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    24N60C5 Search Results

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    24N60C5 Price and Stock

    IXYS Corporation

    IXYS Corporation IXKP24N60C5

    Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXKP24N60C5 1
    • 1 $6.88
    • 10 $5.48
    • 100 $4.92
    • 1000 $4.92
    • 10000 $4.92
    Get Quote

    IXYS Corporation IXKP24N60C5M

    Transistor: N-MOSFET; unipolar; 600V; 8.5A; TO220FP; 390ns
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXKP24N60C5M 1
    • 1 $3.61
    • 10 $2.58
    • 100 $2.58
    • 1000 $2.58
    • 10000 $2.58
    Get Quote

    IXYS Corporation IXKH24N60C5

    Transistor: N-MOSFET; unipolar; 600V; 24A; 250W; TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXKH24N60C5 1
    • 1 $4.16
    • 10 $3.30
    • 100 $2.97
    • 1000 $2.97
    • 10000 $2.97
    Get Quote

    24N60C5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C4080

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET


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    24n60c5mo-22020070704ac4080 PDF

    Contextual Info: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    24n60c5mo-220 PDF

    Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    24n60c5mo-22020090209d PDF

    Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information ID25 = 24 A = 600 V VDSS RDS on max = 0.165 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


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    24n60c5o-247o-220 PDF

    DSA003710

    Abstract: MA660
    Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


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    24n60c5o-247o-22020070625a+2dsa003710ma660 PDF

    IXKP24N60C5M

    Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    24n60c5mo-22020080523cixkp24n60c5m PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET


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    24n60c5mo-220 PDF

    24N60C5

    Abstract: ixkh24n60c5 IXKP24N60C5 K 739 mosfet
    Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S


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    24n60c5o-247o-22020080523c+3ixkh24n60c5ixkp24n60c5k 739 mosfet PDF

    Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D


    Original
    24n60c5o-247o-22020080523c PDF

    Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    24n60c5mo-22020090209d PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET


    Original
    24n60c5mo-220 PDF

    Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


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    24n60c5o-247o-22020070625a PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF