23OCT08 Search Results

BFC2 043

Abstract: capacitor 0.22 k 63 MKT MKT 334
Contextual Info: MKT 365, MKT 366, MKT 367 Vishay BCcomponents DC Film Capacitors MKT Radial Lacquered Type FEATURES 365, 366 Kinked Leads Available taped and loose in box RoHs compliant w l APPLICATIONS Blocking and coupling, bypass and energy reservoir. h Seating plane 1

DIP-10

Abstract: optotriac
Contextual Info: VO3526 Vishay Semiconductors Power Phototriac FEATURES • Maximum trigger current IFT : 10 mA Pin 2 3 4 5 6 7 9, 13 11 15 Function LED anode LED cathode N/C N/C N/C N/C Triac T2 Triac T1 Triac gate 15 2 3 • Isolation test voltage 5300 VRMS • Peak off-state voltage 600 V

Atmel MARKING CODE

Abstract: JESD97 Classification E3 JEDEC20C AT90M 90M19236RU atmel package marking JEDEC TRAY DFN8 atmel lot marking eeprom AT90M25672RU atmel lot marking
Contextual Info: Introduction The new U SIM s ecure products AT 90M19236RU, AT90M25672RU and AT90M288144RU for cellular Machine-to-Machine (M2M) communications modules introduced by ATMEL target 32K, 64K and 128K segments respectively. Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture

Contextual Info: MKT 467, 468, 469 Vishay BCcomponents DC Film Capacitor MKT Radial Lacquered Type FEATURES 467 Available taped and loose in box RoHs compliant w l APPLICATIONS Blocking and coupling, bypass and energy reservoir. h Seating plane 1 REFERENCE STANDARDS α IEC 60384-2

SQD50N06-09L

Contextual Info: SQD50N06-09L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0093 ID (A) Configuration RoHS • Package with Low Thermal Resistance

81559

Abstract: SQ9945AEY-T1 SQ9945AEY-T1-E3 SQ9945AEY 74499
Contextual Info: SQ9945AEY Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 0.080 ID (A) ± 3.7 AEC-Q101 RELIABILITY Configuration Dual • Passed all AEC-Q101 Reliability Testing D2 D1 SO-8

SQM110N05-06L

Contextual Info: SQM110N05-06L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 55 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.006 ID (A) Configuration RoHS • Package with Low Thermal Resistance

KC3 SOT23

Abstract: MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
Contextual Info: WEITRON MMBZ5221B Series Surface Mount Zener Diode SMALL SIGNAL ZENER DIODES 300m WATTS P b Lead Pb -Free Features: * 350mW power dissipation on FR-4 PCB. * General purpose, Medium Current. 3 1 2 SOT-23 2 1 3 SOT-23 Outline Dimensions Unit:m m Dim A B C D

phototriac

Abstract: DIP-10 vo3526
Contextual Info: VO3526 Vishay Semiconductors Power Phototriac FEATURES • Maximum trigger current IFT : 10 mA Pin 2 3 4 5 6 7 9, 13 11 15 Function LED anode LED cathode N/C N/C N/C N/C Triac T2 Triac T1 Triac gate 15 2 3 • Isolation test voltage 5300 VRMS • Peak off-state voltage 600 V

capacitor 0.01 k 630 MKT

Abstract: MKT 373 EB capacitor 373 MKT length 0.068 MF CAPACITOR MKT GF500 GL-300 capacitor MKT capacitor 0.022 k 630 MKT pitch 15 capacitor 0.015 k 400 MKT
Contextual Info: MKT 373 M Mini Vishay BCcomponents DC Film Capacitor MKT Radial Potted Type l FEATURES w RoHS compliant 10 mm to 27.5 mm laed pitch Supplied loose in box, taped on ammopack or reel h ENCAPSULATION Flame retardant plastic case and epoxy resin (UL-class 94 V-0)

AT90SCR100

Abstract: ISO7816-12 SCR100L Programming Bootloader at90scr100 At90scr ISO-7816-12 ISO7816-1 OCXX TPSE106-035-200 pcb sms controller
Contextual Info: General Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • – 131 Powerful Instructions - Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Up to 16MIPS Throughput at 16Mhz

Contextual Info: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0035 ID (A) Configuration RoHS • Package with Low Thermal Resistance

LS4150

Abstract: LS4150-GS08 quadroMELF
Contextual Info: LS4150 Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • • • Silicon epitaxial planar diode Low forward voltage drop e2 High forward current capability QuadroMELF package Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: SQ4936EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.036 ID (A) Configuration RoHS • Package with Low Thermal Resistance

SQM85N10-10

Abstract: SQM85N10-10-GE3 Vishay
Contextual Info: SQM85N10-10 Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 100 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0105 ID (A) Configuration RoHS • Package with Low Thermal Resistance

SQ4401DY-T1-GE3

Contextual Info: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free - 40 RDS(on) (Ω) at VGS = 10 V 0.014 ID (A) - 8.7 Configuration • TrenchFET Power MOSFET COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing

Contextual Info: SQD40N04-10A Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration COMPLIANT Single AEC-Q101 RELIABILITY • Passed all AEC-Q101 Reliability Testing

SQD50N03-09

Contextual Info: SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 30 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.010 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-252

SQD25N15-52-GE3

Contextual Info: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 150 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0052 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-252

Contextual Info: SQM110N04-03 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0028 ID (A) Configuration RoHS • Package with Low Thermal Resistance

capacitor 0.47 j 100 MKT

Abstract: capacitor 0.022 k 630 MKT pitch 15 capacitor 0.022 k 630 MKT capacitor 0.01 j 400 MKT 680nf
Contextual Info: MKT 1820 Vishay Roederstein DC Film Capacitor MKT Radial Potted Type FEATURES Dimensions in millimeters l max. Marking W H 10 mm to 27.5 mm lead pitch. Supplied loose in box, taped on reel RoHS compliant ENCAPSULATION 0.6 Plastic case,epoxy resin sealed, flame retardant

capacitor 400 MKT

Abstract: BFC2370 55nF
Contextual Info: MKT 370 Vishay BCcomponents DC Film Capacitor MKT Radial Potted Type l FEATURES w Available taped and loose in box RoHS compliant ENCAPSULATION h Flame retardant plastic case and epoxy resin UL-class 94 V-0 lt CLIMATIC TESTING CLASS ACC. TO IEC 60068-1 P ± 0.3

arm processor

Abstract: ntrst AT91SAM
Contextual Info: Features • System Peripheral to Facilitate Debug of Atmel ARM®-based Systems • Composed of Four Functions • • • • – Two-pin UART – Debug Communication Channel DCC Support – Chip ID Registers – ICE Access Prevention Two-pin UART – Implemented Features are USART Compatible

24C02 wp st

Abstract: CAT24AA01
Contextual Info: CAT24AA01, CAT24AA02 1-Kb and 2-Kb I2C CMOS Serial EEPROM DESCRIPTION FEATURES 2 „ Supports Standard and Fast I C Protocol The CAT24AA01/24AA02 are 1-Kb and 2-Kb CMOS Serial EEPROM devices internally organized as 128x8/256x8 bits. „ 1.7 V to 5.5 V Supply Voltage Range