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251C Abstract: CEM8435A Contextual Info: March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V, -7.9A, R ds on =24itiQ R ds(on)=40itiQ @Vgs=-1 0V. @Vgs=-4.5V. D D D • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.	OCR Scan	cem8435a 40itiq 251c	PDF

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251C

Abstract: CEM8435A
Contextual Info: March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V, -7.9A, R ds on =24itiQ R ds(on)=40itiQ @Vgs=-1 0V. @Vgs=-4.5V. D D D • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.

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cem8435a 40itiq 251c

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