22 NF, 63 Search Results

HSG1001

Abstract: IC str 1229
Contextual Info: HSG1001 SiGeHBT High Frequency Low Noise Amplifier REJ03G0195-0100Z Rev.1.00 Apr.08.2004 Features • High power gain and low noise figure ; • MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

TSE 151

Abstract: BB502C DSA003644
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB502M

Abstract: DSA003644
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – December 12, 2013 V.12 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

Yageo Ceramic multilayer NPO

Abstract: phycomp capacitors NPO phycomp capacitors X7R yageo Phycomp NPO capacitor 0603CG
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – February 02, 2012 V.9 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

cgj6

Abstract: CGJ4J2X7R2A473K125AA CGJ3E3C0G2D151J080AA
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS CGJ Series High Reliability Capacitors Mid Voltage 100 to 630V Type: Issue date: CGJ3 [EIA CC0603] CGJ4 [EIA CC0805] CGJ5 [EIA CC1206] CGJ6 [EIA CC1210] January 2013 TDK MLCC Global Catalog Version A13 REMINDERS Please read before using this product

C3153 M

Abstract: C3474 B32520 C3332 c475 epcos B32529b C168 B32521 C1102 B32522C
Contextual Info: Metallized Polyester Film Capacitors MKT and MFT B 32 520 Plastic Case … B 32 529 Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) ■ Stacked-film technology for lead spacing 5 and 7,5 mm as well as for 10 and 15 mm (63 … 400 Vdc)

MKCS_63

Abstract: Precision MKCS 63
Contextual Info: MKCS/8.11.2006 Metallized Polyphenilene Sulfide PPS Precision Capacitors MKCS 63 series (Replaces MKC 63) Typical Applications Process control measurement Communication equipment Main Characteristics Self-healing Suitable for use up to 125°C Printed circuit board mounting

MGA653

Abstract: QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8
Contextual Info: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

MGA-633P8

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-636P8 High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-636P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 mm GaAs

MGA-634P8-BLKG

Abstract: mga633p8 MCR01MZS
Contextual Info: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

MRF951

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz

Contextual Info: Page 10 CAPACITORS POLYESTER Type KT . d Applications AC or DC voltages High Impulse High Current Protection / excellent du/dt Coupling / decoupling, audio Characteristics Dry plastic film technology Nominal Voltage: 63 VDC to 1000 VDC Climatic Category: 55/100/21

Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

capacitor MKT Philips

Abstract: Philips film capacitors PHILIPS MKT CAPACITOR capacitor 400 MKT philips capacitor 250 mkt philips 41223
Contextual Info: Film Capacitors General purpose, epoxy dipped, miniature & i£ W ü s « MKT 465 StìttBS ! . f MKT 467 U Ktm A pplications MKT 468 blocking, coupling and bypass capacitor }Q0 250 m m 250 40Û 100 250 m m 630 m 25Û 630 ICQ pF . r s s p iF .

MRF914

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz

MAS9122

Abstract: MAS9122ASM2-T MAS9122ASM3-T MAS9122ASM4-T MO-187
Contextual Info: DA9122.002 7 September, 2001 MAS9122 3 Outputs LDO Voltage Regulator IC • Three Low Dropout Voltage Regulators • Very Low Noise: 25 µVrms • High Ripple Rejection: 63 dB • Very Low Crosstalk • Low Ground Pin Current • Regulator Enable/Disable Control

NTC 100

Abstract: AU6362 CM600DXL-24S
Contextual Info: CM600DXL-24S Dual IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 600 Amperes/1200 Volts B G J D K K L AM AT AU A C E F AM AM AU AV AH AU L AE Y AJ AL 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41