220 V Search Results

220-14N1

Abstract: 220-12n1 220-16n1
Contextual Info: MDD 220 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1023 Case : TO-220 T5L20 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: SR320 THRU SR3100 3.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 3.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction DO-201AD .220 5.6

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

LM317T3

Abstract: utc lm317k
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LM317 LINEAR INTEGRATED CIRCUIT 3-TERMINAL 1A POSITIVE ADJUSTABLE VOLTAGE REGULATOR 1 1 TO-220 TO-220F DESCRIPTION The UTC LM317 is an adjustable 3-terminal positive voltage regulator, designed to supply 1A of output current with voltage

Contextual Info: D1 Non resettable fuses www.schurter.com/pg01_2 Miniature Fuse, 5 x 20 mm, Quick-Acting F, NF, 220 VAC NF C 93-435 • 220 VAC · Quick-Acting F Description Weblinks - Low Breaking Capacity pdf-datasheet, html-datasheet, General Product Information, Approvals,

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BDT60C

Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE

voltage regulation diode 8.2 v 1w

Abstract: C19C
Contextual Info: TL783 HIGH-VOLTAGE ADJUSTABLE REGULATOR SLVS036I – SEPTEMBER 1981 – REVISED APRIL 2003 D D D KC TO-220 PACKAGE (TOP VIEW) IN OUT ADJ OUT D D Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider 700-mA Output Current Full Short-Circuit, Safe-Operating-Area, and

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

dsep 12-12a

Abstract: 12-12a 1212a
Contextual Info: DSEP 12-12A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 12-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5

DSEP 12A

Abstract: ixys dsep 8-12a ixys 8-12a 40 khz ultrasonic us-100 DSEP 8 12a diode 10a 600v
Contextual Info: DSEP 8-12A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 8-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5

25-0025B

Abstract: 3525a
Contextual Info: DSS 25-0025B IFAV = 25 A VRRM = 25 V VF = 0.44 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 25 25 TO-220 AC Type A C C A DSS 25-0025B C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5

Contextual Info: DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 29-12A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5

BD136

Abstract: BD135 BUX85 transistor bd135
Contextual Info: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

ebonol

Abstract: 260-4TH5B ebonol c black 205cb AB-275 204-CB TUBE 1625 5 lead dd pak weight 260-6SH5B 205-CB
Contextual Info: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS 217 SERIES Surface Mount Heat Sinks D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area,

Contextual Info: DSSK 28-0045A IFAV = 2x14 A VRRM = 45 V VF = 0.57 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 TO-220 AB Type A DSSK 28-0045A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5

TIC108D

Abstract: TIC108 TIC108M TIC108N TIC108S
Contextual Info: TIC108 SERIES SILICON CONTROLLED RECTIFIERS ● 5 A Continuous On-State Current ● 20 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage K 1 ● Max IGT of 1 mA A 2 G 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.

Contextual Info: High - Q NP0 Chip Capacitors Features • Capacitance available from 0.1 pF to 220 pF. • Available in 0201, 0402, 0603 and 0805 sizes. • Nickel Barrier / Tinned Termination. Characteristics Typical Series Resonant Frequency 10 Dissipation Factor: .0002 0.02% max, 25°C

Contextual Info: HOW TO ORDER 8 1 L Type Voltage 4 6.3 10 16 25 35 50 63 71 80 100 110 120 125 160 180 200 220 250 280 300 310 315 330 350 385 400 450 500 525 Code Product 8 Element 1 2 Semifinished Product F 4 C<10uF R Decimal point should be expressed by R 0.22uF R22 1uF

Contextual Info: HOW TO ORDER 8 1 L Type Voltage 4 6.3 10 16 25 35 50 63 71 80 100 110 120 125 160 180 200 220 250 280 300 310 315 330 350 385 400 450 500 525 Code Product 8 Element 1 2 Semifinished Product F 4 C<10uF R Decimal point should be expressed by R 0.22uF R22 1uF

NOME687M002

Abstract: E227M
Contextual Info: OxiCap NOM Low ESR Multianodes Niobium Oxide Capacitor • Multi-anode construction • Super low ESR • Non-burn safe technology • CV range: 220-680µF / 1.8-6.3V • IBM global approval received in 2004 • Electra award received in 2005 Electra Award

dsi30 diode

Abstract: 3012A
Contextual Info: DSI 30 VRRM = 800-1600 V IF AV M = 30 A Rectifier Diode VRSM V VRRM TO-220 TO-263 DSI 30-08A DSI 30-12A DSI 30-14A DSI 30-16A DSI 30-08AS DSI 30-12AS DSI 30-14AS DSI 30-16AS A C TO-263 AA V A 800 1200 1400 1600 Symbol Conditions IF(AV)M TC IFSM TVJ = 45°C;

TPS77401-EP

Contextual Info: TPS77301/315/316/318/327/328/333/350 WITH RESET OUTPUT TPS77401/415/418/427/428/433/450 WITH POWER GOOD OUTPUT 250-mA LDO REGULATORS WITH 8-PIN MSOP PACKAGING SLVS281E – FEBRUARY 2000 – REVISED JULY 2001 D Open Drain Power-On Reset With 220-ms TPS773xx