22K1 Search Results

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

Contextual Info: 3SK258 SILICON N CHANNEL DUAL GATE MOS TYPE Unit in mm T V TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. • • • 2.1 ±0.1 1.25+0. 1 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ. Low Noise Figure.

Contextual Info: GaAs N CHANNEL DUAL GATE MES TYPE Unit in mm T V T U N E R , U H F RF A M P LIFIE R APPLIC ATIO N S. 2. 1 ± 0 . 1 M A X I M U M RATIN GS Ta = 25°C SYMBOL CHARACTERISTIC Gate 1-Drain Voltage VG1DO Gate 2-Drain Voltage VG2DO Gate 1-Source Voltage VG1S Gate 2-Source Voltage

Contextual Info: 3SK256 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AM PLIFIER APPLICATIONS. U n it in m m 2.1 ± 0.1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 0.015pF Typ. • Low Noise Figure. : NF = 1.9dB (Typ.)

23marking

Contextual Info: GaAs N CHANNEL DUAL GATE MES TYPE 3SK274 U n it in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1 1 0. 1 MAXIMUM RATINGS Ta = 25°C 1. 2 5 ± 0 - 1 CHARACTERISTIC G atel-D rain Voltage SYMBOL RATING VG1D0 -9 V G ate2-D rain Voltage VG2D0 -9 V G atel-Source Voltage

MP05288.01

Abstract: GPS 634R
Contextual Info: Thin Film Chip Resistor 0805 Features • • • • Thin Film NiCr resistance element Precision tolerance from ±0.1% Extremly low TCR from ±5 to ±50 PPM/°C Special packaging 1,000 pcs. / 2,000 pcs. per reel available Application Medical equipment

3SK257

Contextual Info: 3SK257 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm T V TU N E R , VHF RF A M P LIFIER A PP LIC A T IO N S . FM TU N ER A PP LIC A T IO N S . TV TU N ER , UHF RF A M P LIF IE R A PP LIC A T IO N S . • Superior Cross Modulation Performance.

Contextual Info: 3SK293 東芝電界効果トランジスタ シリコンNチャネルデュアルゲートMOS形 3SK293 TVチューナ, UHF高周波増幅用 • 単位: mm 混変調特性が非常に優れています。 • 帰還容量が小さい。 : Crss = 16 fF 標準

NF 747

Abstract: 2SC5319 hfe 4049 V722 BB34 GA 1619
Contextual Info: TO SHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain : Ga = 11.5dB (f=2GHz) 1.25 ±0.1 13 -¡3 M A X IM U M RATINGS (Ta = 25°C)

3SK256

Contextual Info: TOSHIBA 3SK256 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK256 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. 2.1 + 0 . 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

MC ATAU - Precision

Contextual Info: ACAS 0606 ATAU - Precision www.vishay.com Vishay Beyschlag Precision Gold Terminated Thin Film Chip Resistor Array for Conductive Gluing FEATURES • Gold terminations for conductive gluing • Superior moisture resistivity, |R/R| < 0.5 % 85 °C; 85 % RH; 1000 h

VISHAY film resistors

Contextual Info: V ishay I ntertechn o l o g y, I nc . ACAC 0 612 a nd ACAS 0 612 Profe s sional Se r ie s Key Benefits • Four resistors in one package • Two pairs or four equal resistor values • TCR down to ± 25 ppm/K • Tolerance down to ± 0.5 % • Up to 40 % space savings and reduced placement costs

Contextual Info: ACAS 0 6 0 6 AT a nd ACAS 0 612 AT Se r ie s Precision Thin Film Chip Resistor Arrays Key Benefits • Two or four resistor values on one substrate • 155 °C max. film temperature • ESD capability 1000 V, human body model • AEC-Q200 qualified • TCR tracking down to 10 ppm/K ± 5 ppm/K and tolerance matching down

Contextual Info: TO SHIBA 3SK274 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK274 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 M A X IM U M RATINGS Ta = 25°C 1. 25 ± 0 . 1 SYMBOL RATING UNIT Gatel-Drain Voltage VG1D0 -9 V Gate2-Drain Voltage

Ferrite core 13.56 MHz RFID tag inductor antennas

Abstract: OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral
Contextual Info: microID 13.56 MHz RFID System Design Guide INCLUDES: • • • • • • • • Passive RFID Basics Application Note MCRF355/360 Data Sheet Microchip Development Kit Sample Format MCRF355/360 Factory Programming Support SQTPSM MCRF355/360 Applications Application Note

Cutler-Hammer

Abstract: NH3 GL-GG TYCO 596A RECTIFIER LS CIRCUIT BREAKERS KS-20472 THHN 6 str green kic 125 hot air gun fan controller circuit G488 N 847568920
Contextual Info: CB Architecture TS 208/240V TS 480V Battery Panels @ AC/Rect: 1 TABLE t SYSTEM ARCHITECTURE TABLE 3: AC INPUT AND RECTIFIER SHELF OPTIONS IN A 6 OR 7 FOOT HIGH CABINET OOOSE OM.Y 0 £ choose only one H569-434 AC INPUT AND RECTIFIER SHELF OPTIONS 7 IN A 7 FOOT HIGH CABINET

Contextual Info: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm 2.1±0.1 FEATURES 3 1 2 0.2+0.1 –0.05 1 0~0.1 P8 0.15±0.05 4 +0.05 0.95 –0.15 Marking 3 High Gain:|S21e|2=15.0dB @f=2GHz

Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2 .1 ± 0 . 1 • Low Noise Figure : NF = 1.5dB f=2GHz • High Gain : Gain = lOdB (f = 2GHz) . 1.25 ± 0-1 ri 2 MAXIMUM RATINGS (Ta = 25°C)

XC95144XLTQ100

Abstract: XC95144XL-TQ100 PAD336 ctcb1210 CTCB1210-600S Video-Encoders C491 b30 c300 NTE0505M PAD102
Contextual Info: 5 4 3 2 1 AUDIO_5V C1 C2 0.1uF C3 0.1uF + C4 0.1uF 10uF @ 16V U26 27 D VDD VDD AUDIO_GND VDD 6 16 D A R2 C484 19 LM4835 AUDIO AMP R2 R3 C5 20K 5% BEEP A R1 18 13 A_FB - OUT A 17 20K 5% L_SPKR_NEG + OUT A 15 L_SPKR_POS 12 A IN HP_IN 21 20K 5% + 20K 5% 0.33uF @ 35V

59012 h 331

Contextual Info: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)

2SC5324

Contextual Info: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

working OF IC 723

Abstract: 2SC5098 IC 7420
Contextual Info: TO SH IBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2—lOdB f=2GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

BC518

Abstract: acer battery pinout ATI RAGE mobility m1 acer 15.6 pinout BC505 R2501a BC466 rdn27 asus BC370
Contextual Info: CLK GEN. ICS9248-61 Acer B-NOTE CPU COPPERMINE PAGE:3 V1.5 PCB LAYER TOP L1 : SIGNAL1 L2 : SIGNAL2 L3 : GND L4 : SIGNAL3 L5 : SIGNAL4 L6 : VCC L7 : SIGNAL5 L8 : SIGNAL6 BOTTOM PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 HOST BUS PAGE:3 MEM BUS DIMM*2