223 50K Search Results

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS on = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: SFM9210 Advanced Power MOSFET FEATURES BVDSS = -200 V ! Avalanche Rugged Technology RDS on = 3.0 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -0.5 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

SFM9014

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS on = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LM317M LINEAR INTEGRATED CIRCUIT MEDIUM CURRENT 1.2V TO 37V ADJUSTABLE VOLTAGE REGULATOR 1 1 2 3 TO-252 SOT-223 DESCRIPTION The UTC LM317 is an adjustable 3-terminal positive voltage regulator, designed to supply 500mA of output current with voltage

Contextual Info: IRFL1006 S O T -2 2 3 l l l l l Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Power MOSFET Description D The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V  Avalanche Rugged Technology RDS on = 0.5 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = -1.8 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V  Avalanche Rugged Technology RDS on = 1.5 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = 0.77 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.22 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Contextual Info: IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V n Avalanche Rugged Technology RDS on = 1.5 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 0.77 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V  Avalanche Rugged Technology RDS on = 1.2 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = -1.0 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

IRLM220A

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

CWC1

Abstract: VND7NV04 VND7NV04-1 VND7NV0413TR VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR L-12129
Contextual Info: VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN7NV04 VNS7NV04 VND7NV04 RDS on Ilim Vclamp 60 mΩ 6A 40 V 2 1 2 3 SO-8 SOT-223 VND7NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION

SFM9110

Contextual Info: SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 1.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -1.0 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: IRFM120A Advanced Power MOSFET FEATURES IEEE802.3af Compatible BVDSS = 100 V  Avalanche Rugged Technology RDS on = 0.2 !  Rugged Gate Oxide Technology  Lower Input Capacitance ID = 2.3 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 #A (Max.) @ VDS = 100V

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

SFM9110

Contextual Info: SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 1.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -1.0 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

OMNIFET

Abstract: VND3NV04 VND3NV04-1 VNN3NV04 VNS3NV04 F1621
Contextual Info: VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN3NV04 VNS3NV04 VND3NV04 RDS on Ilim Vclamp 120 mΩ 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 VND3NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION

Contextual Info: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V  Avalanche Rugged Technology RDS on = 0.22 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = 2.3 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

MC4044P

Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Contextual Info: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation

Contextual Info: IRFL4105 MOSFET D l l l l Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.045Ω G ID = 3.7A S S O T -22 3 Description The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

X9525

Abstract: X9525V20I X9525V20IZ
Contextual Info: X9525 NS ESI G D NEW DChannel/Gigabit CT Ethernet Laser Diode Control for Fiber Optic Modules FOR Fiber O U 29 R D P E ND TE 223 E U L T S M I I T , S OM 26 Sheet September 21, 2010 FN8210.2 S UB 223Data RE C NOT SSIBLE 2323, ISL O 2 P SL 20, I X958 Dual DCP, EEPROM Memory

103 1KV

Abstract: 472 1kv capacitor 472 2kv 472 2KV capacitor 103 1KV capacitor 472 3kv 1031KV capacitor 681 capacitor 332 10kv capacitor 221 1kv
Contextual Info: Suntan HIGH VOLTAGE CERAMIC CAPACITOR FEATU R E S ‧ Use for coupling, and by-pass circuit there are a stable and high reliability products TS16 S P E C I F I C A T OPERATING CONDITION RANGE -25℃ to +85℃ RATED WORKING VOLTAGE 1 KV – 50KVDC I CAPACITANCE RANGE