256K X 16 Search Results

pd 3174

Abstract: ACS35
Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

0436A8

Contextual Info: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

MX27L4096

Abstract: PM0307 27l41-
Contextual Info: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

MX27C4096DC-10

Abstract: MX27C4100 MX27C4096 MX27C4100DC-10 MX27C4096DC-12 MX27C4100DC10 MX27C4100DC EPROM 40PIN 27c4100 MX27C4100DC-12
Contextual Info: Introduction Selection Guide MX27C4100/27C4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 100/120/150 ns

Contextual Info: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O

27C4100

Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

27C4096

Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

00C2H

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

5v rs232 UART interface

Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
Contextual Info: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module

Contextual Info: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

PCMCIA Flash Memory Card 512K

Abstract: PP-1040 ceweh
Contextual Info: PCMCIA/JEIDA FLASH MEMORY 1. VARIATION Part Number HW B257ES* HW S513ES* HW B101ES* HW B201ES* HWB401 E S * Memory Size 256K 512K 1M 2M 4M BYTE BYTE BYTE BYTE BYTE Description 256K 256K 512K 1M 2M x x x x x 16 16 16 16 16 bit bit bit bit bit FLASH FLASH

Contextual Info: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IB M 0418 A8 AC LAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

Contextual Info: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation

IBM025161LG5D60

Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

IBM025161

Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

Contextual Info: KM4216C258 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. • Dual port Architecture The RAM port has a write per bit mask capability. 256K x 16 bits RAM port

KM4216C257

Abstract: M491
Contextual Info: PRELIMINARY Y KM4216C257/L/F, K M 4216V 257/L /F ^ CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K v 16 bits RAM port 512 X 16 bits SAM port • Performance range: The Samsung KM4216C/V257 is a CMOS 256K x 16 bit

Contextual Info: Integrated Device Technology. Inc 4 M EG ABIT 256K x 16 C M O S STATIC RAM M O DULE INFOrm ™ n i d t 7M4016 FEATURES: DESCRIPTION: • High-denslty 4 megabit (256K x 16) CMOS static RAM module • Low power consumption • Utilizes 16 IDT71257 high-performance 256K x 1 CMOS static

"Video RAM"

Abstract: KM4216V256 KM4216C256
Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

CY7C1361B-133AC

Abstract: CY7C1361B CY7C1363B
Contextual Info: CY7C1361B CY7C1363B PRELIMINARY 256K x 36/512K x 18 Flow-through SRAM Features Functional Description • Supports 133-MHz bus operations • 256K x 36/512K x 18 common I/O • Fast clock-to-output times — 6.5 ns for 133-MHz device The CY7C1361B and CY7C1363B are 3.3V, 256K x 36 and