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    21T1A Search Results

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    21T1A Price and Stock

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    Samtec Inc SD-121-T-1A

    .100" DOUBLE ROW SCREW MACHINE S
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    DigiKey SD-121-T-1A Tube 10
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    Avnet Americas SD-121-T-1A Tube 1
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    Mouser Electronics SD-121-T-1A
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    Newark SD-121-T-1A Bulk 1
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    Master Electronics SD-121-T-1A
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    Sager SD-121-T-1A 1
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    Samtec Inc SS-121-T-1A

    SOCKET STRIPS
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    DigiKey SS-121-T-1A Bulk 1
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    Avnet Americas SS-121-T-1A Bulk 1
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    Mouser Electronics SS-121-T-1A
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    Newark SS-121-T-1A Bulk 1
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    Master Electronics SS-121-T-1A
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    Sager SS-121-T-1A 1
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    RS Pro 26090003 (2141000621 (T1 ADAPTER))

    QUICK CONNECT ADAPTER 0.250" SOCKET TO 0.187" PLUG (F2/T2 TO F1/T1 ADAPTER)
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    RS 26090003 (2141000621 (T1 ADAPTER)) Bulk 10 Weeks 1
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    Samtec Inc SS-121-T-1A-N

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    Master Electronics SS-121-T-1A-N
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    Samtec Inc HSS-121-T-1A-N

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    Master Electronics HSS-121-T-1A-N
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    21T1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm 0.8±0.05 1.5 V 駆動です オン抵抗が低い Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J46CTB PDF

    Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J46CTB PDF

    Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J46CTB PDF

    21T1A

    Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J46CTB 21T1A PDF

    Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS VI SSM3J46CTB Power Management Switch Applications Unit: mm • • 1.5 V drive Low ON-resistance:RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V)


    Original     		SSM3J46CTB PDF

    Contextual Info: SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J46CTB ○ Power Management Switch Applications 0.8±0.05 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V)


    Original     		SSM3J46CTB PDF

    SSM3J46CTB

    Contextual Info: SSM3J46CTB 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J46CTB ○ パワーマネージメントスイッチ 単位: mm • • 1.5 V 駆動です オン抵抗が低い RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V)


    Original     		SSM3J46CTB SSM3J46CTB PDF