2306 MOSFET Search Results

single phase inverters circuit diagram

Abstract: single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI
Contextual Info: Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Benefits of System-oriented IGBT Module Design for High Power Inverters Piotr Luniewski, Uwe Jansen INFINEON TECHNOLOGIES AG Max-Planck-Str. 5 Warstein, Germany Tel.: +2902 / 764 – 2306

2306 mosfet

Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Mosfet

Abstract: SSF2306
Contextual Info: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V

4435 mosfet

Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Contextual Info: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展

n-channel mosfet SOT-23 3a

Abstract: WTC2306 g2ns
Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive

Contextual Info: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE * “G” Lead Pb -Free 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable

Contextual Info: WTC2306 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 5.3 AMPERS 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90mΩ@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive

Contextual Info: ADVANCED P o w er Te c h n o l o g y • APT8075SN 800V 13.0A 0.75Q POWER MOS IV' N -CH A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8075SN

SSM2301

Contextual Info: PROCESS CHANGE NOTIFICATION PCN Number: 040101 Notice Type: Minor Customer Name: General - to all customers Customer Number: Customer Contact: Marketing Part Number: SSM2301 G N through SSM2306(G)N, SS431(G)N, SS432(G0N Notification dated: April 1, 2004 Change Effective date: Implemented January 1, 2004

A102

Abstract: APM2306 J-STD-020A
Contextual Info: APM2306 N-Channel Enhancement Mode MOSFET Features • Pin Description D 30V/3.5A, RDS ON =70mΩ(typ.) @ VGS=5V 3 RDS(ON)=42mΩ(typ.) @ VGS=10V • • • Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Applications

Contextual Info: SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) • TrenchFET Power MOSFET

Contextual Info: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed

Leaded Fixed Wirewound Resistors

Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: SQD50N03-09 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

Contextual Info: SQD50N03-09 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)

Contextual Info: SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) • TrenchFET Power MOSFET

mosfet te 2304

Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

IRF140

Abstract: IRF142 IRF141 IRF143 IFIF141
Contextual Info: Standard Power MOSFETs- IRF140, IRF141, IRF142, IRF143 File N u m b e r Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 24 A and 27 A, 60 V - 100 V rDsiom = 0.085 O and 0.11 Cl N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: SQD50N03-09 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)

transistor b1184

Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K