22AUG05 Search Results

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Contextual Info: THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION RIGHTS - - RES ER VED . LOC D IS T GP 00 REVISIO N S LTR D E S C R IP TIO N 1. THE CONTACT SURFACES WITH LUBRICANT. ATERIAL: i r r r r r r r r

TEKS5400

Abstract: TEKT5400S TSKS5400S
Contextual Info: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.

AN609

Abstract: Si2314EDS
Contextual Info: Si2314EDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si2307BDS
Contextual Info: Si2307BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4834BDY

Abstract: 70315
Contextual Info: SPICE Device Model Si4834BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si2312DS
Contextual Info: Si2312DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

RCA1206

Abstract: RCA0805 20034 RCA2010 RCA1210 RCA2512
Contextual Info: RCA Vishay Automotive Grade Thick Film, Rectangular Chip Resistors FEATURES • Metal glaze on high quality ceramic with protective overglaze • Sulfur resistant • Superior resistance against H2S-atmosphere than standard Ag contacts • Solder contacts on Ni barrier layer

Contextual Info: SPICE Device Model Si7455DP Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mosfet 4501

Abstract: Datasheet 4449 200nf capacitor SI2328 AN609 Si2328DS
Contextual Info: Si2328DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: TEKS5400 Vishay Semiconductors Silicon Photodetector with Logic Output Description TEKS5400 is a high sensitive Photo Schmitt Trigger in a molded flat sideview plastic package with spherical lens. The integrated infrared filter is spectrally matched to GaAs IR emitters wave length of 950 nm.

si7489dp

Abstract: V5013
Contextual Info: SPICE Device Model Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: TSKS5400-FSZ Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400-FSZ is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile case.

Contextual Info: TEKS5400 Vishay Semiconductors Silicon Photodetector with Logic Output Description TEKS5400 is a high sensitive Photo Schmitt Trigger in a molded flat sideview plastic package with spherical lens. The integrated infrared filter is spectrally matched to GaAs IR emitters wave length of 950 nm.

Si7457DP

Contextual Info: SPICE Device Model Si7457DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST GP 00 LTR B 36X OPTIONAL GROUNDING PAD MUST CONTACT SCREW HEAD 0 .0 3 2 DESCRIPTION REVISED PER E C O -08- 007327

tsks5400s-asz

Contextual Info: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.

0-928959-6

Abstract: 19-or
Contextual Info: 4 i RELEASED FOR PUBLICATION THJS DR/4 IVIN£ IS UNPUBL Ibh'tD. FREI FUER VEROEFFENTLICHUNG VERTRAULICHE UWVEROEFFENTLJCHTE ZEICHNUNG BY INCORPORATED COPYRIGHT 19or AMP flnp nlukkuka icu. A[_LE RIGHTS RECH7E RESERVED. VORBEHALTEN i 3 ,Ì 9 - . 2 MATED WITH:

MIL-M-24519

Contextual Info: 7 8 4 3 2 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC C iO -2 5 R EV ISIO N S DIST AJ 1 6 jY p LTR DESCRIPTION A ^ [ + . 0 1 o ] ' TK DATE REVISED PER EC 0S1 4 - 0 1 5 0 - 0 5 DWN

Si7489DP

Abstract: 51549R
Contextual Info: SPICE Device Model Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si2316DS
Contextual Info: Si2316DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].