22 NF, 63 Search Results

HSG1001

Abstract: IC str 1229
Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

Contextual Info: Mini-Circuits - Specification for Amplifier - VNA-22 Amplifier print this page VNA-22 Frequency GAIN, dB Maximum Power, dBm Dynamic Range VSWR MHz NF dB Typ. IP3 dBm Typ. 500-2500 11.80 +17.00 +10.00 6.70 Lw=low range fL to fU/2 U=upper range(fU/2 to fU)

940-025

Contextual Info: Sav-Con connector savers Series 22 Geo-Marine connectors 940-025 Scoop-Proof High-Pressure Connector How To Order Sample Part Number 940 Series No. 940 Basic No. -025 Finish Symbol B, J, M, N, NF, T, Z1 See Table I Shell Size 10, 12, 14, 16, 18, 20, 22, 24

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

TSE 151

Abstract: BB502C DSA003644
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB502M

Abstract: DSA003644
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

marking r4 SOT343

Abstract: BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

marking r4 SOT343

Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – December 12, 2013 V.12 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 2.2 µF Product Specification – April 21, 2014 V.13 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

CGA Series Automotive Grade Mid Voltage (100 to 630V)

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series Automotive Grade Mid Voltage 100 to 630V Type: CGA2 [EIA CC0402] CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA8 [EIA CC1812] CGA9 [EIA CC2220] Issue date: April 2013 002-01 / 20130329 / mlcc_automotive_midvoltage_en

C3216X7R2J472M115AA

Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog

Contextual Info: BN Film Capacitors Radial Leaded BN-RoHS 7.5mm to 27.5mm BN Series Dielectric: Polyester film Stacked-film for pitch 7.5, 10 & 15mm (63Vdc.400Vdc) Wound capacitor for pitch 7.5 & 10 & 15mm (630Vdc/1000Vdc) for pitch 22.5 & 27.5mm (63Vdc/1000Vdc) Leads: Radial tinned copper wire

Yageo Ceramic multilayer NPO

Abstract: phycomp capacitors NPO phycomp capacitors X7R yageo Phycomp NPO capacitor 0603CG
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – February 02, 2012 V.9 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

CGA Series Automotive Grade Mid Voltage (100 to 630V)

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGA Series Automotive Grade Mid Voltage 100 to 630V Type: CGA2 [EIA CC0402] CGA3 [EIA CC0603] CGA4 [EIA CC0805] CGA5 [EIA CC1206] CGA6 [EIA CC1210] CGA8 [EIA CC1812] CGA9 [EIA CC2220] Issue date: Oct 2013 004-01 / 20130930 / mlcc_automotive_midvoltage_en

CGJ Series High Reliability Grade Mid Voltage (100 to 630V)

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGJ Series High Reliability Grade Mid Voltage 100 to 630V Type: CGJ3 [EIA CC0603] CGJ4 [EIA CC0805] CGJ5 [EIA CC1206] CGJ6 [EIA CC1210] Issue date: Oct 2013 004-01 / 20130929 / mlcc_highreliability_midvoltage_en MULTILAYER CERAMIC CHIP CAPACITORS

cgj6

Abstract: CGJ4J2X7R2A473K125AA CGJ3E3C0G2D151J080AA
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGJ Series High Reliability Capacitors Mid Voltage 100 to 630V Type: Issue date: CGJ3 [EIA CC0603] CGJ4 [EIA CC0805] CGJ5 [EIA CC1206] CGJ6 [EIA CC1210] January 2013 TDK MLCC Global Catalog Version A13 REMINDERS Please read before using this product

X7R 1206 100V 5 100NF

Abstract: Yageo Ceramic multilayer NPO
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – April 24, 2013 V.11 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage