223 50K Search Results

IRLM120A

Contextual Info: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.22 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

SFM9214

Contextual Info: SFM9214 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -0.45 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

SFM9014

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS on = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS on = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

IRFM120A

Contextual Info: IRFM120A Advanced Power MOSFET FEATURES IEEE802.3af Compatible BVDSS = 100 V ! Avalanche Rugged Technology RDS on = 0.2 ! ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = 2.3 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V

Contextual Info: SFM9210 Advanced Power MOSFET FEATURES BVDSS = -200 V ! Avalanche Rugged Technology RDS on = 3.0 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -0.5 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

SFM9210

Contextual Info: SFM9210 Advanced Power MOSFET FEATURES BVDSS = -200 V ! Avalanche Rugged Technology RDS on = 3.0 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -0.5 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

IRLM014A

Contextual Info: IRLM014A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS on = 0.155 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

IRLM110A

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.44 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

SFM9014

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V ! Avalanche Rugged Technology RDS on = 0.5 Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = -1.8 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LM317M LINEAR INTEGRATED CIRCUIT MEDIUM CURRENT 1.2V TO 37V ADJUSTABLE VOLTAGE REGULATOR 1 1 2 3 TO-252 SOT-223 DESCRIPTION The UTC LM317 is an adjustable 3-terminal positive voltage regulator, designed to supply 500mA of output current with voltage

Contextual Info: IRFL1006 S O T -2 2 3 l l l l l Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Power MOSFET Description D The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

Contextual Info: SFM9014 Advanced Power MOSFET FEATURES BVDSS = -60 V  Avalanche Rugged Technology RDS on = 0.5 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = -1.8 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Contextual Info: IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V  Avalanche Rugged Technology RDS on = 1.5 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = 0.77 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: IRLM210A Advanced Power MOSFET FEATURES BVDSS = 200 V n Avalanche Rugged Technology RDS on = 1.5 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 0.77 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Contextual Info: SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V  Avalanche Rugged Technology RDS on = 1.2 Ω  Rugged Gate Oxide Technology  Lower Input Capacitance ID = -1.0 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

IRLM220A

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

CWC1

Abstract: VND7NV04 VND7NV04-1 VND7NV0413TR VNN7NV04 VNN7NV0413TR VNS7NV04 VNS7NV0413TR L-12129
Contextual Info: VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN7NV04 VNS7NV04 VND7NV04 RDS on Ilim Vclamp 60 mΩ 6A 40 V 2 1 2 3 SO-8 SOT-223 VND7NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION

Linear Regulator sot-89-5

Abstract: APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C
Contextual Info: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features Built in Current Limit Protection Controlled Short Circuit Current : 200mA Fast Transient Response Short Setting Time SOT-89, SOT-89-5, SOT-223, SO-8 ,TO-252 and TO-252-5 Packages Lead Free Available RoHS Compliant

SFM9110

Contextual Info: SFM9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 1.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -1.0 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: IRFM120A Advanced Power MOSFET FEATURES IEEE802.3af Compatible BVDSS = 100 V  Avalanche Rugged Technology RDS on = 0.2 !  Rugged Gate Oxide Technology  Lower Input Capacitance ID = 2.3 A  Improved Gate Charge  Extended Safe Operating Area SOT-223  Lower Leakage Current : 10 #A (Max.) @ VDS = 100V

Contextual Info: IRLM220A Advanced Power MOSFET FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V