22CV Search Results

Contextual Info: Preliminary Information INC. PEEL 22CV10A-7 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs — Variable product term distribution 8 to 16 per output for greater logic flexibility

PEEL22CV10P

Abstract: ict PEEL22cv10p
Contextual Info: INTERNATIONAL C M O S 9: 3 7E 4 0 * 4 0 70 7 D 0Q003bb Product Previev; INTERNATIONAL CMOS TECHNOLOGY, INC. T ^ 6 - Í 9 0 / PEELLm 22CV1 0-12/22CV10=15 CMOS Programmable Electrically Erasabi Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. INTERNATIONAL C M O S 37E D H March 1991 4640707 0D0043T 1 IS ICT PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Featu res ^ ^ ^ ~<^~7 Architectural Flexibility — 132 product term x 44 input AND array

ICT 20 PIN PLASTIC 300 MIL DIP

Abstract: 22V10 complete details 22CV10AZ 22CV10A PAL22V10 PEEL22CV10AZJ-25 PEEL22CV10AZP-25 PEEL22CV10AZPI-25 PEEL22CV10AZS-25 PEEL22CV10AZT-25
Contextual Info: Commercial/ Industrial PEEL 22CV10AZ -25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - VCC = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz - tPD = 25ns. ■ CMOS Electrically Erasable Technology

variable frequency drive block diagram

Abstract: PEEL22CV10AZJ-25 PLD 22V10 22CV10A 22CV10AZ-25 PAL22V10 PEEL22CV10AZP-25 PEEL22CV10AZPI-25 PEEL22CV10AZS-25 PEEL22CV10AZT-25
Contextual Info: PEEL 22CV10AZ-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - VCC = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz - tPD = 25ns. ■ CMOS Electrically Erasable Technology

Contextual Info: Commercial Industrial INC. PEEL 22CV1OAZ-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 pA typical at standby - Icc = 2 mA (typical) at 1 MHz - tPD = 25ns. ■ CMOS Electrically Erasable Technology

Contextual Info: To Notfind recommended out if the package for New you designs need isavailable, contactcontact factoryCustomer for availability Service PEEL 22CV10AZ -25 CMOS Programmable Electrically Erasable Logic Device Architectural Flexibility - 133 product terms x 44 input AND array

Contextual Info: Not recommended for New designs contact factory for availability PEEL 22CV10A -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz Architectural Flexibility

22v10 pal

Abstract: PEEL22CV10AZPI-25 PEEL22CV10AZTI-25 22CV10A PAL22V10 PEEL22CV10AZJ-25 PEEL22CV10AZP-25 PEEL22CV10AZS-25 PEEL22CV10AZT-25
Contextual Info: PEEL 22CV10AZ -25 CMOS Programmable Electrically Erasable Logic Device Architectural Flexibility - 133 product terms x 44 input AND array Features Ultra Low Power Operation - VCC = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz

ICT 22cv10ap

Abstract: PEEL programming 22CV10AP ICT Peel 22cv10a PEEL 22CV10AP-10 22cv10aj 22cv10 PEEL 22CV10ASI-10 18CV8
Contextual Info: Commercial/ Industrial PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz ■ Electrically Erasable Technology - Superior factory testing

GAL Gate Array Logic

Abstract: 22CV8 gal20v8 application
Contextual Info: TM 22CV8 Commercial PEEL PEEL 22CV8 -5/-7/-10/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed, Low Power - Speeds ranging from 5ns to 25ns - Less power than quarter-power PALs and GALs ■ CMOS Electrically Erasable Technology

22CV10Z

Contextual Info: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI 22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

Contextual Info: -> rim il n »M . CMOS Programmable Electrically Erasable Logic Device n i r m l l « Semiconductors Product Preview PEEL"22CV10-15 Features — Variable product term distribution 8 to 16 per output for greater logic flexibility — Independently programmable 12-configuration

Contextual Info: INTERNATIONAL C M O S 5SE D 4Ö407G7 GDD05D0 T Preliminary INTERNATIONAL CMOS TECHNOLOGY, INC. " P M H 3 - 4 7 PEEL*22CV1OZ "Zero Power” CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

PEEL programming

Abstract: PEEL 22CV10AP-10 22CV10AP* PEEL l22c PEEL22CV EL22C PEEL Gate Array Logic 22cv10ap PEEL 22CV10AJ-10 PEEL 22CV10API-25
Contextual Info: Commercial/ Industrial INC. PEEL 22CV1OA -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Features • ■ High Speed/Low Power Architectural Flexibility - Speeds ranging from 5ns to 25ns - Power as low as 67m A at 25M H z - Electrically Erasable Technology

22CV10AP

Abstract: 22cv10aj 22cv10ap-25 22CV10API-25 22cv10aj-15 22CV10AJ-25 PEEL programming 22CV10AP-10 PEEL 22CV10AP-10 22CV10
Contextual Info: PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz ■ Electrically Erasable Technology - Superior factory testing - Reprogrammable in plastic package

22cv10ap

Abstract: PEEL 22CV10AP-10 PEEL programming 22CV10AP* PEEL 22CV10AP-10 PEEL 22CV10AP-15 peel22cv10ap PEEL 22CV10ASI-25 18CV8 22CV10A
Contextual Info: PEEL 22CV10A -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz Architectural Flexibility - 132 product term X 44 input AND array - Up to 22 inputs and 10 outputs

Contextual Info: To Notfind recommended out if the package for New you designs need isavailable, contactcontact factoryCustomer for availability Service PEEL 22CV10AZ -25 CMOS Programmable Electrically Erasable Logic Device Architectural Flexibility - 133 product terms x 44 input AND array

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. March 1991 PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs

Contextual Info: PEEL 22CV8 -5/-7/-10/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed, Low Power ■ - PALs and G A L s ■ CMOS Electrically Erasable Technology - S u p e rio r fa c to ry te s tin g - R e p ro g ra m m a b le in p la s tic p a c k a g e

Contextual Info: International CMOS Technology Commercial/ Industrial PEEL 22CV10AZ-25 CMOS Programmable Electrically Erasable Logic Device Architectural Flexibility Features • - Ultra Low Power Operation - V cc = 5 Volts ±10% - Icc = 25 |iA typical at standby - Icc = 3.5 m A (typical) at 1 MHz

22CV10AP* PEEL

Abstract: 22cv10a S24IC 22cv10ap
Contextual Info: Commercial/ Industrial PEEL 22CV10A-5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed/Low Power − Speeds ranging from 5ns to 25ns − Power as low as 67mA at 25MHz ■ Electrically Erasable Technology − Superior factory testing

Contextual Info: Commercial/ Industrial INC. PEEL 22CV10A -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Features • ■ High Speed/Low Power Architectural Flexibility - S p e e d s ra n g in g fro m 5 n s to 2 5 n s - P ow er as low as 6 7 m A at 2 5 M H z

22CV10AP

Abstract: 22cv10aj PEEL 22CV10AP-10 22CV10API-25 22CV10AP-10 PEEL programming PEEL22CV10AP-7
Contextual Info: Not recommended for New designs contact factory for availability PEEL 22CV10A -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz Architectural Flexibility