24SEP08 Search Results
24SEP08 Datasheets Context Search
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Contextual Info: June 2009 Rev – 1.1 Photodetector Sensor Board SP1202S03RB User’s Guide 2009 National Semiconductor Corporation. 1 http://www.national.com Table of Contents 1.0 Introduction .3 |
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sp1202s03rb | |
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Contextual Info: RSO Vishay Sfernice Fixed Wirewound Enamelled Corrugated Tape Resistors Very High Dissipation FEATURES • 160 W to 1 kW at 25 °C AN Collars CS Collars The remarkable dissipation power of this series is the result of an original winding method using corrugated edge-wound tape, |
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54any18-jul-08 | |
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Contextual Info: RT Vishay Sfernice Wirewound Rheostats and Potentiometers Characteristics FEATURES RHEOSTAT MODE • 12 W to 500 W at 25 °C • CCTU 05-03B The performance of RT-RTE rheostats exceeds the requirements of specification CCTU 05-03B. They have been designed for heavy duty applications such |
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05-03b18-jul-08 | |
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Contextual Info: RT230 Vishay Sfernice Wirewound Rheostat/Potentiometer FEATURES • 250 W at 25 °C • CCTU 05-03B PA7 • Vitreous style DIMENSIONS in millimeters RT230-PA7 PANEL CUT OUT DETAILS 60 143 ± 3.5 15 50 -0 10 - 0.05 83 Screw M5 Ø 12 75 60° 50 ± 2 2 holes Ø 5.5 |
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rt23005-03brt230-pa7dba10+1 | |
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Contextual Info: 25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor |
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25mt060wfapbfe789962002/95/ec2011/65/eu+1 | |
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Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1088 MHz 4.5 VDC 1144 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -2.0 +2.0 dBm 20 30 mA Supply Current: |
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10khzcrbv55clcrbv55cl-1088-114424-sep-08 | |
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Contextual Info: QD48T033050 DC-DC Converter Data Sheet 36-75 VDC Input; 3.3VDC @ 15A and 5.0VDC @ 10A Outputs The QD48T033050 dual output through-hole mounted DC-DC converter offers unprecedented performance in a quarter brick package by providing two independently regulated high current outputs with total power of 100 W. This is |
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qd48t033050mcd1008324-sep-08 | |
potentiometer spindle
Abstract: 6.8k sfernice potentiometers linear WIREWOUND POTENTIOMETER RT100 sfernice Potentiometer vishay B 103 Potentiometers SFERNICE potentiometer Sfernice Sfernice Linear Potentiometer rheostat
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rt10005-03brt100-pa524-sep-08+10 | |
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Contextual Info: 25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor |
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25mt060wfapbfe789962002/95/ec11-mar-11 | |
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Contextual Info: SL Vishay Sfernice Zero-Ohm Strap Resistors FEATURES • Resistive element made with high stability film allowing low end resistance and high current through resistance. • Color band marking for ease of identification after mounting • Compatible with automatic insertion equipment |
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18-jul-08 | |
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Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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20mt120ufapbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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20mt120ufpe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 457 MHz 3.5 VDC Lower Frequency: Upper Frequency: 468 Tuning Voltage: 1.5 Supply Voltage: 4.75 5.0 5.25 VDC +3.0 +6.0 dBm Output Power: Supply Current: MHz 15 nd |
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100khzcrbv55clcrbv55cl-0457-046824-sep-08 | |
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Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier |
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20mt060kfe789962002/95/ec2011/65/eu+1 | |
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Contextual Info: VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft |
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vs-20mt120ufapbfe7899625electronic2002/95/ec+3 | |
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Contextual Info: VS-20MT060KF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier |
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vs-20mt060kfe789962002/95/ec2011/65/eu+2 | |
TRANSISTOR s838
Abstract: ssd2119 cd 6283 cs single output circuit diagram sdc 7500 pwm control s170 TRANSISTOR sdc 7500 sdc 339 PWM S262 C10 ta 9690 gn transistor marking s728
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cfaf320240f-tcom/product/cfaf320240ft2010/07gainst2002/95/ec+11 | |
SSD2119
Abstract: TRANSISTOR C 6090 EQUIVALENT SM 630 finger print module code marking s47 m 9630 12 pin zif connector 0.5mm FPC MARKING CODE BB1 CFAF320240F-T TRANSISTOR MARKING CODE S85 s551
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cfaf320240f-t-tscom/product/cfaf320240ftts2002/95/ecsj/t11364-2006+10 | |
sdc 7500 pwm control
Abstract: SSD2119 sdc 7500 pwm SSD2119 application note ta 9690 gn sdc 7500 SSD2119Z7 s609 transistor transistor marking s728 sdc 339 PWM
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cfaf320240f-tcom/product/cfaf320240ft2010/07gainst2002/95/ec+11 | |
potentiometer 4k7
Abstract: sfernice 78 potentiometer RT55
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05-03brt55-pa318-jul-08potentiometer 4k7+2 | |
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Contextual Info: RT12 Vishay Sfernice Wirewound Rheostat/Potentiometer FEATURES • 12 W at 25 °C • CCTU 05-03B PA9 • Vitreous style DIMENSIONS in millimeters PANEL CUT OUT DETAILS RT12-PA9 Ø 22.5 ± 1.5 17 2 M6 x 0.75 6.5 ± 0.5 Ø 1.1 MIN 15.5 Ø 3.5 -0 Ø 3 - 0.05 |
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05-03brt12-pa918-jul-08 | |
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Contextual Info: 25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor |
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25mt060wfapbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: VS-20MT120UFP www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft |
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vs-20mt120ufpe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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20mt120ufapbfe789962002/95/ec11-mar-11 | |