236F Search Results

HM628512

Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 5 12-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,

HM628512LP-7A

Contextual Info: ADE-203-236F Z HM628512 Series 524,288-word x 8-bit High Speed CMOS Static RAM HITACHI The Hitachi HM628512 is a 4M -bit static RAM organized 512-kword x 8-bit. It realizes higher d e n sity , h ig h e r p e rfo rm a n ce and low pow er consum ption by em ploying 0.5 pm Hi-CM OS

HM628512 RAM

Abstract: HM628512LFP-7SL 236f HM628512LFP-5 HM628512LFP-7 HM628512 HM628512FP-5 HM628512LP-5 HM628512LP-5SL HM628512LP-7
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The

02-09-1102

Abstract: 02-09-1104 MOLEX 160 02-09-5147 02-09-5132 236ftm 02-09-1117 02-09-1203 02-09-1144
Contextual Info: MOLEX - - 2.36mm .093" Diameter Female Terminals - Page 1 of 2 2.36mm (.093") Diameter Female Terminals Above Drawing For Reference Only Ordering Information Type Plating Crimp Wire Size 14-20 18-22 http://www.molex.com/product/power/236ftm.html Top Insulation

Hitachi DSA00776

Abstract: HM628512LFP-7SL HM628512 HM628512FP-5 HM628512LP-5 HM628512LP-5SL HM628512LP-7 HM628512LP-7A HM628512LP-7SL HM628512P-5
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology.

ZUA13

Abstract: HM628512LFP-7SL
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 |J.m Hi-CMOS process technology. The device,

M628512

Abstract: HM628512LRR-7A
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kwordx 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Xm Hi-CMOS process technology. The

HM628512LFP-7A

Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kwordx 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process technology. The

HM628512

Abstract: 236f HM628512 RAM HM628512LFP-7SL HM628512FP-5 HM628512LP-5 HM628512LP-5SL HM628512LP-7 HM628512LP-7A HM628512LP-7SL
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The device,

22V10D

Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military

CY37064

Contextual Info: UltraLogic 64-Macrocell ISR™ CPLD — ts = 3.5 ns Features — tCo = 4 -5 ns • Product-term clocking 64 macrocells in four logic blocks In-System Reprogrammable™ ISR™ • IEEE 1149.1 JTAG boundary scan • Programmable slew rate control on individual l/Os

Contextual Info: fax id: 6140 CY7C375Ì :/ C Y P R E S S UltraLogic 128-Macrocell Flash CPLD Features • • • • Functional Description 128 macrocells in eight logic blocks 128 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology

6n81

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS6R06VE3_B2 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS15R06VL4_B2 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: 123452676 89ABCDEFEED598 123456789A6BC3DEF7989A63A38E311 E31139F3B3FE6FA33A3965789E3A9 98!3BC97B89A6F3B637B63"E35FE3#983B3 

Y6W 35

Contextual Info: Technische Information / technical information FP30R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

E43E

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 12 !4C6C"#$%9C 9E792D364538C&&9A29 69!E73D9'C6DC39 !9"7C39 69 2' !4C6C"#$%9EC  '

Contextual Info: D -subm iniature M etal Shell MIL-C-24308 CINCH M 2 4 3 0 8 Series i • ■ ■ ■ ■ ■ Meets all MIL-C-24308 Class G specifications. Offered in Crimp and Poke and Solder Cup and PCB vertical and right-angle. Offered in 9, 15, 25, 37, and 50 position plugs and sockets except right-angle 9 to 37 positions .

M24308/1-3F

Contextual Info: D-subminiature Metal Shell MIL-C-24308 M24308 Series l i Cinch Meets all MIL-C-24308 Class G specifications. Offered in Crimp and Poke and Solder Cup and PCB vertical and right-angle. Offered in 9, 15,25, 37, and 50 position plugs and sockets except right-angle 9 to 37 positions .

Contextual Info: 123245663789ABC77 7 B771615B58851564981 1 1 1 !""1A"7851 1 F7#7"19$1 17658%A51 1 &92192581A964B7961 1 ' A5""561"96#158B147"71 1 F! 151A*#51E185%"92149"58"51 1 !"378EE2#7 1 $1 /51 6521 /B771 61 5B58851 4564981 9%1

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

vga connector 15 pines

Abstract: VT82C596A chipset vt82c693 and vt82c686a processor celeron 400 Mhz SR96 vt82c693 SR90-8D SRDF algorithms SRF 2337 rohs 128X64 graphical LCD screen csc 2323
Contextual Info: ZFRQQHFW H 97 $SROOR3UR0HGLD 0+] 6LQJOH&KLS6ORW6RFNHW3&,1RUWK%ULGJH :LWK,QWHJUDWHG$*3''*UDSKLFV$FFHOHUDWRU DQG$GYDQFHG0HPRU\&RQWUROOHU VXSSRUWLQJ3&3&DQG9&06'5$0 IRU'HVNWRS3&6\VWHPV 5HYLVLRQ

NCL025

Contextual Info: •■■■■■■\fct>cw.-. s a s iâ s ^ 5^” .w s & v PRELIMINARY _ . "T U ltra 3 7 5 1 2 UltraLogic 512-Macrocell ISR™ CPLD Features • • • • • 512 macrocells in 32 logic blocks • In-System Reprogrammable™ ISR™ — JTAG-compliant on-board programming

C3157

Contextual Info: fax id: 6139 CY7C374Ì :/ C Y P R E S S UltraLogic 128-Macrocell Flash CPLD Features Functional Description • 128 macrocells in eight logic blocks • 64 I/O pins • 5 dedicated inputs including 4 clock pins The CY7C374i is an In-System Reprogrammable Complex