256K X 16 Search Results

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

Contextual Info: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9

53C256

Abstract: 53C104 V53C104
Contextual Info: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory

CY7C1361V25

Abstract: CY7C1363V25 CY7C1365V25
Contextual Info: 329 CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device

S-1317

Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

pd 3174

Abstract: ACS35
Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

MX27C4100DC

Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
Contextual Info: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

0436A8

Contextual Info: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

MX27L4096

Abstract: PM0307 27l41-
Contextual Info: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

Contextual Info: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature

CY7C1361V25

Abstract: CY7C1363V25 CY7C1365V25
Contextual Info: CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device — 8.5 ns (for 100-MHz device)

Contextual Info: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O

27C4100

Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

27C4096

Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

27c4100

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

00C2H

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

pin diagram of ic 4066

Abstract: ic tc 4066 diagram 4066 cmos pin diagram of ic 4066 with pin out IDT7MB4065 7MB4066 P 4066
Contextual Info: PRELIMINARY IDT7MB4065 IDT7MB4066 256K X 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES In te g rate d D e vice Technology» In c. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static R AM modules The ID T 7 M B 406 5/40 66a re high-speed, high density 256K

5v rs232 UART interface

Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
Contextual Info: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module

Contextual Info: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

PCMCIA Flash Memory Card 512K

Abstract: PP-1040 ceweh
Contextual Info: PCMCIA/JEIDA FLASH MEMORY 1. VARIATION Part Number HW B257ES* HW S513ES* HW B101ES* HW B201ES* HWB401 E S * Memory Size 256K 512K 1M 2M 4M BYTE BYTE BYTE BYTE BYTE Description 256K 256K 512K 1M 2M x x x x x 16 16 16 16 16 bit bit bit bit bit FLASH FLASH