225PCS Search Results

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

MS-0020

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

m04a

Abstract: MS-0040
Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。

R1LP0108ESP

Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。

M04A

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。

半導体磁気抵抗素子

Abstract: MS-0020 m02a
Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0300 Rev.3.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0152EJ0100 Rev.1.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

Contextual Info: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher

BL-AT1Z13

Contextual Info: LED LIGHT BAR, ARROW DISPLAY BL-AT1Z13 Features: Ø ARROW DISPLAY, 13mm small triangle Ø Ultra brightness available Ø Low current operation. Ø Excellent character appearance. Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Electrical-optical characteristics: Ta=25°C

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。

M04A

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。

M04A

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。

R1LP0408D

Abstract: R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R10DS0104EJ0200 R1LP0408DSP-5SR R1LP0408DSP-5SI
Contextual Info: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher

R1LV0108ESA-7SR

Abstract: r1lv0108 R1LV0108ESP R1LV0108ESP-7SI R1LV0108E R1LV0108ESF-5SI R1LV0108ESF-7SR R1LV0108ESF-7SI#S0 r1lv0108esa-7sr#s0 R1LV0108ESA
Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher