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25-B300-02
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NTE Electronics
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TERMINAL BLOCK BARRIER |
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17.96MB |
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25-B300-03
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B300-04
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
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25-B300-06
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B300-08
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B300-10
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
5 |
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25-B300-12
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NTE Electronics
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TERMINAL BLOCK BARRIER |
Original |
PDF
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17.96MB |
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SZ25B3
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability for general-purpose voltage regulation applications.Surface mount silicon Zener diode in SMA package with power dissipation of 1.3W, voltage range from 2.7 to 200V, and junction temperature range from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, low leakage current, high reliability, junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, with low leakage current and high reliability, suitable for voltage regulation applications.Surface mount silicon Zener diode in SMA package, 1.3W power dissipation, 2.7 to 200V zener voltage range, junction temperature -65 to +200°C, low leakage current, high reliability, and high peak reverse power dissipation capability. |
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GD25B32E
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GigaDevice Semiconductor (Beijing) Inc
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32M-bit Serial Flash, standard SPI and Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s, 8-lead USON/WSON, 8-lead SOP, 24-ball TFBGA. |
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SMZ25B3
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 4 to 1900 ohms depending on型号.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 3.0 to 200V voltage range, 1.3W power dissipation, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode SMZ253A-SMZ25D0 with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with power dissipation of 1.3W, voltage range 3.0 to 200V, low leakage current, and zener impedance from 7 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and operating junction temperature from -65 to +200°C.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, and low leakage current, suitable for high reliability applications requiring stable zener voltage and high peak reverse power handling.Surface mount silicon Zener diode in SOD-123FL package with 1.3W power dissipation, 3.0 to 200V voltage range, low leakage current, and zener impedance from 4 to 1900 ohms depending on type.Surface mount silicon Zener diode in SOD-123FL package with a zener voltage range of 3.0 to 200 V, 1.3 W power dissipation, low leakage current, and operating junction temperature from -65 to +200 °C.Surface mount silicon Zener diode in SOD-123FL package with 3.0 to 200 V zener voltage range, 1.3 W power dissipation, low leakage current, and operating junction temperature from -65 to +200 °C. |
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GD25B32C
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GigaDevice Semiconductor (Beijing) Inc
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32M-bit Serial Flash, supports SPI, Dual SPI 240Mbits/s, Quad SPI 480Mbits/s, 8-lead SOP/DIP/USON/WSON. |
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LP3986-25B3F
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LowPowerSemi
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300mA ultra-low noise LDO regulator with 2.5V to 6V input voltage range, 220mV dropout voltage at 300mA, low quiescent current, high ripple rejection, and stable operation with ceramic capacitors in SOT-23 package. |
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SZ25B3
