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    22P TRANSISTOR Search Results

    22P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    22P TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR p50

    Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
    Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the


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    eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11 PDF

    BUW22AP

    Abstract: BUW22P BUW22 BUW22A
    Contextual Info: 7^537 QQSaaCH T • H^-33-Z-l SGS-THOMSON BUW22/22P [¡«^ »[iCTtMntgS_BUW22A/22AP G S-THOMSON 30E » HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUW22, BUW22A are silicon multiepitaxial me­ sa PNP transistor in Jedec TO-3 metal case, particulary intended for switching applications.


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    jmS37 BUW22/22P BUW22A/22AP BUW22, BUW22A BUW22P, BUW22AP O-220 BUW22/P BUW22A/AP BUW22P BUW22 PDF

    BUW22AP

    Abstract: BUW22P
    Contextual Info: r Z 7 S G S -T H O M S O N BUW22/22P BUW22A/22AP HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUW22, BUW22A are silicon multiepitaxial me­ sa PNP transistor in Jedec TO-3 metal case, particulary intended for switching applications. The BUW22P, BUW22AP are mounted in T0-220


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    BUW22/22P BUW22A/22AP BUW22, BUW22A BUW22P, BUW22AP T0-220 BUW22/P MJW21A/F BUW22P PDF

    transistor 2N3906 datasheet

    Abstract: 2n3906 equivalent transistor "PNP Transistor" dip 2.54mm Header 3 Pin 2.54mm Header 8 Pin 10m resistor ecap Resistor 10K data sheet transistor 2n3906 2n3906
    Contextual Info: BOM for Combo Keyboard Rev 02, Feb 18 2000 Description Qty Value CAP 4 100n CAP 2 22p ECAP 1 1u ECAP 2 4u7 Resistor 1 10M Resistor 3 10K Resistor 2 27 ohm Resistor 3 330 ohm Supply Ferrite 2 0.5 AXIAL LED 3 GREEN PNP TRANSISTOR 1 2N3906 MC68HC908JB8 1 QFP44


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    2N3906 MC68HC908JB8 QFP44 R9-11 transistor 2N3906 datasheet 2n3906 equivalent transistor "PNP Transistor" dip 2.54mm Header 3 Pin 2.54mm Header 8 Pin 10m resistor ecap Resistor 10K data sheet transistor 2n3906 2n3906 PDF

    SW-DIP-2

    Abstract: UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic
    Contextual Info: 1 THAT Corporation Design Note 109 Microphone pre-amp using a THAT 120 transistor array The high-quality microphone preamp shown in the accompanying schematic uses a THAT120 with two transistors paralleled on each half of the differential input. Q1A and Q1B is a general purpose matched pair configured as current sources, which bias


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    THAT120 R12-16 1N960A 1N960A 1N4004 1N4148 UPA75V 10k00 SW-DIP-2 UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic PDF

    Contextual Info: MIC5800/5801 L 4/8-Bit Parallel-Input Latched Drivers General Description Features The MIC5800/5801 latched drivers are high-voltage, highcurrent integrated circuits comprised of four or eight CMOS data latches, a bipolar Darlington transistor driver for each


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    MIC5800/5801 IC5800 MIC5801 MIC5800/5801_ 33Rriaya: 1725-1C-12D PDF

    DMP2215L

    Abstract: DMP2215L-7 22p marking DMP2215 marking 27A sot23
    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage


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    DMP2215L OT-23 J-STD-020C MIL-STD-202, DS31125 DMP2215L DMP2215L-7 22p marking DMP2215 marking 27A sot23 PDF

    22p transistor

    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A


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    DMP2215L OT-23 OT-23 J-STD-020C MIL-STD-202, DS31125 22p transistor PDF

    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage


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    DMP2215L AEC-Q101 OT-23 J-STD-020C DS31125 PDF

    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage


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    DMP2215L AEC-Q101 OT-23 J-STD-020C DS31125 PDF

    transistor 22p

    Abstract: SOT23 22p
    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A


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    DMP2215L AEC-Q101 OT-23 OT-23 J-STD-020D DS31125 transistor 22p SOT23 22p PDF

    u1 7805

    Abstract: 7805 TO-3 7812 TO-3 ic 7805 working AN232-05 IC 7805 P9012134.zip 16F628 datasheet ic 7805 IC U4 7805
    Contextual Info: K150. USB PIC PROGRAMMER This documentation was written October 9, 2003. This is the third in a series of three PIC Programmers designed by Tony Nixon. Most of the components – resistors, some capacitors, transistors and two ICs – are surface mount and are presoldered on the board. There are


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    com/jpg/k150 16F628 FT232BM 20-Aug-2003 \PROGRAM\SCHEMS\K150 u1 7805 7805 TO-3 7812 TO-3 ic 7805 working AN232-05 IC 7805 P9012134.zip 16F628 datasheet ic 7805 IC U4 7805 PDF

    ind0603

    Abstract: ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8
    Contextual Info: Application Note 78 ML2722 & ML2751 Evaluation Design OVERVIEW FEATURES The ML2722/ML2751 evaluation design demonstrates the performance, simplicity and size of a transceiver for two application areas. First is a Direct Sequence Spread Spectrum DSSS at 1.536M chips per second and a


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    ML2722 ML2751 ML2722/ML2751 ML2722 ML2751 928MHzoration. AN78-01 ind0603 ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8 PDF

    Contextual Info: 2SD471 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SD471 Freq130M PDF

    Contextual Info: 2N619 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)8.0m


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    2N619 Freq200k PDF

    Contextual Info: 2SA1419T Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)500m


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    2SA1419T Freq120M PDF

    DMP2215L

    Abstract: DMP2215L-7 J-STD-020D
    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A


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    DMP2215L AEC-Q101 OT-23 J-STD-020D DS31125 DMP2215L DMP2215L-7 J-STD-020D PDF

    23/DMP2215L-7

    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100m @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215m @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance


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    DMP2215L AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31125 23/DMP2215L-7 PDF

    J-STD-020D

    Abstract: DMP2215L DMP2215L-7
    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A


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    DMP2215L AEC-Q101 OT-23 J-STD-020D DS31125 J-STD-020D DMP2215L DMP2215L-7 PDF

    DMP2215L

    Abstract: DMP2215 DMP2215L-7 22p marking
    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A


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    DMP2215L AEC-Q101 OT-23 OT-23 J-STD-020D DS31125 621-DMP2215L-7 DMP2215L-7 DMP2215L DMP2215 DMP2215L-7 22p marking PDF

    Contextual Info: DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features •        Mechanical Data   Low On-Resistance: • RDS ON < 100mΩ @ VGS = -4.5V, ID = -2.7A • RDS(ON) < 215mΩ @ VGS = -2.5V, ID = -2.0A Low Gate Threshold Voltage


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    DMP2215L AEC-Q101 OT-23 J-STD-020 DS31125 PDF

    transistor 22p

    Abstract: schematic diagram dac emfesh
    Contextual Info: eSH Series Application Notes EMFeSHxB 1. EMFeSHXA Flash Module Schematic Diagram: The EMFeSH’s Flash memory only support 3V power support. Connect +3VDC power to this connector OSCO/P5.3 Shared Port Jumper. Connect when pins are shared. Otherwise, pins are independent.


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    AP-eSH-0004 transistor 22p schematic diagram dac emfesh PDF

    2931a

    Abstract: 2931A datasheet TLC2262 tesoro r4 4.7k iC5A 4024 c1470n r5110k ic8b
    Contextual Info: RX Coil R27 5.1k R28 100k IC7a R29 100k C16 120p R3 20k C9 100p IC7b R19 82k C10 130p DISC 100k R1 1.2k R2 12k +V R23 100k C1 470n C2 47n All transistors common small-signal type, i.e., 2N3904 & 2N3906 C15 33nF R26 5.1k TX Coil R64 10k R69 27k C17 220nF R30


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    2N3904 2N3906 220nF IC10a TLC2262 LM393 MC33178 2931a 2931A datasheet TLC2262 tesoro r4 4.7k iC5A 4024 c1470n r5110k ic8b PDF

    Contextual Info: General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the


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    MIC58P01 500mA) MIC5801, MIC58P01 1725-1C-12D PDF