23JUN2006 Search Results

Contextual Info: ąą TL1451A-Q1 DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SGLS304 − JUNE 2005 D Qualification in Accordance With D D D D D D D D D D D PW PACKAGE TOP VIEW AEC-Q100(1) Qualified for Automotive Applications Customer-Specific Configuration Control

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

JESD97

Abstract: STGD7NB60K STGD7NB60KT4 STGP7NB60K
Contextual Info: STGD7NB60K STGP7NB60K N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH IGBT General features VCES VCE sat Max @25°C IC @100°C STGD7NB60K 600V < 2.8V 7A STGP7NB60K 600V < 2.8V 7A Type 3 • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat)

full converter 3 phase

Abstract: LD01 PXA270 TPS65023 TPS65023RSB TPS65023RSBR TPS65023RSBT VLCF4020-2R2 RESISTOR 10R 0.1
Contextual Info: TPS65023 www.ti.com SLVS670A – JUNE 2006 – REVISED JUNE 2006 POWER MANAGEMENT IC FOR LI-ION POWERED SYSTEMS • • • • • • • • • • • • • • • 1.5 A, 97% Efficient Step-Down Converter for Processor Core VDCDC1 1.2 A, Up to 95% Efficient Step-Down

Contextual Info: TAS5066 TM SixĆChannel Digital Audio PWM Processor Data Manual January 2004 DAV Digital Audio/Speaker SLES089 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

JESD97

Abstract: STRH60N20FSY3 25C312
Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

GP7NB60

Abstract: GD7N JESD97 STGD7NB60K STGD7NB60KT4 STGP7NB60K
Contextual Info: STGD7NB60K STGP7NB60K N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH IGBT General features VCES VCE sat Max @25°C IC @100°C STGD7NB60K 600V < 2.8V 7A STGP7NB60K 600V < 2.8V 7A Type 3 • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat)

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

ST72561-Auto

Abstract: LQFP32 LQFP44 LQFP64 ST72561 128X64
Contextual Info: ST72561-Auto 8-BIT MCU FOR AUTOMOTIVE WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, LINSCI , ACTIVE CAN • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices

F25NM60N

Abstract: P25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N W25NM60N 850mj
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

TEC 12715

Abstract: 8 pin JRC 2072 LQFP44 0047H 1832A JRC 2041 LQFP32 LQFP64 ST72561 ST72561-Auto
Contextual Info: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

Contextual Info: STOD2540 PMOLED display power supply Feature summary • Inductor switcher boost controller. ■ PFM mode control. ■ High efficiency over wide range of load 1mA to 40mA . ■ Integrated Load disconnect switch. ■ Over voltage protection with automatic restart

mark code e4 diode

Contextual Info: TMS320C6713B FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SPRS294A − OCTOBER 2005 − REVISED NOVEMBER 2005 D Highest-Performance Floating-Point Digital D D D D D D Signal Processor DSP : TMS320C6713B − Eight 32-Bit Instructions/Cycle − 32/64-Bit Data Word

Contextual Info: TAS5026 SixĆChannel Digital Audio PWM Processor Data Manual November 2002 DAV Digital Audio/Speaker SLES041B IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: TL16C750 ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH 64-BYTE FIFOs AND AUTOFLOW CONTROL SLLS191C – JANUARY 1995 – REVISED DECEMBER 1997 D D D D D D D D D D D D D Pin-to-Pin Compatible With the Existing TL16C550B/C Programmable 16- or 64-Byte FIFOs to Reduce CPU Interrupts

Contextual Info: STOD2540 PMOLED display power supply Features • Inductor switches boost controller ■ PFM mode control ■ High efficiency over wide range of load 1 mA to 40 mA ■ Integrated load disconnect switch ■ Over voltage protection with automatic restart ■

max4170

Contextual Info: STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH60N20FSY3 200V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

P25NM60N

Abstract: W25NM60N STF25NM60N
Contextual Info: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω

Contextual Info: STSJ80N4LL N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LL 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

gd7nb60k

Contextual Info: STGD7NB60K STGP7NB60K N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH IGBT General features VCES VCE sat Max @25°C IC @100°C STGD7NB60K 600V < 2.8V 7A STGP7NB60K 600V < 2.8V 7A Type 3 • High input impedance (voltage driven) ■ Low on-voltage drop (vcesat)

fps200

Abstract: ST72F561R9TA IC302 nf 52 ar BOSCH DOCUMENTS ST7 ICC Family OSC23 bosch 0 265 005 265
Contextual Info: ST72561-Auto 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, LINSCI , ACTIVE CAN • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

JESD97

Abstract: STSJ80N4LLF3
Contextual Info: STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

STGW30NC120HD

Abstract: GW30NC120HD JESD97
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)