250V 60A MOSFET Search Results

AC MOTOR SPEED CONTROL USING IGBT

Abstract: SMCV6G120
Contextual Info: . SMCV6M120-025, SMCV6M150-010 SMCV6G080-120, SMCV6G120-060 SENSITRON SEMICONDUCTOR DATA SHEET 5324, REV - DIGITAL SPEED CONTROLLER BRUSHLESS DC MOTOR DRIVER MODULE 100V/80A, 250V/60A, 600V/50A, 1200V/40A Features • • • Sinusoidal Sensorless/Resolver/Hall

SPM6M080-010D

Abstract: SPM6M060-025D 010D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

SPM6M080-010D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

APT5010JLLU3

Contextual Info: APT5010JLLU3 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

UJ-845

Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
Contextual Info: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2

BV 726 C 1 Converter

Abstract: BV 726 B BV 726 C APTM50DHM75T 4 switched reluctance motor miller
Contextual Info: APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 G1 S1 OUT1 OUT2 Q4 CR2 G4 0/VBUS SENSE S4 NTC1 0/VBUS VBUS SENSE NTC2 G4 S4 VBUS 0/VBUS S1 0/VBUS SENSE G1 OUT2 OUT1 NTC2 NTC1 VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C

APTM50SKM38T

Contextual Info: APTM50SKM38T Buck chopper MOSFET Power Module VBUS NT C2 Q1 G1 OUT S1 0/VBUS SENSE 0/VBUS 0/VBUS SENSE VBUS S1 G1 0/VBUS 0/VBUS SENSE NTC1 OUT OUT NTC2 NTC1 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • AC and DC motor control

2482 TRANSISTOR

Abstract: transistor 2482
Contextual Info: APTM50DAM38T Boost chopper MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • S2 VBUS VBUS SENSE

Contextual Info: APTM50SKM38T Buck chopper MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • • S1 G1 0/VBUS 0/VBUS SENSE OUT NTC2 Benefits

tf 115 250v 15a

Contextual Info: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

STY60NM50

Abstract: 250v 60A mosfet
Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

250v 60A mosfet

Abstract: STY60NM50FD ZVS phase-shift converters welding equipment smps schematic
Contextual Info: STY60NM50FD N-CHANNEL 500V - 0.045Ω - 60A Max247 FDmesh Power MOSFET with FAST DIODE ADVANCED DATA TYPE STY60NM50FD VDSS RDS(on) ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

250v 60A mosfet

Abstract: Max247 Zener-Protected MDmeshTMPower STY60NM50
Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

motor DC 400V 1600A

Contextual Info: APTM50DAM38CT Boost chopper VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C SiC FWD diode MOSFET Power Module NTC2 VBUS SENSE CR1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features

Contextual Info: APTM50DHM75T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C ID = 46A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • •

APT5010JLL

Abstract: APT5010JLLU2 0830A
Contextual Info: APT5010JLLU2 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

STY60NM50

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

mosfet 60v 60a

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

STE70NM50

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

mosfet 4430

Abstract: 4430 MOSFET 600v 60a STY60NM60
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM60 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.06Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

STE70NM50

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE