22N1 Search Results
22N1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 22N10 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 |
22N1 Price and Stock
Laird, A DuPont Business MGV0302R22N-10FIXED IND 220NH 9A 14 MOHM SMD |
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MGV0302R22N-10 | Tape & Reel | 3,000 | 3,000 |
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MGV0302R22N-10 | 5,000 |
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Microchip Technology Inc ATSAML22N18A-AUTIC MCU 32BIT 256KB FLASH 100TQFP |
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ATSAML22N18A-AUT | Cut Tape | 2,113 | 1 |
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ATSAML22N18A-AUT | Tape & Reel | 230 | 11 Weeks |
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ATSAML22N18A-AUT | 46 | 1 |
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ATSAML22N18A-AUT | 13 Weeks | 1,000 |
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ATSAML22N18A-AUT |
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ATSAML22N18A-AUT | 5,000 |
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onsemi NVH4L022N120M3SSIC MOS TO247-4L 22MOHM 1200V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVH4L022N120M3S | Tube | 641 | 1 |
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NVH4L022N120M3S | Tube | 5,400 | 8 Weeks | 30 |
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NVH4L022N120M3S | Bulk | 70 | 1 |
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NVH4L022N120M3S | 229 | 1 |
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NVH4L022N120M3S | 450 | 1 |
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NVH4L022N120M3S | 9 Weeks | 30 |
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NVH4L022N120M3S | 2,850 | 10 Weeks | 30 |
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NVH4L022N120M3S | 261,000 |
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NVH4L022N120M3S | 1,236 | 1 |
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Songtian Electronics (STE) SMDNTC2522N10002MK0SMD THERMISTOR-2522N100 |
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SMDNTC2522N10002MK0 | Bag | 200 | 1 |
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Ampleon B10G2022N10DLZB10G2022N10DLZ |
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B10G2022N10DLZ | Cut Tape | 114 | 1 |
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22N1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MDD25
Abstract: 255-16N1 MDD255 ixys MCC 700
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2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700 | |
T1125Contextual Info: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions |
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500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125 | |
2x520Contextual Info: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions |
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312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520 | |
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Contextual Info: Photoelectric sensors FKDM 22N1901/S14F Color sensors dimension drawing 22,9 50 31 * 35,4 15 42 keypad 50 4 13 4,3 M12 x 1 * emitter axis general data photo sensing distance Tw 40 mm sensor channels 4 teachable tolerance ranges 5-step teachable (LEDs) size of measuring spot |
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22N1901/S14F | |
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Contextual Info: Photoelectric sensors FKDM 22N1902/S14F Color sensors dimension drawing 22,9 50 31 * 35,4 15 42 keypad 50 4 13 4,3 M12 x 1 * emitter axis general data photo sensing distance Tw 40 mm sensor channels 2 teachable tolerance ranges 5-step teachable (LEDs) size of measuring spot |
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22N1902/S14F | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 22N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D VDSS ID25 = 1200V = 22A Ω RDS on = 0.55Ω ≤ 300ns trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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22N120 300ns OT-227 E153432 728B1 123B1 065B1 | |
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Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol |
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310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1 | |
IXGH22N170
Abstract: IXGT22N170
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22N170 O-247 O-268 405B2 IXGH22N170 IXGT22N170 | |
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Contextual Info: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; |
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255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e | |
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Contextual Info: Advance Technical Data High Voltage IGBT IXGH 22N170 VCES IXGT 22N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V |
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22N170 O-247 O-268 405B2 | |
25518NContextual Info: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 |
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255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 25518N | |
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Contextual Info: MDD95-22N1B Standard Rectifier Module VRRM = 2x 2200 V I FAV = 120 A VF = 1.13 V Phase leg Part number MDD95-22N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling |
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MDD95-22N1B O-240AA 60747and 20130702a | |
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Contextual Info: Photoelectric sensors FKDM 22N1911/S14F Color sensors dimension drawing 68,7 31 22,9 * 35,4 15 42 keypad 50 4 13 4,3 M12 x 1 * emitter axis general data photo sensing distance Tw 25 mm sensor channels 4 teachable tolerance ranges 5-step teachable (LEDs) |
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22N1911/S14F | |
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Contextual Info: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Conditions |
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2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a | |
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Contextual Info: Photoelectric sensors FKDM 22N1901/S14F Color sensors dimension drawing 22,9 50 31 * 35,4 15 42 keypad 50 4 13 4,3 M12 x 1 * emitter axis general data photo sensing distance Tw 40 mm sensor channels 4 teachable tolerance ranges 5-step teachable (LEDs) size of measuring spot |
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22N1901/S14F | |
22N120Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 22N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D VDSS ID25 = 1200V = 22A Ω RDS on = 0.55Ω ≤ 300ns trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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22N120 300ns 728B1 22N120 | |
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Contextual Info: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; |
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255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 E72873 20130813g | |
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Contextual Info: MDO500-22N1 High Voltage Standard Rectifier Module VRRM = 2200 V I FAV = 560 A VF = 0.98 V Single Diode Part number MDO500-22N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current |
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MDO500-22N1 60747and 20140204a | |
IXYS DIODE
Abstract: MDA 2500 ixys MDD 26 - 14 Westcode thyristor ixys MDD 26 14 150A11 D-68623 710-22N1
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710-22N1-26N1 710-22N1 710-24N1 710-26N1 IXYS DIODE MDA 2500 ixys MDD 26 - 14 Westcode thyristor ixys MDD 26 14 150A11 D-68623 710-22N1 | |
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Contextual Info: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol |
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2x520 2x310 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 10Transient 20100203a | |
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Contextual Info: MDD 200 IFRSM = 2x 350 A IFAVM = 2x 224 A VRRM = 1400-2200 V High Power Diode Modules VRSM V 1500 1700 1900 2300 VRRM V 1400 1600 1800 2200 3 Type 1 3 2 1 2 MDD 200-14N1 MDD 200-16N1 MDD 200-18N1 MDD 200-22N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM |
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200-14N1 200-16N1 200-18N1 200-22N1 E72873 9700ree 20080128a | |
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Contextual Info: MDA95-22N1B High Voltage Standard Rectifier Module VRRM = 2200 V I FAV = 2x 120 A VF = 1.13 V Common Anode Part number MDA95-22N1B Backside: isolated 3 1 2 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling |
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MDA95-22N1B O-240AA 60747and 20130702a | |
diode mdd 310Contextual Info: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol |
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310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1 diode mdd 310 | |
MDO 500-22N1
Abstract: MDO 500-12N1 500-20N1 101s102
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500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 MDO 500-22N1 MDO 500-12N1 500-20N1 101s102 | |