250457B Search Results

silicon carbide

Abstract: CD-260-1
Contextual Info: SSE D CREE RESEARCH INC • 250457b OüQDOEfi 52D « C R E Silicon Carbide Ultraviolet Photodetector Chip 1mm x 1mm Die Size CD-260-1.00-D fl E S E A H C H - i N C The Leader tn Silicon Carbide Solld-State Technology Electrical/Optical Characteristics At TA= 25°C

S1365

Abstract: 133-002
Contextual Info: Bandpass Filter 250457B 1. Features IF bandpass filter Single-ended operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device (ESD) 2. Package Dimension 13.30±0.2 7.62±0.1 7 8 9

cree ultraviolet

Abstract: Ablestik photodetector silicon carbide
Contextual Info: H E 8 .E A S C H - 250457b OOOOOSfl 520 • CRE S5E D CREE RESEARCH INC ï N O Silicon Carbide Ultraviolet Photodetector Chip 1mm x 1mm Die Size CD-260-1.00-D . The Leader In Silicon Carbide Solkî-State Technology Electrical/Optical Characteristics At TA= 25°C

Ablestik

Abstract: silicon carbide CD-260-0.30-D photodetector HC 8401 UV-A Photodetector ti 8401
Contextual Info: CREE RESEARCH INC SSE D 250457b □□□□□2b 75fl WM CRE • Silicon Carbide Ultraviolet Photodetector Chip 300 im x 300jim Die Size CD-260-0.30-D rw iPmCt C 4 k t R E S E A F t C H ^ l N C The Leader te Silicon Caitride Solid-State Techno logy Electrical/Optical Characteristics (At TA= 25°C

silicon carbide

Abstract: silicon carbide LED cree c470
Contextual Info: CREE RESEARCH INC 4ÖE ]> E5G457b 0000051 17b • CRErW/*¿ Silicon Carbide Blue LED C470-5D Description The C470-5D is a silicon carbide LED die with a 470nm peak wavelength and a typical optical power output of 13|iW when encapsulated in a standard clear epoxy package. Typical applications include full color com­

c430-dh85 cree

Abstract: C430-DH85 C430DH85 00E-6 LED pulse derating curve silicon carbide LED silicon carbide silicon carbide LED cree
Contextual Info: Super Blue LED C430-DH85 r e s e a r c h » i n c . The Leader in Silicon Carbide Solid State Technology Applications Features • Outdoor Full Color Displays & Moving Message Signs High Performance - 600 ^iW • Solid State Incandescent Replacement Bulbs

c430-dh85 cree

Abstract: C430DH85 Gan on silicon substrate LED pulse derating curve silicon carbide LED silicon carbide C430-DH85
Contextual Info: R E S E A R C H - 1 Super Blue LED C430-DH85 N C . The Leader in Silicon Carbide Solid State Technology A pp licatio ns Features • Outdoor Full Color Displays & Moving Message Signs High Performance - 600 p.W • Solid State Incandescent Replacement Bulbs

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

silicon carbide LED

Abstract: Sic led silicon carbide C470-5D Cree SiC blue cree c470
Contextual Info: CREE RESEARCH INC 4ÖE D • E5D457b 00D00S1 17b ■ C R E T - V l * iÄf Silicon Carbide Blue LED R E S E A R C H - C470-5D I N C îïiw Issderfti iSHcon Cati>^$oSd^âiate:Teci«noio9y Description The C470-5D is a silicon carbide LED die with a 470nm peak wavelength and a typical optical power output

Contextual Info: CREE RESEARCH INC SSE D • 2SG4S7L □□□□□2b 75fl « C R E Silicon Carbide Ultraviolet Photodetector Chip 300|im x 300 im Die Size CD-260-0.30-D WEÊÊBÈËgÊmÊÊ^m R E S E A 8 C H * Ï N C The Leader to Silicon Caitride So Ik&State Technology Electrical/Optical Characteristics At T A = 25°C)