250 C 60 Search Results

B85121-D-B3

Abstract: nf005 B85121-A-B1 B85121AB39 B85I21-A-B7 B85111-A-B30 B85121-A-B15 B85121-A-B9 b85121ab24 B85121-D-B2
Contextual Info: Durchführungskondensatoren Feed-through Capacitors Ausfuhrung mit Anschlußdrähten ym m m m m mmmwM ¡ t i i i i i i i i i i W S B S . V-A/~,S0/60Hz I l l i c i t ! 10 16 25 350/250^ 350/2501' 160/110 80/ 42 250/100 250/ 42 440/250 600/250 440/250 350/250

D-68623

Abstract: common anode diode TO-220 9A25
Contextual Info: DGS 9-025AS DGS 10-025A DGSK 20-025A IDC = 12 A VRRM = 250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V V Marking on product 250 9A25AS A 250 DGS 9-025AS C Single A 250 250 250 250 DGS 10-025A DGS 10-025A DGSK 20-025A DGSK 20-025A

D-68623

Abstract: DGS3-025AS 8025A
Contextual Info: DGS 4-025A DGS 3-025AS DGSK 8-025A IFAV = 5.4 A VRRM = 250 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V Marking V on product A 250 250 DGS 3-025AS 3A025AS 250 250 DGS 4-025A DGS 4-025A 250 250 DGSK 8-025A DGSK 8-025A C Single A Single

7508M

Abstract: RR1000 STL-J1-250-4M-01 0752
Contextual Info: MATERIAL: NYLON MATERIAL: NYLON 6/6 6/6 UL-94 V-0, RMSUL-94 V-2, RMS-01 19 COLOUR:NATURAL COLOUR:NATURAL 1 2 3 4 C B A "A" STL-J#-250-4M-01 STL-J#-250-4M-19 4[0.157] STL-#-250-3-01 STL-#-250-3-19 4.8[0.189] STL-J#-250-6M-01 STL-J#-250-6M-19 6[0.236] STL-J#-250-8M-01

ZS90

Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
Contextual Info: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250

Semikron SKB L5b

Abstract: Semikron SKB b 500 semikron skb b 380 Semikron SKB b 80 Semikron SKB b 500 C 1000 C1500L5B Semikron SKB 380 C1000L5B Semikron SKB 250 Semikron SKBA b 500
Contextual Info: V 120 400 800 1000 1200 V 40 125 250 380 500 Miniature Bridge Rectifiers ID Tamb = 45 °C VRSM VVRMS VRRM 1,8 A 2,5 A Cmax µF SKB B 40 C 1000 L5B 5000 SKB B 80 C 1000 L5B 1600 SKB B 250 C 1000 L5B 800 SKB B 380 C 1000 L5B 600 SKB B 500 C 1000 L5B 400 Types

A197P

Abstract: a197 1n3736 1N4053 A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A190A
Contextual Info: R E C T IFIE R S 250 TO 740 A M P E R E S JEDEC GE TYPE io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)

GU 2-125

Abstract: Elec-Trol R4561-2 ELECTROL R2677-2
Contextual Info: G E Pow er Electrolytic Capacitors 105 ° C Product 50 to 250 WVDC 250 to 150,000 uF — E X T E M M rT m P E fW W M • t im Broad Capacitance Range • Increased Volumetric Efficiency • Low E S R • Standard Ratings â Genera! Specifications r C A P A C ITA N C E RANGE -

376 kp/mmkp

Abstract: MKP 376 kp MKP 376 capacitor MKP MKP capacitor 376 kp MKP 378 SMPS
Contextual Info: AC & Pulse Film Capacitors YOUR APPLICATION High AC voltage UAC > 250 V UDC 400.2500 V [UDC 3000.5000 V * ] Low AC voltage UAC ≤250 V UDC 100.630 V AC-voltage >600 VAC AC-voltage 250.600 VAC Low cap. value C ≤12 nF Low cap. value <3 nF High cap. value

LH1571

Contextual Info: iAisr rMicroelectronics Preliminary Data Sheet LH1571 Protected Power Feed Solid-State Relay Description Features Load Voltage 250 V Load Current 250 mA Typical 4.0 Cl R on Level C current-limited dc switch UL1459 approval pending CMOS compatible logic control

Contextual Info: UNCONTROLLED DOCUMENT Pb 600 500 400 300 200 O C 100 N 1 10 100 C N 1000 10000 O 250 200 150 Z 100 R 50 XL 1 10 Z 100 R 1000 10000 XL Steward

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

AD5310

Abstract: SPT5310
Contextual Info: SPTS3 I O □ C adeka* A m plify the Human Experience 12-BIT, 250 MWPS ECL D/A CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • 12-Bit, 250 MWPS Digital-to-Analog Converter ECL Compatibility Low Glitch Energy: 15 pV-s Low Power: 600 mW

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800

RCA423

Abstract: RCA410 RCA411 RCA1B09 RCA1B06 2N6514
Contextual Info: Power T ransistors High-Voltage n-p-n and p-n-p Type Selection Charts cont’d -hFE V CEO*SUS* V C E X (sUs) 'c V CE V V A V 'c E X mA Temp.—°C V CE^sat^“ V 25 150 200 250 275 300 300 350 350 250 225 350 300 400 325* 375 450 Package 15 min 10-50 15 min

ideas

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: C Schematic: Properties Test conditions Value Unit Tol. Inductance 1 100 kHz/ 250 mV Inductance 2 100 kHz/ 250 mV L1 13 µH ±20% L2 33000 µH Rated current ±20% ∆T = 40 K IR1

Contextual Info: VCO Product Specification Model: VCO190-200T Rev: A Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 150 200 250 MHz X -35 ° to 85 ° C Remarks Tuning Voltage: 150 MHz 1 250 MHz

T5310

Abstract: AD5310
Contextual Info: S P T5310 SPT SIGNAL p r o c e s s i n g t e c h n o l o g i e s 12-BIT, 250 MWPS ECL D/A CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • 12-Bit, 250 MWPS Digital-to-Analog Converter ECL Compatibility Low Glitch Energy: 15 pV-s

Edal Series B780 Sub-Miniature Silicon High Voltage Rectifier

Abstract: B780
Contextual Info: Edal SERIES B780 SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER PART NUMBER PIV VOLTS Io ma @ 40o C Vf @ Io @ 25o C Ir @ PIV @ 25o C B780-50 B780-60 B780-70 B780-80 B780-100 B780-120 B780-150 B780-200 5000 6000 7000 8000 10000 12000 15000 20000 600 400 300 250

m8732

Abstract: M8846 M6830 M7131 M7206 m3211
Contextual Info: .125 MAX. .250 MAX. 1.00 MIN. 147 Central Avenue Hackensack, NJ 07601 Phone: 201 489-8989 Fax: (201) 489-6911 P art Number Des ign V oltage A mps MS C P C M8798 C M8910 1.25 1.35 .012 .220 .004 .020 1,000 25,000 C -6 C -2R C M7201 C M7202 C M7203 C M7018

el86

Abstract: Mullard pentode el86
Contextual Info: O U TPU T PENTODE EL86 Low impedance output pentode suitable for use in single-ended push-pull output stages and series regulators. HEATER vh lh 6.3 760 V mA 13 6.8 <600 <250 pF pF C A P A C I T A N C E S measured w ithout an external shield Cin C out ca -g l

M7252

Abstract: M7239 M8112 M7263 M7238 M8022 M7234 M7264 M7236 M7255
Contextual Info: Ø.159 MAX. Ø.125 MAX. .375MAX. P art Number Design V oltage A mps MS C P L ife Hours F ilament T ype C M7234 C M7235 5.0 5.0 .030 .080 .030 .150 16,000 3,000 C -2F C -2R C M7236 C M7237 C M7238 C M7239 5.0 5.0 5.0 5.0 .115 .120 .115 .125 .200 .200 .100 .250

60N80

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ