24MAY2004 Search Results

SD1274-01

Abstract: M113 F136
Contextual Info: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for

M50FLW080

Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

JESD97

Abstract: M28W320FCB M28W320FCT
Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns

Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Features „ Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) FBGA TFBGA47 (ZB) 6.39 x 6.37mm

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC FT RESERVED. D I ST REV I S I O N S LTR DE S C R I P T I O N DWN DATE R E L E A S E D EC OG 3 B - 0 3 2 6 - 0 3 R E V I S E D EC 0 G 3 B - 0 3 9 0 - 0 4

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS LOC RESERVED. RE V I S I O N S D I ST FT LTR DE S C R I P T I O N R E L E A S E D EC OG 3B - 0 3 2 6 - 0 3 R E V I S E D EC 0 G 3 B - 0 0 3 8 - 0 4

JESD97

Abstract: M28W320FCB M28W320FCT M28W320
Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Features • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns

FB600

Abstract: M50FLW080 M50FLW080A M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

M28W320FCB

Abstract: JESD97 M28W320FCT
Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Features • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R|3 H T S LOC D I ST REV I S I O N S FT RESERVED. LTR DE S C R I P T I O N DWN DATE R E L E A S E D EC OG 3 B - 0 36 2 - 0 3 R E V I S E D EC 0 G 3 B - 0 3 9 0 - 0 4

Contextual Info: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION 20 LO C RESERVED. DIST RE V ISIONS FT LTR DESCRIPTION R E V I S E D EC 0 G 3 B - 0 3 2 6 - 03 R E V I S E D EC 0 G 3 B - 0 3 9 0 - 04 R E V I S E D ECO- 06 - 0 3 0 0 3 9

A0-A21

Abstract: JESD97 M28W640FCB M28W640FCT TFBGA48 AI04389
Contextual Info: M28W640FCT M28W640FCB 64 Mbit 4Mbx16, Boot Block 3V Supply Flash memory Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access times: 70, 85, 90,100ns

m28w640fcb

Contextual Info: M28W640FCT M28W640FCB 64 Mbit 4Mbx16, Boot Block 3V Supply Flash memory Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access times: 70, 85, 90,100ns

FB02002

Abstract: FB130
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

8849h

Abstract: TSOP48 outline A0-A21 J-STD-020B M28W640FCB M28W640FCT TFBGA48
Contextual Info: M28W640FCT M28W640FCB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional)

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION LOC R|3 H T $ R E S E R V E D . D I ST REV I S I O N S FT NDICATOR LTR DE S C R I P T I O N DWN DATE R E L E A S E D EC OG 3 B -0 3 2 6 - 0 3 I 3J1JN 2 0 0 3

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R | CHTS LOC RESERVED. REV I S I ONS D I ST FT AF I GNME NT DOT, POS I T I VE DE S C R I P T I O N DWN DATE REVISED EC 0 G 3 B - 0 3 2 6 - 0 3 I3JUN2003

Contextual Info: THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV I S I ONS D I ST FT RESERVED. AF I G NME N T DOT. LTR DE S C R I P T I O N R E V I S E D EC 0 G 3 B - 0 3 2 6 - 0 3 R E V I S E D EC 0 G 3 B - 0 3 9 0 - 0 4

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. BY C O P Y RI G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION LOC REV I S I ONS D I ST FT R|3 H T $ R E S E R V E D . LTR DE S C R I P T I O N DWN DATE R E L E A S E D EC OG 3 B - 0 36 2 - 0 3 R E V I S E D EC 0 G 3 B - 0 3 9 0 - 0 4

1746033

Abstract: 6-1717417-0
Contextual Info: TH I S DRAW ING IS COPYRIGHT UNPUBLI SHED. 20 RELEASED BY TYCO ELECTRO N ICS CORPORATION FOR ALL 20 PU BLICATIO N RIGHTS LOC REV I S I O N S D I ST RESERVED. LTR DESCRIPTIO N RELEASED REVISED REVISED T H I S D R A W I N G A N D I N F O R M A T I O N S A R E O W N E D BY T Y C O E L E C T R O N I C S AMP K . K A N D F O R B I D

M50FLW080A

Abstract: M50FLW080 M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8-Mbit 13 x 64-Kbyte Blocks + 3 x 16 × 4 Kbyte Sectors 3-V supply, Firmware Hub / low-pin-count Flash memory Feature summary • ■ ■ ■ ■ ■ Flash memory – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used

Tyco PBT-GF30

Abstract: PBT-GF30 AMP PBT-GF30 PBTGF30 PBT-GF-30 PBTGF-30 PBT ASA-GF30 Tyco 108-18 tyco pbtgf30 ASA-GF30
Contextual Info: 1993 R E L E A S E D FOR P U B L I C A T I O N C O P Y R I G H T 199 3 BY TYCO ELECTRONICS CORPORATION. ALL R|3 H T S USED W ITH: RESERVED. SLIDE 962340/962341 LOC ENOLOCK P O S I T I O N A RE V I S I O N S D I ST LTR NO 52071 13, 4 H1 D WN DATE DE SC R I P T I O N

Contextual Info: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for