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    25-B3 Search Results

    25-B3 Datasheets (12)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    25-B300-02
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-03
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-04
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-06
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-08
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-10
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    25-B300-12
    NTE Electronics TERMINAL BLOCK BARRIER Original PDF 17.96MB 5
    badge SZ25B3
    SUNMATE electronic Co., LTD Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability for general-purpose voltage regulation applications.Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, low leakage current, high reliability, junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability, suitable for voltage regulation applications.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability. Original PDF
    badge SMZ25B3
    SUNMATE electronic Co., LTD Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 4 to 1900 ohms depending on型号.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 3.0 to 200V voltage range, 1.3W power dissipation, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 7 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, and low leakage current, suitable for high reliability applications requiring stable zener voltage and high peak reverse power handling.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and zener impedance from 4 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with a zener voltage range of 3.0 to 200 V, 1.3 W power dissipation, low leakage current, and operating junction temperature from -65 to +200 °C.Surface mount silicon Zener diode in SOD-123FL package with 3.0 to 200 V zener voltage range, 1.3 W power dissipation, low leakage current, and operating junction temperature from -65 to +200 °C. Original PDF
    badge GD25B32E
    GigaDevice Semiconductor (Beijing) Inc 32M-bit Serial Flash, standard SPI and Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s, 8-lead USON/WSON, 8-lead SOP, 24-ball TFBGA. Original PDF
    badge GD25B32C
    GigaDevice Semiconductor (Beijing) Inc 32M-bit Serial Flash, supports SPI, Dual SPI 240Mbits/s, Quad SPI 480Mbits/s, 8-lead SOP/DIP/USON/WSON. Original PDF
    badge LP3986-25B3F
    LowPowerSemi 300mA ultra-low noise LDO regulator with 2.5V to 6V input voltage range, 220mV dropout voltage at 300mA, low quiescent current, high ripple rejection, and stable operation with ceramic capacitors in SOT-23 package. Original PDF
    SF Impression Pixel

    25-B3 Price and Stock

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    KEMET Corporation T525B336M016ATE090

    CAP TANT POLY 33UF 16V 1411
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    DigiKey () T525B336M016ATE090 Cut Tape 4,168 1
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    T525B336M016ATE090 Digi-Reel 4,168 1
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    GigaDevice Semiconductor (Beijing) Inc GD25B32ETAGR

    IC FLASH 32MBIT SPI/QUAD 8SOP
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    DigiKey () GD25B32ETAGR Digi-Reel 2,905 1
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    GD25B32ETAGR Cut Tape 2,905 1
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    GigaDevice Semiconductor (Beijing) Inc GD25B32ESIGR

    IC FLASH 32MBIT SPI/QUAD 8SOP
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    DigiKey () GD25B32ESIGR Cut Tape 1,919 1
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    GD25B32ESIGR Digi-Reel 1,919 1
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    Braemac Americas-Symmetry GD25B32ESIGR 1
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    KEMET Corporation T525B336M006ATE080

    CAP TANT POLY 33UF 6.3V 1411
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    DigiKey () T525B336M006ATE080 Cut Tape 1,565 1
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    T525B336M006ATE080 Digi-Reel 1,565 1
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    Mouser Electronics T525B336M006ATE080 1,949
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    Avnet Abacus T525B336M006ATE080 Tape & Reel 31 Weeks 2,000
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    KEMET Corporation T525B336M010ATE080

    CAP TANT POLY 33UF 10V 1411
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    DigiKey () T525B336M010ATE080 Digi-Reel 911 1
    • 1 $1.40
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    T525B336M010ATE080 Cut Tape 911 1
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    Bristol Electronics T525B336M010ATE080 1,966
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    ComSIT USA T525B336M010ATE080 5
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