21NM Search Results

Contextual Info: STP/21NM60ND-21NM60ND 21NM60ND-21NM60ND N-channel 600V - 0.17Ω - 17A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJmax 21NM60ND 21NM60ND 21NM60ND 21NM60ND 21NM60ND

QQ-S-G98

Contextual Info: 4 3 2 1 DI37 OTYT>I«T 19 AR BY M> INCORPORATED. R E V IS IO N S 34 - BRBnpn -OBSOLETED -5 PER EC 0020-311-94 0 3 /0 9 /9 5 LG DK C O N N E C T O R DE S I G N E D FOR 28 AND 26 A W G ST R A N D E D AND SOLID C O N D U C T O R R I B B O N CABLE ON .050 fc.

21nm60n

Abstract: ZVS phase-shift converters
Contextual Info: 21NM60ND, 21NM60ND, 21NM60ND, 21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features TAB Order codes VDSS @ TJmax RDS on max ID 21NM60ND

MIL-P-31728

Contextual Info: 4 3 1 2 DI37 AR BY M> INCORPORATED. OTYT>I«T 19 R E V IS IO N S 34 - BRBnpn - OBSOLETED -5 PER EC 0020-311-94 03/09/95 LG DK C O N N E C T O R DE S I G N E D FOR 28 AND 26 A W G ST R A N D E D AND SOLID C O N D U C T O R R I B B O N CABLE ON .050 fc.

K4X2G323PD8GD8

Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Contextual Info: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from

L214

Abstract: GLED52 21nm
Contextual Info: Technical Data Sheet RGB Color Sensor SMD Device Preliminary CLS9032C/L214/TR8 Features ․Package in 12mm tape on 7〞diameter reel. ․Surface-mount plastic package. ․Good stable output with temperature shift ․External dimensions 7.0 L *5.0(W)*1.0(H)mm3.

21nm60n

Abstract: F21NM60 f21nm60n 21nm60 21nm60nd 21nm6 STB21NM60ND STF21NM60ND STI21NM60ND STP21NM60ND
Contextual Info: STP/21NM60ND-21NM60ND 21NM60ND-21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω

21nm60n

Abstract: STB21NM60ND STW21NM60ND
Contextual Info: 21NM60ND, 21NM60ND, 21NM60ND, 21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB 3 Order codes VDSS @ TJmax RDS on max ID 21NM60ND

21nm60n

Abstract: 21nm60 21nm60nd f21nm60n st marking STP MOSFET MARKING STP JESD97 STB21NM60ND STF21NM60ND STI21NM60ND
Contextual Info: STP/21NM60ND-21NM60ND 21NM60ND-21NM60ND N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJmax RDS on max 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω

samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Contextual Info: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks