250 OHM Search Results

mil-r-22

Abstract: RW20V AN3155 RW21V RW67V RW22V RW32V rw69v RW23V RW33V
Contextual Info: Resistor Guide Military Qualified Resistors MIL Spec Ohmite Series DWG 89040 RW SMD DWG 99001 OX/OY MIL-R-22 RP Rheostats MIL-R-26 MIL-R-26 RW20V 250 Series* RW21V 250 Series* RW22V 250 Series* RW23V 250 Series* RW24V 250 Series* RW29V/N 270 Series* RW30V

IN3002B

Abstract: 1N2981B 1N3014B DIODES 1n3001
Contextual Info: r 10 WATT, Metal Case DO-4, 10-32 VOLTS mA Ohms Ohms mA juA 6.8 7.5 8.2 9.1 10 370 335 305 275 250 1.2 1.3 1.5 2.0 3.0 500 250 250 250 250 1.0 1.0 1.0 1.0 1.0 150 75 50 25 10 •1N2975B •1N2976B ■1N2977B 1N2978B ¿A■1N2979 B 11 12 13 14 15 230 210

Contextual Info: ELECTRICAL CHARACTERISTICS: Part No. Inductance uH Isat mA Irms mA DCR (Ohms) max per wind 4.70 3000 250 0.17 TMP30002CT 7.10 2000 250 0.17 TMP30003CT TMP30004CT 11.50 1000 250 0.17 50 250 0.17 TMP30001CT 200 min SCHEMATIC FEATURES: Isolation: 500Vrms THD Style

Contextual Info: ELECTRICAL CHARACTERISTICS: Part No. TMP60131CT DCR Inductance Ohms max (uH) +/-15% per wind 4.70 Isat mA Irms mA 0.17 3000 250 0.17 2000 250 TMP60132CT 7.10 TMP60133CT TMP60134CT 11.50 0.17 1000 250 200 min 0.17 50 250 Inductance measured at 10kHz,100mV.

1N4099

Abstract: 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107
Contextual Info: LOW LEVEL ZENER DIODES LOW CURRENT: 250µA - LOW NOISE 1N4099-1N4121 * 1N4614-1N4627 PART NUMBER NOM ZENER VOLTAGE Vz @ 250 µA VOLTS MAX ZENER IMPEDANCE Zzt @ 250 µA (OHMS) MAX REVERSE LEAKAGE CURRENT Ir @ Vr (µAdc) (Vdc) MAX NOISE DENSITY AT Iz = 250 µA

Contextual Info: ELECTRICAL CHARACTERISTICS: Part No. Inductance uH +/-15% Isat mA TMP30005CS 4.70 3000 TMP30006CS 7.10 TMP30007CS TMP30008CS 11.50 200 min Irms mA DCR (Ohms) max pri wind 250 0.17 2000 250 0.17 1000 250 0.17 50 250 0.17 Turns Ratio 1:1:1+/-1% Inductante at 10kHz,0.1V.

Contextual Info: ELECTRICAL CHARACTERISTICS: Part No. TMP60143CS DCR Inductance Ohms max (uH) +/-15% per wind Isat mA Irms mA 4.70 0.17 3000 250 TMP60144CS 7.10 0.17 2000 250 TMP60145CS TMP60146CS 11.50 0.17 1000 250 200 min 0.17 50 250 .340 max .526 max .400 max Inductance measured at 10kHz,100mV.

6BQ5

Abstract: PENTODE el84 EL84 1N21 el84 pentode 6bq5 rf noval Ug1eff
Contextual Info: EL84 6BQ5 R.F. OUTPUT PENTODE DIMENSIONS AND CONNECTIONS: base: NOVAL Uf = 6,3 V If = 760 mA CLASS A AMPLIFIER: Ua = 250 V Ug2 = 250 V = 250 V Rk = 133 Ohm = 48 mA TYPICAL CHARACTERISTIC: Ua = 250 V Ia Ug1 = -7,3 V Ig2 = 5,5 mA Ia = 48 mA Ra = 5,2 kOhm = 0,3 V

S50055

Abstract: 11 AK 30 S-2 g2501 s200 251 5
Contextual Info: ATC 0 8 0 5 W L S E R I E S W I R E W O U N D CHIP INDUCTORS Inductor Selection Guide Inductance Tolerance Code nH T T JÄ . yK 2.8''j'2ÍO ( 3.0 <? 250 (MHz) 3.3 <? 250 (MHz) <g>2501 6.8 €* 2501 7.5 <S* 250 « 8.2 <?>250 (MHz) 10<5>250( 12 <5*250 ( 15<3*250(

1m7 smd

Abstract: chokes for power lines ICMC12 marking 1X ICMC14 Microspire X_S marking 4x40 LCMC transistor smd marking LN
Contextual Info: 79 Data Line EMI Filters - DLEF Series Electrical Data ID Code Number of lines Max. Current mA L/winding µH RDC max mΩ Isolation Vrms DLEF12 020 1S DLEF13 020 1S DLEF14 020 1S 2 3 4 100 100 100 5 5 5 250 250 250 250 250 250 Connections Typical Dimensions mm

6BQ5

Abstract: EL84 el84-6bq5
Contextual Info: EL84 6BQ5 R.F. OUTPUT PENTODE DIMENSIONS AND CONNECTIONS: base: NOVAL Uf = 6,3 V If = 760 mA CLASS A AMPLIFIER: Ua = 250 V Ug2 = 250 V = 250 V Rk = 133 Ohm = 250 V Ia = 48 mA = -7,3 V Ig2 = 5,5 mA Ia = 48 mA Ra = 5,2 kOhm Ig2 = 5,5 mA = 11,3 mA/V = 40 kOhm

Microspire

Contextual Info: 79 Data Line EMI Filters - DLEF Series Electrical Data ID Code Number of lines Max. Current mA L/winding µH RDC max mΩ Isolation Vrms DLEF12 020 1S DLEF13 020 1S DLEF14 020 1S 2 3 4 100 100 100 5 5 5 250 250 250 250 250 250 Connections Typical Dimensions mm

250VAC8A

Contextual Info: POWER SWITCHES SERIES RA AGENCY APPROVALS SPECIFICATIONS Contact Rating: 2A 250 VAC, 6A 250 VAC, 8A 250 VAC Contact Resistance: <20 mohm Insulation Resistance: 109 Ohms min 5000 Volts across open contacts Electric Life: 10.000 make & brake cycles @ full load

1N4099

Abstract: 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107
Contextual Info: KNOX SEMICONDUCTOR, INC. LOW LEVEL ZENER DIODES LOW CURRENT: 250µA - LOW NOISE 1N4099-1N4121 * 1N4614-1N4627 NOM ZENER VOLTAGE Vz @ 250 µA VOLTS MAX ZENER IMPEDANCE Zzt @ 250 µA (OHMS) 1N4099 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107 1N4108

a1271

Abstract: A1275 A1271 Y A102 A 004 ma a305 k a1271
Contextual Info: OptoMOS AC/DC Solid State Switches E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170 120

LAA120 equivalent

Abstract: LAA110 equivalent
Contextual Info: OptoMOS AC/DC Solid State Switches E ngineering S pecifications LAA110 LAA120 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 O A A 160 250 Output C haracteristics P eak Blocking V 350 250 350 250 350 250 350 250 Continuous Rated Load (m A)* 120 170 120 170 120

EMT3H

Contextual Info: E-Series Plug-In Mixer 0.1 - 250 MHz EMT-3H V3.00 R-3 Features ● ● LO Power: +17 dBm Up to +14 dBm RF Specifications @ 25°C Frequency Range RF LO IF 0.1 - 250 MHz 0.1 - 250 MHz DC - 250 MHz Conversion Loss dB 0.2 - 125 MHz 0.1 - 250 MHz Typical 5.0

Transformer sepic

Abstract: EP13-TH
Contextual Info: ELECTRICAL CHARACTERISTICS: Part No. Inductance uH TMP60153CT 4.70 Isat mA Irms mA Turns Ratio 3000 250 1:1:1:1:1 0.2 0.2 DCR (Ohms) max TMP60154CT 7.10 2000 250 1:1:1:1:1 TMP60155CT 11.50 1000 250 1:1:1:1:1 0.2 TMP60156CT 200 min 500 250 1:1:1:1:1 0.2 Inductance measured at 10kHz,10mV. Tolerance is +/-15%

1981-R

Abstract: LAA110 LAA120 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160
Contextual Info: OptoMOS AC/DC Solid S ta te S w itch es E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170

ZS90

Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
Contextual Info: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250

2n2m

Abstract: PH 33 G
Contextual Info: UNSHIELDED CHIP INDUCTORS PM0805 SERIES L Test Q Test Freq. Freq. Miller L+20% Q Number nH Min. MHz MHz PM0805-2N2M 2.2 15 250 1500 PM0805-3N3M 3.3 50 250 1500 PM0805-6N8M 6.8 50 250 1000 PM0805-8N2M 8.2 50 250 500 PM0805-12NM 12 50 250 500 PM0805-15NM 15

PM0805-6N8M

Contextual Info: UNSHIELDED CHIP INDUCTORS PM0805 SERIES L Test Q Test Miller L±20% Q Freq. Freq. Number nH Min. MHz MHz PM0805-2N2M 2.2 15 250 1500 PM0805-3N3M 3.3 50 250 1500 PM0805-6N8M 6.8 50 250 1000 PM0805-8N2M 8.2 50 250 500 PM0805-12NM 12 50 250 500 PM0805-15NM 15

EMT-3MH

Abstract: emt3mh
Contextual Info: E-Series Plug-In Mixer 1 - 250 MHz EMT-3MH V3.00 Features ● ● R-3 LO Power: +13 dBm Up to +9 dBm RF Specifications @ 25°C Frequency Range RF LO IF 1 - 250 MHz 1 - 250 MHz DC - 250 MHz Conversion Loss dB 2 - 125 MHz 1 - 250 MHz Typical 5.0 6.0 Maximum

Contextual Info: O CM oo oo .44711.4 .760 19.3 REVISIONS DESCRIPTION REV 011 .250 6.4 DATE REVISED APPROVED mm .250 6.4 .125 32 PANEL •OSSPJ PLUG OSM' JACK .250-36, UNS-2A MOUNTING NUT ^ H E X 6.4 LOCKWASHER ELECTRICAL Nominal Impedance Ohms Frequency Range (GHz) DC to