23JAN10 Search Results

Contextual Info: i R E V IS IO N S see p LTR DESCRIPTION DATE DWN APVD I _ F REVISED 27FEB08 S.M F1 REVISED PER E C O -10 -0 0 0 4 4 3 23JAN10 KK HMRl D + 0.4 9 ^ SECT ”A ” —” A ” C ) i 1 . iiffl a 0 v > 0^# : 2. mmj r v T - t m# : 909101 -2 3. NOTES 1 . HOUSING P / N : 1 7 4 7 7 9 - 1

XP1017-BD

Abstract: P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1
Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD January 2010 - Rev 23-Jan-10 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS R E V IS IO N S 50 R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N REVISED