25 AMP DIODE Search Results

Series MR7/MS7/MT7 Silicon Fast Recovery 6.0 AMP Diodes

Abstract: diodes ms-7g PIC16F877A circuit diagram 25 amp diode MT-7-F mr7k5 Edal
Contextual Info: EDAL SERIES MR7/MS7/MT7 SILICON FAST RECOVERY 6.0 AMP DIODES INCHES MIN. MAX. 0.047 0.053 0.362 0.389 0.362 0.389 .750 DIM. A B C D Io 6 Amp Is @ 50 C AMPS 400 Vf 1.4 max Ir 60 uA max V@ @ 6 AMP @ 25 C PIV @ 25 C Trr – Recovery Time measured from .5 amp forward to 1 amp reverse to .25 amp

Contextual Info: HIGH VOLTAGE, HIGH CURRENT ULTRA-FAST RECOVERY SILICON RECTIFIER DIODES PRV 1200 1500 1800 TYPE 3RUS2120 3RUS4120 3RUS2150 3RUS4150 3RUS2180 3RUS4180 ELECTRICAL CHARACTERISTICS at TA =25°C Unless Otherwise Specified 3RUS2 3RUS4 1.25 Amp 1.50 Amp 2.0 Amp

MSK4358

Abstract: Bvn 10k
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 110°C Fully Isolated Bridge

Series MA4/BA491/1N5000 Silicon General Purpose 3.0 AMP Diodes

Abstract: diodes ba4918 ba4913 ba49180 ba4916 ba4912 ba4914 1N5000 1N5402
Contextual Info: EDAL SERIES MA4/BA491/1N5000 SILICON GENERAL PURPOSE 3.0 AMP DIODES INCHES MIN. MAX. 0.048 0.052 0.19 0.21 0.285 0.375 1.00 DIM. A B C D STYLE Io 3 Amp @ Is 200 AMPS Vf 1.3 max. v@ Ir 25 uA max. 50 3.0 amp @ @ PIV @ MILLIMETER MIN. MAX. 1.02 1.30 4.80 5.30

Series MR4/MS4/MT4 Silicon Fast Recovery 3.0 AMP Diodes

Abstract: diodes MR4B5 MR4A mt4m5 Edal
Contextual Info: EDAL SERIES MR4/MS4/MT4 SILICON FAST RECOVERY 3.0 AMP DIODES DIM. A B C D Io 3 Amp @ Is 200 AMPS Vf 1.4 max. v@ Ir 25 uA max. INCHES MIN. MAX. 0.048 0.052 0.19 0.21 0.285 0.375 1.00 50 3.0 amp @ @ PIV @ MILLIMETER MIN. MAX 1.02 1.30 4.80 5.30 7.20 9.50 25.4

"Schematic Diagrams"

Abstract: SCR 25a 200 amp scr
Contextual Info: CRYDOM CO 31E D 25M2537 CBYZ3PM DGDObDb 7 I CRY POWER MODULES C O M P A N Y L - 1 38 m 36 05 mm . 13A-42.5A I 0 50 in I 1-12 70 m m ] SCR/DIODE CIRCUITS Part Number Identification 1st Digit Series Type 2nd Digit Current L-Casestyle 3-13 Amp 4-20 Amp. 5-25 Amp

NTE2338

Abstract: zener pc 838 zener diode 5A
Contextual Info: NTE2338 Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V

Contextual Info: SERIES KDL ENGINEERING DATA SHEET RELAY - LATCHING 3 PST/NO +AUX, 25 AMP Magnetic latch operation All welded construction 3 PST configuration with 1 PDT, 2 AMP auxiliary contacts in one inch cube Contact arrangement Designed to the performance standards of

MIL-S-12883

Abstract: M550 SO-1059-8914 .112-40 UNC - 2A Diode Zener a15
Contextual Info: M550 ENGINEERING DATA SHEET RELAY - NONLATCH 3 PSTNO, 25 AMP + 1 PDT, 2 AMP Non latching hermetically sealed relay Contact arrangement 3 PSTNO + 1 PDT Coil supply Direct current Meets the requirements of MIL-R-6106 / 13 PRINCIPLE TECHNICAL CHARACTERISTICS

9339-10274

Abstract: Leach Relay M6106 relay Relay leach Leach Relay 9339-10274
Contextual Info: SERIES 9339 ENGINEERING DATA SHEET RELAY - NONLATCH 3 PST/NO + AUX, 25 AMP Balanced-Armature design Hermetically sealed 3 PST configuration with 1PDT, 2 Amp auxiliary contacts Contact arrangement Designed to the performance standards of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS

ZR61

Abstract: D15A n4007 diode ZR204 DO 1 ln4001 ln4001 diode ZR602 Scans-00109897 ZR30CR
Contextual Info: SILICON DIODES Power Rectifiers up to 1.5 amps. Maximum Ratings and Characteristics Type No. Mean Rectified Current Surge Ratings at 25°C C ase Temp. arr P- Repetitive Peak Inverse Voltage volts 25°C 100°C amp. Peak (1 mS) Average (5 mS) ZR60 ZR61 ZR62

Contextual Info: 9 -9 7 D 2 DPAD1, DPAD2, PPAD5, DPAD10 DUAL PICO-AMP DIODE • H IGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25‘ C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1 At 25°C free air temperature: Min Electrical Characteristics

SF25N10D4

Contextual Info: SF25N10D4 PRODUCT DATA SHEET 100 VOLT, 25 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated Parameter Rating Units 100 34 V A 21 A BVDSS ID @ VGS = 10V, TC = 25°C Drain to Source Breakdown Voltage

KDA diode

Contextual Info: SERIES KDA ENGINEERING DATA SHEET RELAY - NONLATCH 3 PST/NO +AUX, 25 AMP All welded construction 3 PST configuration with 1 PDT, 2 AMP auxiliary contacts in one inch cube Contact arrangement Designed to the performance standards of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS

30FQ045

Abstract: 1N6391 JANTX JANTXV1N6391
Contextual Info: PD-2.385 International IS Rectifier 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 [ MIL-S-19500/553 ] SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Description/Features Characteristics 1N6391 Units V AV R ctengular waveform 25* A V 45 V

SF25N20D4

Contextual Info: SF25N20D4 PRODUCT DATA SHEET 200 VOLT, 25 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated Parameter Rating Units 200 35 V A 28 A BVDSS ID @ VGS = 10V, TC = 25°C Drain to Source Breakdown Voltage

MIL-PRF-6106

Abstract: 1061-8916 kda A1 MIL-PRF-6106/27
Contextual Info: SERIES KDA ENGINEERING DATA SHEET RELAY - NONLATCH 3 PST/NO +AUX, 25 AMP All welded construction Contact arrangement Designed to the performance standards of 3 PST configuration with 1 PDT, 2 AMP auxiliary contacts in one inch cube MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS

BAT54W

Contextual Info: Preliminary Data Sheet PD-20641 12/01 BAT54W SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW TJ

marking G SOT323 Transistor

Contextual Info: Preliminary Data Sheet PD-20641 12/01 BAT54W SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW TJ

BAT54CW

Contextual Info: Preliminary Data Sheet PD-20639 12/01 BAT54CW SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW

ECG102A

Abstract: ECG101 audio NPN ECG102 ECG85 ECG92 ecg-105 ECG87MP # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 ECG88
Contextual Info: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BVC bo Description and Application ECG85 NPN-Si, Sw, Gen Purp Amp ECG88 NPN-Si, Hi Gain DC Regulator, 200 Amp Collector To Emitter Volts b v Ceo Base to

Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4ÖS54S2 DD172L4 2fl P D -2.331 International 1N6095 1 n6096 ^ R e c tifie r SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N6095, 1N6096. Units lF AV Rectangular 25* A

22DGQ045

Abstract: MIL-PRF19500
Contextual Info: PD - 20358D 22DGQ045 SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Characteristics Description/Features 22DGQ045 Units IF AV Rectangular Waveform 25 A VRRM (Per Leg) 45 V IFSM @ tp = 8.3ms sine 300 A VF @ 25Apk, T J = 125°C (Per Leg) 0.76 V

Contextual Info: SENSITRON SEMICONDUCTOR 1C914 TECHNICAL DATA DATASHEET 4230, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING