2226 TRANSISTOR Search Results

TRANSISTOR 2226

Abstract: 2226 transistor UNR2227
Contextual Info: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2)   6.8 kΩ 1.1+0.2

Contextual Info: 19-2226; Rev 1; 7/04 KIT ATION EVALU E L B AVAILA Temperature Sensor and System Monitor in a 10-Pin µMAX The MAX6683 system supervisor monitors multiple power-supply voltages, including its own, and also features an on-board temperature sensor. The MAX6683

MAX6683

Abstract: MAX6683AUB MAX6683EVKIT
Contextual Info: 19-2226; Rev 1; 7/04 KIT ATION EVALU E L B AVAILA Temperature Sensor and System Monitor in a 10-Pin µMAX The MAX6683 system supervisor monitors multiple power-supply voltages, including its own, and also features an on-board temperature sensor. The MAX6683

Contextual Info: 19-2226; Rev 0; 10/01 Temperature Sensor and System Monitor in a 10-Pin µMAX Applications Features ♦ Monitors Local Temperature ♦ Monitors Three External Voltages 1.8V, 2.5V, 5V Nominal ♦ Monitors VCC (3.3V Nominal) ♦ User-Programmable Voltage and Temperature

F923

Abstract: IRF9230 IRF9232 IRF9231 IRF9233 transistors bipolar
Contextual Info: _ Rugged Power MOSFETs File Number IRF9230, IRF9231, IRF9232, IRF9233 2226 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -5.5 A and -6.5 A, -150 V and -200 V rDs on = 0.8 i l and 1.2 Cl D Features: • ■ ■ ■ • S ingle pulse avalanche e n ergy ra ted

ic MARKING FZ

Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: Transistors with built-in Resistor UNR2225 UN2225 , UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and

ic MARKING FZ

Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and

UN2225

Abstract: UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 (0.65)

RN2227

Abstract: 2226 transistor transistor 2227 RN2222 RN2224 2227 RN1221 RN1227 RN2221 RN2223
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors

RN1221

Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 2226 transistor
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors

Contextual Info: LTC2226H 12-Bit, 25Msps 125°C ADC in TQFP Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Description Sample Rate: 25Msps –40°C to 125°C Operation Single 3V Supply 2.8V to 3.5V Low Power: 75mW 71.4dB SNR 90dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range

Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors

Lu32

Contextual Info: LTC2226H 12-Bit, 25Msps 125°C ADC in TQFP FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Sample Rate: 25Msps –40°C to 125°C Operation Single 3V Supply 2.8V to 3.5V Low Power: 75mW 71.4dB SNR 90dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range

RN2223

Abstract: ko iq
Contextual Info: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)

Contextual Info: T O SH IB A RN2221 ~ R N 2 2 2 7 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High C urrent Type (10 (MAX)= —800mA)

RN1221

Abstract: RN1227 RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227
Contextual Info: RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z High current type (IC(MAX) = −800mA) z With built-in bias resistors

EMA302B

Abstract: EPA080A EPA160A
Contextual Info: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC

LTC2229

Abstract: LTC2249 LTC2252 LTC2253 LTC2254 LTC2255
Contextual Info: LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps Low Power 3V ADCs FEATURES DESCRIPTION n The LTC 2228/LTC2227/LTC2226 are 12-bit 65Msps/ 40Msps/25Msps, low power 3V A/D converters designed for digitizing high frequency, wide dynamic range signals. The LTC2228/LTC2227/LTC2226 are perfect for demanding imaging and communications applications with AC

LTC2225

Abstract: LTC2226 LTC2227 LTC2228 LTC2229 LTC2245 LTC2246 LTC2247 LTC2248 LTC2249
Contextual Info: LTC2228/LTC2227/LTC2226 12-Bit, 65/40/25Msps Low Power 3V ADCs U FEATURES DESCRIPTIO • The LTC 2228/LTC2227/LTC2226 are 12-bit 65Msps/ 40Msps/25Msps, low power 3V A/D converters designed for digitizing high frequency, wide dynamic range signals. The LTC2228/LTC2227/LTC2226 are perfect for demanding imaging and communications applications with AC

Contextual Info: ERICSSON ^ PTB 20157 20 Watts, 1.35-1.85 GHz Cellular Radio RF Power Transistor Description Key Features The 20157 is a Class C, NPN, common base RF Power Transistor intended for 22-26 VDC operation across the 1.35 -1.85 GHz frequency band. It is rated at 20 Watts minimum output

Contextual Info: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors