irf1840g
Abstract: irf1840 irf18 IRFI840G
Contextual Info: International i“R Rectifier PD-9.642A IRFI840G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D I 500V V DSS= \ ^DS on = 0-85È2
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irfi840girf1840gt50kc1irf1840+1irf18
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ne5504n
Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
Contextual Info: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression
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e5501/5502/5503/5504-n600mane5501ne5502+8ne5504/5502/5503/5504-nne5503ne5504nne5503ncmos open collectorne5501ntransistor 5503
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irf1010
Abstract: irf1010 applications irf1010 MOSFET L377
Contextual Info: 4Ô55452 0 0 1 4 7 ^ 4 AST International k Rectifier IINR PD-9.814 IRF1010 HEXFET® Power MOSFET INTERNATIONAL R ECTIFIER Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching
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irf1010o-220irf1010 applicationsirf1010 mosfet+1l377
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