22 NF, 63 Search Results

LCR polypropylene Capacitors

Abstract: LCR Capacitors 2000v mkc 55 PRECISION cAPACITORS polystyrene capacitors LCR polypropylene Capacitors dc 55-085-56 630V FSC 160V
Contextual Info: Precision Capacitors LCR TYPE FPC FSC FSC/EX FPC/EX MKC/R MKC/PC RATED DC VOLTAGE AC 160 - 630 VDC 30 - 630 VDC 63 - 630 VDC 63 - 630 VDC 63 - 400 VDC 63 - 400 VDC CAPACITANCE RANGE 1 - 150 nF 25 pF - 200 nF 47 pF - 100 nF 47 pF - 100 nF 0.01 - 22 µF 0.01 - 22 µF

HSG1001

Abstract: IC str 1229
Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: Mini-Circuits - Specification for Amplifier - VNA-22 Amplifier print this page VNA-22 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz NF dB Typ. IP3 dBm Typ. 500-2500 11.80 +17.00 +10.00 6.70 Lw=low range fL to fU/2 U=upper range(fU/2 to fU)

940-025

Contextual Info: Sav-Con connector savers Series 22 Geo-Marine connectors 940-025 Scoop-Proof High-Pressure Connector How To Order Sample Part Number 940 Series No. 940 Basic No. -025 Finish Symbol B, J, M, N, NF, T, Z1 See Table I Shell Size 10, 12, 14, 16, 18, 20, 22, 24

Contextual Info: N. BNC. TNC SERIES 2 WATTS 22 If 8 _L N MALE BNC MALE N FEMALE TNC MALE < A . - . CFT-2 NF MECHANICAL SPECIFICATIONS Connector Contact Housing Insulator aa ELECTRICAL SPECIFICATIONS Brass, Nickel Plated. Brass, Gold Plated. Brass, Nickel Plated.

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

CECC 22111

Contextual Info: Standards Approvals SUHNER SMA connectors conform to International: IEC 169-15 Europe: CECC22110 USA: MIL-C-39012, SMA Interface MIL-STD-348a/310 GB: BS 9210 N 0006 F: NF-C-93563 KMR SUHNER SMA connectors are approved in accor dance with CECC 22 11 0 and are mentioned ir

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

ua 722 fc

Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

vg 96912 16-8

Abstract: 941L vg 96912
Contextual Info: Sav-Con Connector Savers Sav-Con® Connector Savers LN 29729 SJT 94 1 L 001 NF 28 G 22 P X Series No. Class 1 = Environmental 2 = Hi Rel L = Lock Ring (Optional) - = Standard Basic Part No. Finish Symbol (See Page 6) Alternate Position W, X, Y, Z (Omit for Normal)

Contextual Info: N. BNC. TNC SERIES 2 WATTS Microwave Terminations 22 N MALE BNC MALE T B CFT-2 NM CFT-2 BM N FEMALE TNC MALE IN MM 0.60 15.24 0.65 16.51 0.75 19.05 0.80 20.32 1.35 34.29 1.50 38.10 1.60 40.64 rn CFT-2 NF CFT-2 TM MECHANICAL SPECIFICATIONS Connector Contact

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

TSE 151

Abstract: BB502C SC-82AB Hitachi DSA00310
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

940-025

Contextual Info: Geo-Marine Custom Applications 940-025 High-Pressure Environmental Sav-Con® Connector Saver Scoop-Proof How To Order Sample Part Number 940 -025 M 16 -26 Series No. 940 Basic No. -025 Finish Symbol B, J, M, N, NF, T, Z1 See Table II Shell Size 10, 12, 14, 16, 18, 20, 22, 24

BB502M

Abstract: Hitachi DSA00398
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

TSE 151

Abstract: BB502C DSA003644
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB502M

Abstract: DSA003644
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

marking r4 SOT343

Abstract: BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

marking r4 SOT343

Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz