250VJ Search Results

250VJA

Abstract: irg4pc50u equivalent
Contextual Info: International IGR Rectifier PD-9.1470E IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter

DF2E-DC24V

Abstract: SPST RELAY 230 VAC 2A 5V Aromat DF2E-DC24V relay DF2e CF2-12V RELAY PCB DPDT 12V 255-2188-ND TT 2206 TT 2206 datasheet HJ4-L-DC24V
Contextual Info: Fig. Contact Arrange. Coil Coil Coil Resist. Curr. Voltage Ω (mA) Contact Ratings (A) 30 125 VDC VAC Additional Features Digi-Key Part No. 1 Price Each 25 50 100 Panasonic Part No. 4.46 3.37 DF2E-DC24V A DPDT 24DC 2,880 8.3 1 0.3 Sealed 255-1039-ND DPDT

Contextual Info: IN T E G R A T E D C IR C U IT S UC2577-ADJ UNITRODE PRELIMINARY Simple Step-Up Voltage Regulator FEATURES Requires Few External Components NPN Output Switches 3.0A, 65V max • Extended Input Voltage Range: 3.0V to 40V Current Mode Operation for Improved

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-

Contextual Info: IRF830 Advanced Power MOSFET FEATURES B V DSS - 500 V ^DS on = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO ii Q ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: RoHS COMPLIANT P /N : RS CUSTOMER: 3 05 -5 9 8 REV. REVISIONS APPROVED BY: REV. DESCRIPTION DATE A 2010±50 A T & BLUE -Æ N G R N /Y E L 4 I -a NOTES: BROWN 1. Z0680140 2. / i ^ K t e I R J È ® Ì R I 3. M I R ^ t l8 X 1 5 $ X ^ II® P a n t o n e 1 8 5 /ffi$ § /h í§

Contextual Info: IRF830 Advanced Power MOSFET FEATURES B ^D S S - 500 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology LO •'t Q II ♦ Lower Input Capacitance 1 .5 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter