25616R Search Results

25616R Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BQ25616RTWR		Texas Instruments	Standalone 1-cell 3.0-A buck battery charger with power path and 1.2-A boost operation 24-WQFN -40 to 85
BQ25616RTWT		Texas Instruments	Standalone 1-cell 3.0-A buck battery charger with power path and 1.2-A boost operation 24-WQFN -40 to 85

25616R Price and Stock

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Texas Instruments


Texas Instruments BQ25616RTWT Power Supply Support Circuit, Adjustable, 1 Channel, +3.9V, PQCC24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BQ25616RTWT		3,182			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments BQ25616RTWR IC BATT CHG LI-ION 1CELL 24WQFN / Charger IC Lithium Ion/Polymer 24-WQFN (4x4)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	BQ25616RTWR		18,000			1 - 10 - 100 $1.56 1000 $1.31 10000 $1.31	Buy Now

25616R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MH25616RNA Abstract: MH25616RNA-15 MH25616RNA-2 Contextual Info: MITSUBISHI LSIs M H 2 5 6 1 6 R N A , - 1 5 , - 2 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D BY 1 6-B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 25616R N A is 262144-word x 16-bit EPROM and consists o f fo u r industry standard 128K x 8 EPROMs and	OCR Scan	mh25616rna 4194304-bit 262144-word 16-bit +3mh25616rna-15 150ns mh25616rna-2	PDF
sd 0451 55 Abstract: IS65WV25616ALL IS65WV25616BLL IS65WV25616BLL-70TA3 Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby	Original	is65wv25616all is65wv25616bll 65wv25616all 65wv25616bll +3is65wv25616all/is65wv25616bll sd 0451 55 is65wv25616bll-70ta3	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MAY 2007 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels	Original	is65wv25616all is65wv25616bll 65wv25616all 65wv25616bll +1is65wv25616all/is65wv25616bll	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES SEPTEMBER 2008 DESCRIPTION The฀ISSI฀IS65WV25616ALL/IS65WV25616BLL฀฀are฀฀high- •฀ High-speed฀access฀time:฀55ns,฀70ns •฀ CMOS฀low฀power฀operation	Original	is65wv25616all is65wv25616bll is65wv25616all/is65wv25616bll 65wv25616all +165wv25616bll	PDF
IS65WV25616ALL Abstract: IS65WV25616BLL Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JANUARY 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS65WV25616ALL/IS65WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words	Original	is65wv25616all is65wv25616bll is65wv25616all/is65wv25616bll is65wv25616all-70ta2 +344-pin is65wv25616all-70ta3 is65wv25616bll-55ta1	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES FEBRUARY 2008 DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- • • • • • High-speed access time: 55ns, 70ns CMOS low power operation	Original	is65wv25616all is65wv25616bll 65wv25616all 65wv25616bll	PDF
Contextual Info: ç ,V M ITSUBISHI LS Is 25616RNA, •15, -2 ? > - ! .’ * ' ' ' 4 1 9 4 3 0 4 - B I T 2 6 2 1 4 4 -WORD B Y 16-B IT CMOS E R A S A B LE AND E L E C T R IC A L L Y REPROGRAM M ABLE ROM DESCRIPTIO N ^ The M 25616RNA is 262144-word x 16-bit EPROM and consists of four industry standard 128K x 8 EPROMs and	OCR Scan	mh25616rna h25616rna 262144-word 16-bit +6mh25616rna-15 150ns mh25616rna-2 200ns 25616r 250ns	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM SEPTEMBER 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels	Original	is65wv25616all is65wv25616bll 65wv25616all 65wv25616bll +1is65wv25616all/is65wv25616bll	PDF
Contextual Info: MITSUBISHI LSIs 25616RN A, -15,-2 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 - WORD BY 1 6-B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 1 6 R N A is 262144-w o rd x 16-bit EPROM and 'v , consists o f four industry standard 128K x 8 EPROMs and	OCR Scan	mh25616rn 262144-w 16-bit 150ns +3200ns 250ns mh25616rna	PDF
IS65WV25616ALL Abstract: IS65WV25616BLL IS65WV25616BLL-55TA1 Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES SEPTEMBER 2008 DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- • • • • • High-speed access time: 55ns, 70ns CMOS low power operation	Original	is65wv25616all is65wv25616bll is65wv25616all/is65wv25616bll 65wv25616all +265wv25616bll is65wv25616bll-55ta1	PDF