235.8 Search Results

R191-094-000

Contextual Info: 8 7 6 232.00 mm [9.134 in] 209.94 mm [8.265 in] D 5 1.7MM [0.067 in] RECESS A 81.94 mm [3.226 in] B 62.00 mm [2.441 in] 40.00 mm [1.575 in] 3 2 1 D 1.00 mm [0.039 in] 90.00 mm [3.543 in] SECTION A-A A ASSEMBLY - TOP VIEW 235.86 mm [9.286 in] 226.18 mm [8.905 in]

LMX-149

Contextual Info: Frequency Mixer LMX-149 Typical Performance Data CONVERSION LOSS dB RF (MHz) 10.0 20.0 145.5 190.6 235.8 326.1 416.4 500.0 551.8 642.1 732.4 822.7 913.0 1000.0 1048.5 1138.8 1229.1 1319.4 1409.7 1500.0 LO (MHz) 40.0 50.0 115.5 160.6 205.8 296.1 386.4 470.0

AN9504

Abstract: intel 8051 Family with internal ADC mcs96 TB329 HI7190 HI7190EVAL HI7191 HI7191IB HI7191IP TB348
Contextual Info: HI7191 TM Data Sheet March 2001 24-Bit, High Precision, Sigma Delta A/D Converter • 20-Bit Resolution with No Missing Code The HI7191 contains a serial I/O port and is compatible with most synchronous transfer formats including both the Motorola 6805/11 series SPI and Intel 8051 series SSR

3a Fuse Pico Fast LF 4A

Abstract: fuse axial fast pico 250 volt 7A LF 5A 250 volt fuse FM08A pico fuse pico fuse 2500 mA CCMR-8 BLF 272 blf 188 KLK Fuses
Contextual Info: Next AXIAL LEAD AND CARTRIDGE FUSES Next AXIAL LEAD AND CARTRIDGE FUSES SUBMINIATURE PICO II Very Fast-Acting Type Fuse ® ® QPL The PICO® II very fast-acting fuse is designed to meet an extensive array of performance characteristics in a spacesaving subminiature package.

SMD 3B

Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
Contextual Info: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)

ic ap 6928

Abstract: sam4l SENSE16 10v regulator 7910 c QFN64 0x400A0000 swdp B-0100 embedded c programming of fibonacci series pulse width modulation tester diagram
Contextual Info: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling

energy tapping identifier wireless data acquisition

Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
Contextual Info: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling

TPCF8402

Contextual Info: TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)

TPCF8301

Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

toshiba f5d

Abstract: TPCF8304
Contextual Info: TPCF8304 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIV TPCF8304 ○ ノートブックＰＣ用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 5.9S (標準)

TPCF8201

Contextual Info: TPCF8201 東芝電界効果トランジスタ シリコンＮチャネルMOS形 U-MOSIII TPCF8201 ○ 携帯電子機器用 単位: mm ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS(ON) = 38 mΩ (標準)

MCV MOSFET

Abstract: TPCF8A01
Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

TPCF8402

Contextual Info: TPCF8402 シリコンP,NチャネルMOS形 U-MOS IV / U-MOS III 東芝電界効果トランジスタ TPCF8402 ○ 携帯電子機器用 単位: mm ○ モータドライブ用 ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

Contextual Info: S C IE N T IF IC / M IN I-C IR C U IT S M TE ]> • 0001363 f iD h flflll 6bE «S C C su rra ce -m o u n r Frequency Mixers LEVEL 7 +7dBm Model LO, up to + 1dBm RF computer-automated performance data t y p i c a l p r o d u c t i o n u n it / fo r d a ta o f o th e r m odels consult fa c to ry

epcos 565-2

Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B57550G0103F000

Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

59014 c 331

Abstract: 18484
Contextual Info: NTCS0603E3.T Vishay BCcomponents SMD 0603, Glass Protected NTC Thermistors FEATURES QUICK REFERENCE DATA PARAMETER VALUE UNIT 2.0K to 100K  ± 1; ± 2; ± 3; ± 5 % 3420 to 4100 K ± 1; ± 3 % Maximum dissipation at 25 °C 125 mW Thermal time constant 

Contextual Info: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

intel 8051 SSR

Abstract: mcs96 AN9504 AN9527 HI7190 HI7191 TB329 TB331 TB348
Contextual Info: HI7191 24-Bit, High Precision, Sigma Delta A/D Converter March 1998 Features Description • 22-Bit Resolution with No Missing Code The Intersil HI7191 is a monolithic instrumentation, sigma delta A/D converter which operates from ±5V supplies. Both the signal and reference inputs are fully differential for maximum flexibility and performance. An internal Programmable Gain

H17190

Abstract: H171901B H171901p dc motor speed control using 5801 microcontroller H 17190
Contextual Info: fC l H A R R IS S E M I C O N D U C T O R H / 7 7 9 24-Bit, High Precision, Sigma Delta A/D Converter March 1998 Features Description • 22-Bit Resolution with No Missing Code The Harris H 17190 is a monolithic instrumentation, sigma delta A/D converter which operates from ±5V supplies. Both the sig­

144971

Abstract: 132167 32E32
Contextual Info: ICS1561A Integrated Circuit Systems, Inc. Differential Output PLL Clock Generator Description Features The ICS1561A is a very high performance monolithic P L L frequency synthesizer. Utilizing IC S's advanced C M O S mixed mode technology, the ICS1561A provides a low cost solution

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SRA-2000 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: SRA-2000 a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and Environmental