25616R Search Results

25616R Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BQ25616RTWT		Texas Instruments	Standalone 1-cell 3.0-A buck battery charger with power path and 1.2-A boost operation 24-WQFN -40 to 85
BQ25616RTWR		Texas Instruments	Standalone 1-cell 3.0-A buck battery charger with power path and 1.2-A boost operation 24-WQFN -40 to 85

25616R Price and Stock

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VPG Foil Resistors Y1625616R170Q0W RES SMD 616.17 OHM 0.3W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	Y1625616R170Q0W	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	Y1625616R170Q0W	Waffle Pack			100	1 - 10 - 100 $14.36 1000 $8.28 10000 $8.08	Buy Now
Texas Instruments BQ25616RTWR Battery Management Standalone 1-cell 3. 0-A buck battery ch A 595-BQ25616RTWT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BQ25616RTWR		3,176			1 $2.84 10 $2.13 100 $1.75 1000 $1.46 10000 $1.26	Buy Now
Maritex	BQ25616RTWR		4,151		1	1 $1.25 10 $0.92 100 $0.64 1000 $0.56 10000 $0.50	Buy Now
Texas Instruments BQ25616RTWT Battery Management Standalone 1-cell 3. 0-A buck battery ch A 595-BQ25616RTWR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BQ25616RTWT		1,093			1 $3.37 10 $2.54 100 $2.16 1000 $1.80 10000 $1.79	Buy Now
Vyrian	BQ25616RTWT		3,182			1 - 10 - 100 - 1000 - 10000 -	Get Quote

25616R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MH25616RNA Abstract: MH25616RNA-15 MH25616RNA-2 Contextual Info: MITSUBISHI LSIs M H 2 5 6 1 6 R N A , - 1 5 , - 2 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D BY 1 6-B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 25616R N A is 262144-word x 16-bit EPROM and consists o f fo u r industry standard 128K x 8 EPROMs and	OCR Scan	MH25616RNA, 4194304-BIT 262144-WORD 16-BIT) MH25616RNA 16-bit MH25616RNA-15 150ns MH25616RNA-2 MH25616RNA-15 MH25616RNA-2	PDF
sd 0451 55 Abstract: IS65WV25616ALL IS65WV25616BLL IS65WV25616BLL-70TA3 Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JUNE 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby	Original	IS65WV25616ALL IS65WV25616BLL 65WV25616ALL) 65WV25616BLL) IS65WV25616ALL/IS65WV25616BLL sd 0451 55 IS65WV25616ALL IS65WV25616BLL IS65WV25616BLL-70TA3	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MAY 2007 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels	Original	IS65WV25616ALL IS65WV25616BLL 65WV25616ALL) 65WV25616BLL) IS65WV25616ALL/IS65WV25616BLL	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES SEPTEMBER 2008 DESCRIPTION The฀ISSI฀IS65WV25616ALL/IS65WV25616BLL฀฀are฀฀high- •฀ High-speed฀access฀time:฀55ns,฀70ns •฀ CMOS฀low฀power฀operation	Original	IS65WV25616ALL IS65WV25616BLL IS65WV25616ALL/IS65WV25616BLLà 65WV25616ALL) 65WV25616BLL)	PDF
IS65WV25616ALL Abstract: IS65WV25616BLL Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION JANUARY 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS65WV25616ALL/IS65WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words	Original	IS65WV25616ALL IS65WV25616BLL IS65WV25616ALL/IS65WV25616BLL IS65WV25616ALL-70TA2 44-pin IS65WV25616ALL-70TA3 IS65WV25616BLL-55TA1 IS65WV25616ALL IS65WV25616BLL	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES FEBRUARY 2008 DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- • • • • • High-speed access time: 55ns, 70ns CMOS low power operation	Original	IS65WV25616ALL IS65WV25616BLL 65WV25616ALL) 65WV25616BLL)	PDF
Contextual Info: ç ,V M ITSUBISHI LS Is 25616RNA, •15, -2 ? > - ! .’ * ' ' ' 4 1 9 4 3 0 4 - B I T 2 6 2 1 4 4 -WORD B Y 16-B IT CMOS E R A S A B LE AND E L E C T R IC A L L Y REPROGRAM M ABLE ROM DESCRIPTIO N ^ The M 25616RNA is 262144-word x 16-bit EPROM and consists of four industry standard 128K x 8 EPROMs and	OCR Scan	MH25616RNA, H25616RNA 262144-word 16-bit MH25616RNA-15 150ns MH25616RNA-2 200ns 25616R 250ns	PDF
Contextual Info: IS65WV25616ALL IS65WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM SEPTEMBER 2006 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW typical operating 9 µW (typical) CMOS standby • TTL compatible interface levels	Original	IS65WV25616ALL IS65WV25616BLL 65WV25616ALL) 65WV25616BLL) IS65WV25616ALL/IS65WV25616BLL	PDF
Contextual Info: MITSUBISHI LSIs 25616RN A, -15,-2 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 - WORD BY 1 6-B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 1 6 R N A is 262144-w o rd x 16-bit EPROM and 'v , consists o f four industry standard 128K x 8 EPROMs and	OCR Scan	MH25616RN 262144-w 16-bit 150ns 200ns 250ns MH25616RNA,	PDF
IS65WV25616ALL Abstract: IS65WV25616BLL IS65WV25616BLL-55TA1 Contextual Info: IS65WV25616ALL IS65WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES SEPTEMBER 2008 DESCRIPTION The ISSI IS65WV25616ALL/IS65WV25616BLL are high- • • • • • High-speed access time: 55ns, 70ns CMOS low power operation	Original	IS65WV25616ALL IS65WV25616BLL IS65WV25616ALL/IS65WV25616BLL 65WV25616ALL) 65WV25616BLL) IS65WV25616ALL IS65WV25616BLL IS65WV25616BLL-55TA1	PDF