| SSF2306
Abstract: "battery protection" D2306 
Contextual Info: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V
 | Original
 | SSF2306 
SSF2306
OT-23
OT-23 
180mm 
"battery protection"
D2306 | PDF | 
| Mosfet
Abstract: SSF2306 
Contextual Info: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V
 | Original
 | SSF2306 
SSF2306
OT-23
SSF23
950TYP 
550REF 
Mosfet | PDF |