250V 5A NPN Search Results

Contextual Info: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated

BU406

Abstract: transistor BU406 bu408 250V transistor npn 2a ICM-10 transistor IC 12A 400v
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage

iC5A

Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

bu406

Abstract: bu408 transistor BU408
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cBO 400 V Collector-Emitter Voltage V cEO 200 V Emitter-Base Voltage

PTC10003

Abstract: AX670 ptc10002
Contextual Info: "6ÎT595Ô MI CROS EMI 02E CORP/POWER -^ l TECHNOLOGY 00440 D T - 3 3 ' l c? r P T C 10002P 11s DJLDD0144D7 PTC 10003P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 10 AMPERES 400 VOLTS era 1. BASE 2. COLLECTOR 3. EMITTER r - H i c F

transistor BU406

Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages

Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406H █ APPLICATIONS High Voltage Swltching . █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃

HBU406

Contextual Info: NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406 █ APPLICATIONS High Voltage Swltching . █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃

Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic V cbO Symbol 400 V Collector-Emltter Voltage VcEO 200 V Emitter-Base Voltage

nte98

Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly

Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

BU406

Abstract: BU408 250V transistor npn 2a BU406H 250v 5a npn transistor Vbe 1
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic V cbO Sym bol 400 V C ollector-E m ltter Voltage V cE O 200 V Em itter-Base Voltage

Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.

UPT521

Abstract: UPT522 UPT523 UPT524 UPT525
Contextual Info: UPT521 UPT522 UPT523 UPT524 UPT525 POWER TRANSISTORS 3 Amp, 400V, Planar NPN FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current: 5A • Turn-on Time: 200ns • Turn-off Time: 900ns DESCRIPTION Unitrode high voltage transistors provide

bu408 equivalent

Abstract: BU408 BU406 BU406H
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current

npn 10003

Abstract: 10003 NPN
Contextual Info: PTC10002, PTC10003 Series NPN Silicon Power Darlington Transistors 10 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS

TO-204aa MICROSEMI PACKAGE OUTLINE

Abstract: PTC10003 10003 NPN
Contextual Info: T f n 5950 M I C R O S E M I CORP/POWER ia^^Êlbiis^so 02E 0 0438 D i fpT C 10002 PTC 10003 TECH N D U 3Q Y Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 10 AMPERES 400 VOLTS 0.161 409 n|A • 0.15t (384J 1* 1.050 ‘ (28.66) M A X

BUT12AF

Abstract: BUT12AF equivalent BUT12 BUT12F
Contextual Info: SavantIC Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

bu408

Abstract: BU406
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage

BUT12AF equivalent

Abstract: BUT12AF BUT12F
Contextual Info: Inchange Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING

Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.

tf 115 250v 2a

Abstract: BUL53B
Contextual Info: BUL53B–SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 • FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 • HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package

Contextual Info: 2N6078 MECHANICAL DATA Dimensions in mm inches 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) NPN MULTI - EPITAXIAL POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68