22R1A Search Results
22R1A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 22R1A Series | Unknown | Basic Transistor and Cross Reference Specification | Scan | 25.4KB | 1 |
22R1A Price and Stock
Schneider Electric RE22R1AMRRELAY TIME DELAY 300HR 8A 250V |
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RE22R1AMR | 46 |
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RE22R1AMR | 25 | 1 |
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RE22R1AMR | 15 | 2 |
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RE22R1AMR | 8 |
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Schneider Electric RE22R1ACMRRELAY TIME DELAY 300HR 8A 250V |
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RE22R1ACMR | Box | 4 | 1 |
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Schneider Electric RE22R1AKMRRELAY TIME DELAY 300HR 8A 250V |
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YAGEO Corporation RWP502FK-13-22R1AAThick Film Resistors - SMD 2.2Wat 22.1 Ohms 22R1 1% AEC-Q200 |
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RWP502FK-13-22R1AA |
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Nachi America PVS-1B-22R1A2-12Piston Pump, Hydraulic, 22cc, Solenoid Cutoff Control |
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PVS-1B-22R1A2-12 | Bulk | 5 Weeks | 1 |
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22R1A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SSM5H16TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings |
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SSM5H16TU | |
SSM5H07TUContextual Info: SSM5H07TU Silicon N Channel MOS Type π-MOSⅣ /Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics |
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SSM5H07TU SSM5H07TU | |
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Contextual Info: SSM5H11TU Silicon N Channel MOS Type U-MOS /Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications • 4.0-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings |
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SSM5H11TU | |
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Contextual Info: SSM5H07TU Silicon N Channel MOS Type -MOS /Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics |
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SSM5H07TU | |
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Contextual Info: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET |
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SSM5G09TU | |
MA851Contextual Info: SSM5H05TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm • Combined Nch MOSFET and Schottky Diode in one package. • Low RDS (ON) and low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics |
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SSM5H05TU 125IBA MA851 | |
SSM5H16TUContextual Info: SSM5H16TU 東芝複合素子 シリコンNチャネルMOS形 + エピタキシャルショットキバリア形 SSM5H16TU ○ DC-DC コンバータ • • • 単位: mm 1.8 V 駆動です。 Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。 |
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SSM5H16TU SSM5H16TU | |
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Contextual Info: SSM5H08TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics |
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SSM5H08TU | |
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Contextual Info: SSM5H11TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications • 4.0-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings |
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SSM5H11TU | |
SSM5H10TU
Abstract: FET PR 32
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SSM5H10TU SSM5H10TU FET PR 32 | |
SSM5H05TUContextual Info: SSM5H05TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm • Combined Nch MOSFET and Schottky Diode in one package. • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET |
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SSM5H05TU SSM5H05TU | |
SSM5G10TUContextual Info: SSM5G10TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • 1.8-V drive • Combines a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Unit: mm |
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SSM5G10TU SSM5G10TU | |
SSM5H01TU
Abstract: Vgs mosfet MOSFET VRM
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SSM5H01TU SSM5H01TU Vgs mosfet MOSFET VRM | |
tns-3
Abstract: SSM5H05TU
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SSM5H05TU tns-3 SSM5H05TU | |
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14ker
Abstract: SSM5H08TU
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SSM5H08TU 14ker SSM5H08TU | |
SSM5H11TUContextual Info: SSM5H11TU シリコンNチャネルMOS形 + エピタキシャルショットキバリア形 東芝複合素子 SSM5H11TU ○ DC-DC コンバータ • • • 単位: mm 4 V 駆動です Nch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。 |
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SSM5H11TU SSM5H11TU | |
SSM5G02TUContextual Info: SSM5G02TU 東芝複合素子 シリコンPチャネルMOS形 U-MOSII + エピタキシャルショットキバリア形 SSM5G02TU ○ DC-DC コンバータ • • 単位: mm Pch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵。 |
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SSM5G02TU SSM5G02TU | |
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Contextual Info: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter • • Unit: mm Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET Characteristics |
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SSM5G09TU | |
SSM5H01TU
Abstract: marking kef
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SSM5H01TU SSM5H01TU marking kef | |
SSM5G02TU
Abstract: TA7150
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SSM5G02TU SSM5G02TU TA7150 | |
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Contextual Info: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET |
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SSM5G09TU | |
SSM5H16TUContextual Info: SSM5H16TU Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • 1.8-V drive • Combined an N-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings |
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SSM5H16TU SSM5H16TU | |
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Contextual Info: SSM5G01TU Silicon P Channel MOS Type U-MOSII /Silicon Epitaxial Schottky Planar Diode SSM5G01TU DC-DC Converter for DSCs and Camcorders • • Unit: mm Co-packaged Pch MOSFET and Schottky Diode. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) Characteristics |
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SSM5G01TU | |
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Contextual Info: SSM5H90TU Silicon N Channel MOS Type / Silicon Epitaxial Planer Diode SSM5H90TU High-Speed Switching Applications Unit: mm • Integrates an N-ch MOSFET and planer diodes into one package. • Low RDS ON and low VF Absolute Maximum Ratings (Ta = 25°C) for the MOSFET |
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SSM5H90TU | |