24N60C Search Results

24N60C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
24N60C3		Infineon Technologies		Original	PDF	232.93KB	10

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Rochester Electronics LLC SPP24N60CFD N-CHANNEL POWER MOSFET
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DigiKey	SPP24N60CFD	Bulk	500		109	1 - 10 - 100 - 1000 $2.75 10000 $2.75	Buy Now
Infineon Technologies AG SPW24N60C3FKSA1 MOSFET N-CH 650V 24.3A TO247-3
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DigiKey	SPW24N60C3FKSA1	Tube	318		1	1 $6.08 10 $6.08 100 $3.46 1000 $2.89 10000 $2.89	Buy Now
Avnet Americas	SPW24N60C3FKSA1	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $2.41 10000 $2.38	Buy Now
Newark	SPW24N60C3FKSA1	Bulk			1	1 $6.08 10 $5.21 100 $3.17 1000 $2.89 10000 $2.89	Buy Now
Infineon Technologies AG SPP24N60C3XKSA1 MOSFET N-CH 650V 24.3A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP24N60C3XKSA1	Tube	13		1	1 $4.71 10 $4.71 100 $2.05 1000 $2.00 10000 $2.00	Buy Now
Avnet Americas	SPP24N60C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.93 10000 $1.83	Buy Now
Mouser Electronics	SPP24N60C3XKSA1		331			1 $4.62 10 $4.55 100 $2.36 1000 $2.00 10000 $2.00	Buy Now
Newark	SPP24N60C3XKSA1	Bulk	698		1	1 $4.62 10 $4.55 100 $2.35 1000 $2.08 10000 $2.08	Buy Now
Rochester Electronics	SPP24N60C3XKSA1		1,468		1	1 - 10 - 100 $2.00 1000 $1.79 10000 $1.68	Buy Now

Rutronik	SPP24N60C3XKSA1	Tube	500		50	1 - 10 - 100 $2.93 1000 $2.40 10000 $2.40	Buy Now
IBS Electronics	SPP24N60C3XKSA1				500	1 - 10 - 100 - 1000 $4.55 10000 $4.48	Buy Now
IXYS Corporation IXGH24N60C IGBT 600V 48A TO-247AD
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DigiKey	IXGH24N60C	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGR24N60C IGBT 600V 42A ISOPLUS247
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DigiKey	IXGR24N60C	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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24N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH24N60CD1 Abstract: ISOPLUS247 Contextual Info: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	24N60CD1 ISOPLUS247TM IXGH24N60CD1 ISOPLUS247	PDF
C4080 Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET	Original	24N60C5M O-220 20070704a C4080	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 24N60C IC110 E153432	PDF
24N60CD1 Abstract: IXGH24N60CD1 Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	24N60CD1 IC110 O-268 O-247 IXGH24N60CD1	PDF
Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	24N60CD1	PDF
Contextual Info: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	24N60C5M O-220	PDF
Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	24N60C ISOPLUS247TM IC110 728B1	PDF
Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	24N60C5M O-220 20090209d	PDF
D1488 Contextual Info: IZ IJ X Y S HiPerFAST IGBT Lights peed™ Series IXGH 24N60C IXGT 24N60C V CES ^C25 V CE sat typ * fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	24N60C Cto150Â 13/10Nm/lb O-247 O-268 D1488	PDF
Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	24N60CD1 IC110 O-268 O-247	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGR 24N60CD1 VCES = 600 V IC25 = 42 A VCE sat = 2.5 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data ISOPLUS 247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	ISOPLUS247TM 24N60CD1 O-247 IXGH24N60CD1	PDF
Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information ID25 = 24 A = 600 V VDSS RDS on max = 0.165 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)	Original	24N60C5 24N60C5 O-247 O-220	PDF
DSA003710 Abstract: MA660 Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	24N60C5 O-247 O-220 20070625a DSA003710 MA660	PDF
24N60 Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	24N60C ISOPLUS247TM IC110 E153432 728B1 24N60	PDF

ge motor 752 Contextual Info: v CES IXGH 24N60C IXGT 24N60C HiPerFAST IGBT Lightspeed™ Series ^C25 VCE sat typ t.t fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES V CGR T j = 25° C to 150° C 600 V T j = 25° C to 150° C; RGE = 1 m î î	OCR Scan	24N60C 24N60C O-268 O-247 ge motor 752	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET	Original	24N60C5M O-220	PDF
24N60C Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 24N60C IXGT 24N60C VCES IC25 VCE sat typ tfi typ = 600 V = 48 A = 2.1 V = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES	Original	24N60C IC110 O-268 O-247 O-268AA 24N60C	PDF
24N60C5 Abstract: ixkh24n60c5 IXKP24N60C5 K 739 mosfet Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S	Original	24N60C5 O-247 O-220 20080523c 24N60C5 ixkh24n60c5 IXKP24N60C5 K 739 mosfet	PDF
24N60CD1 Abstract: diode p1000 Contextual Info: DIXYS HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 VCES ^C25 V CE sat = 600 V = 48 A = 2.5 V P relim inary data sheet Symbol Test Conditions V „„ Tj = 25° C to 150° C 600 V 600 V Continuous ±20 V Transient ±30 V Tc = 25° C	OCR Scan	24N60CD1 24N60CD1 O-268 O-247 diode p1000	PDF
Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D	Original	24N60C5 O-247 O-220 20080523c	PDF
24N60C Abstract: 98936 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 24N60C IXGP 24N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C	Original	24N60C IC110 O-220 O-263 728B1 24N60C 98936	PDF
Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	24N60C5M O-220 20090209d	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET	Original	24N60C5M O-220	PDF
Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	24N60CD1 IC110 O-268 O-247	PDF

24N60C Search Results

24N60C Datasheets (1)

24N60C Price and Stock

Rochester Electronics LLC SPP24N60CFD

Infineon Technologies AG SPW24N60C3FKSA1

Infineon Technologies AG SPP24N60C3XKSA1

IXYS Corporation IXGH24N60C

IXYS Corporation IXGR24N60C

24N60C Datasheets Context Search

IXGH24N60CD1

C4080

24N60CD1

D1488

DSA003710

24N60

ge motor 752

24N60C

24N60C5

24N60CD1

24N60C