1 Integer Unit and Floating Point Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2

PG-FP5 Flash Memory Programmer

Abstract: 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3
Contextual Info: V850ES/Jx3 V850ES/Jx3 LPC LPC Low (Low Pin Pin Count Count) Series Series V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E 32 bit Single-chip Microcontrollers Feature V850ES/Jx3-L Industry-Leading Low power consumption Ideal for Battery-Driven Systems Low power & Low voltage

Contextual Info: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

Contextual Info: ADVANCE |U |I C R O N 256K 256KX 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6 and 7ns F ast O E# access tim es: 4 .5 ,5 an d 6ns

6E025

Contextual Info: Features • Refresh • O rganization: 262,144 w o rd s x 16 bits - 512 refresh cycles, 8 ms refresh interval • H ig h speed - 2 5 / 3 0 / 3 5 / 5 0 ns R A S access tim e - RA S-only o r CAS-before-RAS refresh o r self-refresh - 1 2 /1 6 /1 8 /2 5 ns co lu m n address access tim e

AS4LC256K16EO

Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Contextual Info: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time

AS4C256K16FO

Abstract: AS4C256K16FO-60
Contextual Info: 256K16FO 5V 256K X 16 CMOS DRAM Fast Page Mode Features • Organization: 262,144 words x 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption

WMS256K16L-XXX

Abstract: WMS256K16-XXX
Contextual Info: 256K16-XXX HI-RELIABILITY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 225)

First line 7aa ed tms 3874 9v voltage regulator

Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
Contextual Info: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target