22 PF CAPACITOR DATASHEET Search Results

murata COG capacitor

Abstract: 0402CS-1N0X CGB240B J-STD-033 TSSOP10
Contextual Info: GaAs MMIC CGB240B Datasheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its high power added efficiency (up to 50%) and single positive

mmic marking code

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless applications in the 2.4 2.5 GHz ISM band e.g. Bluetooth class 1 . Its high power added efficiency (up to 50%) and single, positive supply

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

TriQuint PACKING

Abstract: CGB240 CGB240B MSOP-10 LL1005FH22NJ VC211 capacitor 22 pF marking us capacitor pf l1
Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

X7R murata

Abstract: Marking code CGB
Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - preliminary data • High performance, ultra-low power Cortex-M0 32-bit based architecture core  On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

SMD-B 053

Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
Contextual Info: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:

Multilayer Ceramic Dipped Axial and Radial Capacitors

Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package

RQA0009

Abstract: 17-33 0952
Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

RQA0011

Abstract: RQA0011DNS Ga FET marking k
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

Contextual Info: CGB 241 Preliminary Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency (up to

ims pcb

Contextual Info: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

Contextual Info: CGB 241 Preliminary Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency (up to

R07DS0095EJ0800

Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

RQA0011

Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

Contextual Info: LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @28 V = 45 W with 16 dB gain @ 1600 MHz • BeO free package