237 PHOTOTRANSISTOR Search Results

HOA1180

Abstract: HOA1180-001 HOA1180-002 HOA1180-003 SD1410 SD1440 SE1450 h237
Contextual Info: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting

Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A W esentliche M erkmale Features • • • • • • • • Preisgünstiges Kunststoffgehäuse Sidelooker Hohe Empfindlichkeit Passend zu IRED IRL 80 A, IRL 81 A Low cost plastic package

HOA1180-003

Abstract: HOA1180-001 HOA1180 HOA1180-002 SD1410 SD1440 SE1450 infra red emitter
Contextual Info: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting

foto transistor

Abstract: foto transistor BPX circuit Q62702-P20 Q62702-P43-S2 Q62702-P43-S3
Contextual Info: BPX 81 BPX 81 feo06021 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm

feo06021

Abstract: Q62702-P20 Q62702-P43-S2 Q62702-P43-S3
Contextual Info: BPX 81 BPX 81 feo06021 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm

HOA1180

Abstract: SE1450 HOA1180-001 HOA1180-002 HOA1180-003 SD1410 SD1440
Contextual Info: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting

ir proximity sensor motion

Abstract: reflective sensor 4 pin
Contextual Info: Miniature SMD Reflective Sensor OPR5005 Features: • • • • High temperature operation Surface mountable Compact size Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a hightemperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective

motion sensor light switch

Abstract: OPR5005 ir sensor smd ir proximity sensor motion
Contextual Info: Miniature SMD Reflective Sensor OPR5005 Features: • • • • High temperature operation Surface mountable Compact size Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a hightemperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective

telefunken em 800

Abstract: Telefunken u 237 fll100
Contextual Info: a^EOCHb DOD?ôbtî M • AL6G T czr 8000 •T czr so o i TnKLifFMtMKdKl electronic Creative Technologies Matchable Pairs-Emitter and Detector Construction: Emitter: GaAs-IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor 80?0 and XCZjf.aqjÇJ

transistor smd uw

Abstract: OPR5200 OPR5500
Contextual Info: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip

transistor smd uw

Abstract: smd transistor 5c transistor uw 5c smd transistor
Contextual Info: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip

Contextual Info: r = 7 S G S -T H O M S O N KilD»IIL[ilgTms «i L6515 DUAL DC-MOTOR POSITIONING SYSTEM ADVANCE DATA • P R E C ISE O P ER A TIO N A L S O C O S T O PTICA L EN C O D ER W IT H LO W MULTIPOWER BCD TECHNOLOGY ■ PW M - O U T P U T F O R D IG ITA L SW ITC H E D

transistor smd uw

Contextual Info: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip

PT460

Abstract: PT460F DLA9 PT461 PT465F c125t
Contextual Info: PT460/PT460F/PT461 /PT461 F/PT465F PT460/PT460F/PT461 PT461 F/PT465F Duble-end Type Phototransistor • Features ■ Outline Unit : mm Dim-ns 1. Compact double-end type package 2. Taping package (2 000Pcs. /reel) (PTX X X T ) 3. Visible light cut-off type

Contextual Info: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.

CNX62

Abstract: BS415 DDS1015
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.

H0A1180

Abstract: A1180-003 Honeywell LLE
Contextual Info: HOA1180 Reflective Sensor FEA TU R E S . C hoice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm ) min. 28 AW G PVC insulated wire leads DES C R IPTIO N The H O A 1 180 series consists of an infrared em itting

CNX62

Abstract: BS415 sot174
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.

K3020P

Abstract: K3021 K3023 K3022P 94vo diagram K3021P
Contextual Info: Temic K3020P G Series S e m i c o n d u c t o r s Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

Contextual Info: TCED1100 G up to TCED4100 Vishay Telefunken T Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse­ nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

741S

Contextual Info: I I f l M f l M l l T n i l TECHNICAL DATA MINIATURE PHOTOTRANSISTOR S2829 T h e S 2 8 2 9 is a high s e n s itiv ity p h o to tra n s ito r m o ld e d w ith h ig h q u a lity v is ib le -c u t e p o x y re s in into a s u b m in ia tu re s iz e of 1.6 x 3 .5 x 1.3 m m . It is 1/2 to 1 /3 in s iz e a n d w e ig h t of th e

Contextual Info: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse­ nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

pin diagram of IC 7402

Abstract: IC 7402 pin diagram 4 pin optocoupler CI 7402 TCED4100 IC 7402 TCED1100 TCED1100G TCED2100 ED1100
Contextual Info: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.