24SEP03 Search Results

JG code

Abstract: tyco Amp date code format
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT E RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. REVISIONS GP 0 ELECTRONICS CORPORATION. oo - DESCRIPTION-Y REVISED PER EC OS13 - 0 2 3 8 - 0 3 24SEP03 JG CC MATERIAL: 54.94

VTH160

Abstract: VTH175 atmel 2947
Contextual Info: Features • Monolithic Power Supply, Temperature Independent Voltage Reference Generator with 4-bit Trimming Capability 15 Correction Steps of ± 0.45% 8 Up, 7 Down Four Reference Voltages: 0.2 V, 1.28 V, 1.64V, 1.79 V, 2.86 V Power Supply Requirement: avdd = 3.1 V ± 100 mV

ASTM-B139

Abstract: ASTM-D-3220 QQ-S-365 40601 QQ-Z-363 ASTM-B-139
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT E 2 3 RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. 0 ELECTRONICS CORPORATION. 1 REVISIONS AJ - DESCRIPTION-REV PER EC 0S1 4 - 0 1 4 7 - 0 3 ZINC -4 .8 3 ± 0 .6 4 [. 1 9 0 ± . 0 2 5 ]

749374-1

Abstract: tyco Amp date code format
Contextual Info: RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. 0 ELECTRONICS CORPORATION. GP REVISIONS 00 - DESCRIPTION-K REVISED PER EC OS1 3 - 0 1 4 7 - 0 3 16.30+0.19 © © 1 Y W,;0 ® ® ® © 7 / \V©©©©©7/ 2 5 .0+ 0 .2 5

Contextual Info: Features • System Peripheral to Manage all Slaves of the AMBA Advanced System Bus • ASB Control Signals Decoder Providing Selection for: • • • • • – Up to Eight External 256-Mbyte Memory Areas – Up to Four Internal 1-Mbyte Memory Areas

amphenol 74868

Abstract: 31-71043-1 Amphenol TP
Contextual Info: R E V 1S I O N S 3 1 - 7 1 0 4 3 - 1 NOTES: I M A T E R I A L S AND F I N I S H E S : BODY - N I C K E L PLA T E D Z I N C D I E CAST C E N T E R C O N T A C T - GOL D P L A T E D P HOS P HOR B RON Z E I N S U L A T O R - PE MOUNTI NG P I N S - T I N P L A T E D BRASS

Si4336DY

Contextual Info: SPICE Device Model Si4336DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

VTH160

Abstract: VTH175
Contextual Info: Features • • • • • Battery Monitor with Two Threshold Voltages: 1.6 V and 1.75 V System Reset and Shut Down Internally Provoked or Requested by an External Device Fully Asynchronous State Machine Performing Overall Power Management Control Low Consumption for Permanent Battery Monitoring ICC, typ µA100 at AVDD! = 3.1 V

Diode Capacitance

Contextual Info: BAT15V-02V VISHAY Vishay Semiconductors Schottky Diodes Description Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD523 package is a contribution to the continuously growing integration density