22 PF CAPACITOR DATASHEET Search Results

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its high power added efficiency (up to 50%) and single positive

mmic marking code

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless applications in the 2.4 2.5 GHz ISM band e.g. Bluetooth class 1 . Its high power added efficiency (up to 50%) and single, positive supply

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

X7R murata

Abstract: Marking code CGB
Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - preliminary data • High performance, ultra-low power Cortex-M0 32-bit based architecture core  On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

Multilayer Ceramic Dipped Axial and Radial Capacitors

Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: CGB 241 Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency

Contextual Info: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package

Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

ims pcb

Contextual Info: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

Contextual Info: CGB 241 Preliminary Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency (up to

R07DS0095EJ0800

Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

Contextual Info: LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @28 V = 45 W with 16 dB gain @ 1600 MHz • BeO free package

smd transistor n6

Abstract: SMD code E2
Contextual Info: RHF1401 Rad-hard 14-bit 30 Msps A/D converter Datasheet − production data Features Ceramic SO-48 package • Qml-V qualified, smd 5962-06260 ■ Rad hard: 300 kRad Si TID ■ Failure immune (SEFI) and latch-up immune (SEL) up to 120 MeV-cm2/mg at 2.7 V and

stm8l

Abstract: STM8l one pulse mode STM8L101 STM8L15x AN3029 STM8L cpu programming manual RLink schematic Raisonance stm8l152 STM8L1526-EVAL pm0044
Contextual Info: AN3029 Application note Getting started with STM8L Introduction This application note complements the information in the STM8L datasheets by describing the minimum hardware and software environment required to build an application around an STM8L 8-bit microcontroller device.

Contextual Info: 3938 PRELIMINARY DATASHEET - 3/24/03 Subject to change without notice ABSOLUTE MAXIMUM RATINGS ( at TA = +25°C ) Load Supply Voltage, VBB . 50 V VREG (Transient) . 15 V Logic Input Voltage Range,

L9177

Contextual Info: L9177 Peripheral on chip for low end engine control Datasheet - production data – Serial driving – Output internally clamped to 45 V – Minimum guaranteed output current 1 A 2 A during in-rush – Ron 1.5 Ω worst case (at Tj = 150 °C) '!0'03

Contextual Info: VSC7998 Datasheet Features Applications • • • • • • • • • • • • Adjustable output offset 1.4 kΩ differential transimpedance −5.2 V power supply 2.0 mA peak-to-peak p-p maximum input current 10.7 Gbps SONET OC-192/SDH STM-64 systems

Contextual Info: RHF801 Rad-hard very high-speed comparator Datasheet - production data Features Ceramic Flat-8 • Propagation time of 7 ns • Rise/fall time: 1.1 ns on 10 pF • Low consumption: 1.4 mA • Single supply: 3 V to 5.5 V • 300 krad high-dose rate • SEL-free up to 120 MeV.cm²/mg