24JAN14 Search Results

Contextual Info: F-214 Rev 24JAN14 S1SST–20–28–GF–03.00–D S1SS–20–28–GF–03.00–D (1,00 mm) .03937" S1SS, S1SST SERIES MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SS Insulator Material: Nylon Contact Material:

Contextual Info: VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to

Contextual Info: VSMB10940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB10940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with

RR1005

Contextual Info: TNPW www.vishay.com Vishay Lead Pb -Bearing High Stability Thin Film Chip Resistors FEATURES • Metal film layer on high quality ceramic • SnPb termination plating, Pb content > 6 % • Excellent overall stability at different environmental conditions  0.05 % (1000 h rated power at 70 °C)

Contextual Info: VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to

WSBM8518

Contextual Info: WSBM8518 www.vishay.com Vishay Dale Power Metal Strip Battery Shunt Resistor W/Molded Enclosure Very Low Value 100  FEATURES • High power to resistor size ratio • Proprietary processing technique extremely low resistance values produces • All welded construction

Contextual Info: VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well MQW technology with