21TT Search Results
21TT Price and Stock
Samtec Inc HTSW-142-21-T-T |
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Samtec Inc HTSW-225-21-T-T-RA-100 |
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HTSW-225-21-T-T-RA-100 |
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Samtec Inc HSS-121-TT-2-N |
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Samtec Inc HSS-121-TT-21B-N |
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Samtec Inc MTSW-104-21-T-T-270.100 Variable Post Height Terminal Strip |
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MTSW-104-21-T-T-270 |
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MTSW-104-21-T-T-270 | Bulk | 1 |
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21TT Datasheets Context Search
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Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab18-jul-08 | |
21TT100Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab18-jul-08 | |
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Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab11-mar-11 | |
21tt100Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab2011/65/eu2002/95/ec+1 | |
21ttContextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab12-mar-0721tt | |
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Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 3 Anode 1 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab12-mar-07 | |
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Contextual Info: 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A FEATURES Cathode to base 2 TO-220AB Anode 1 Anode 3 • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency |
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21tt100o-220ab11-mar-11 | |
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Contextual Info: C3 WMD4M4-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM advan ced* FEATURES • Fast Access Tim e tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5 V ± 0 .5 V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh |
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
vdo A 00 0406
Abstract: 62256 ADC12038C1N HA 12038 ANA 618 CD 4093 PIN DIAGRAM ADC12030 ADC12032 ADC12038 ADC12H032
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12h030/adc12h032/adc12h034/adc12h03812030/adc12032/adc12034/adc+13 | |
vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
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vmn-sg2178-1111vishay 1n4007 do-214acvs-30bq060pbf40mt160kpbf+7 | |
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Contextual Info: C3 WMDE4M4-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM advan ced* FEATURES • Fast Access Tim e îr a c : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5 V ± 0 .5 V ■ RAS-Only Refresh Packaging: ■ CAS Before RAS Refresh |
OCR Scan |
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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sx3704ap239transistor 801398c547+6 | |
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vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
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vmn-sg2125-1009vishay 1n4007 do-214ac7 segment common cathodembr360 smd+7 | |
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Contextual Info: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The |
OCR Scan |
hb56sw872es-6/7608-word72-bitade-203-765a+6 | |
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Contextual Info: C3 WMD4M4V-XXX M/HITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM 3.3V ADVANCED* FEATURES • Fast Access Time tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Power Supply: 3.3V ±0.3V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh |
OCR Scan |
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