230GHZ Search Results

Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability

FHR20X

Abstract: GaAs FET HEMT Chips 0840 057 TM 1628
Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ≤ 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor

Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ² 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor

FMCW Radar

Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
Contextual Info: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: Dielectric Waveguide Filters WDFM 誘電体導波管フィルタ Series WDFM Type WDFMタイプ WDFM type is miniature waveguide filter for high frequency wireless communication about Fixed Wirelwss Access service FWA . This type is SMD and monoblock structure.

ch-1228

Abstract: 0.18um LDMOS BCD6 60Ghz TS16949 STF50 W 9719 to-3 I4003
Contextual Info: COT Manufacturing Services Manufacturing services for Customer Owned Tooling partners www.st.com STMicroelectronics’ manufacturing services for COT partners As a full service foundry provider with the aim of building solid, long-term partnerships, STMicroelectronics offers the experience