2500V1 Search Results

application FULL WAVE RECTIFIER

Abstract: full wave rectifier diodes
Contextual Info: TABLE OF CONTENTS Rectifier Diodes, Low Voltage, Axial Leaded, Hermetic 600V-1000V, 0.5A-2.2A, 30ns-50ns. 6 50V-1000V, 1.5A-5.0A, 70ns-2000ns. 7

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

Contextual Info: Û U A LIT Y TECHNOLOGIES CORP 57E » 74bbû51 00QL 204 fiT2 • ô T Y O ptoisolalor Specifications _ H11G3 /_ y , - Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared

GTO thyristor

Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
Contextual Info: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500